IP Library Granted Patent US 11,043,668
Granted Patent B2
US 11,043,668 · App. 15/471,355 · Granted Jun 22, 2021

Silicon oxide composite for lithium secondary battery negative electrode material and method for manufacturing the same

Inventors: Seung Min Oh (Siheung-si, KR); Jang Han Kim (Siheung-si, KR); Daeun Kim (Siheung-si, KR)
Assignee: Daejoo Electronic Material Co., Ltd.
H01M4/366H01M4/0428H01M4/1391H01M4/1395H01M4/364H01M4/386H01M4/483H01M4/485H01M4/625H01M10/0525H01M2004/027
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Quick Facts
Patent No.
US 11,043,668
App. No.
15/471,355
Granted
Jun 22, 2021
Kind
B2
Abstract

A silicon oxide composite for a secondary battery negative electrode material and a method for manufacturing the same, more particularly, a silicon oxide composite for a secondary battery negative electrode material and a method for manufacturing the same are disclosed. The silicon oxide composite includes MgSiO 3 (enstatite) crystals and silicon particles, of which crystal size is from 1 to 25 nm, in a silicon oxide (SiOx, 0<x<2), and a carbon film placed on a surface.

Claims (18)

1. A silicon oxide composite for a secondary battery negative electrode material, the silicon oxide composite comprising:

(a) a silicon oxide (SiOx, 0<x<2), and

(b) a carbon film on a surface of the silicon oxide,

in which (a) the silicon oxide (SiOx, 0<x<2) includes;

(i) an MgSiO 3 (enstatite) crystal; and

(ii) a silicon particle with a crystal size of from 1 to 25 nm; and

wherein the MgSiO 3 (enstatite) crystals and silicon particles are uniformly mixed inside the silicon oxide (SiOx, 0<x<2), and

wherein the silicon oxide does not include Mg 2 SiO 4 (forsterite) crystal, or when Mg 2 SiO 4 (forsterite) crystal is futher included, the content of the Mg 2 SiO 4 (forsterite) crystal is smaller than the content of the MgSiO 3 (enstatite) crystal.

2. The silicon oxide composite of claim 1 , wherein in X-ray diffraction pattern analysis, a peak belonging to a Si crystal appears in a range of a diffraction angle 28°<20<29°, and wherein a peak belonging to a MgSiO 3 crystal appears in a range of a diffraction angle 30.5°<20<31.5°.

3. The silicon oxide composite of claim 1 , wherein Mg weight per part by the total silicon oxide composite 100 weight is contained in a ratio of 2 to 20 in part by weight.

4. The silicon oxide composite of claim 1 , wherein carbon per part by the total silicon oxide composite 100 weight is contained in a ratio of 1 to 20 in part by weight.

5. The silicon oxide composite of claim 1 , wherein an average thickness of the carbon film is from 5 to 100 nm.

6. The silicon oxide composite of claim 1 , wherein the carbon film includes one or more selected from a group of a carbon nanofiber, a graphene, a graphene oxide, and a reduced graphene oxide.

7. The silicon oxide composite of claim 1 , wherein specific gravity of the silicon oxide composite is from 2.3 to 3.2.

8. The silicon oxide composite of claim 1 , wherein an average particle diameter of the silicon oxide composite is from 0.1 to 15 μm.

9. The silicon oxide composite of claim 1 , wherein a specific surface area of the silicon oxide composite is from 1 to 40 m 2 /g.

10. A lithium secondary battery negative electrode comprising a silicon oxide composite for a secondary battery negative electrode material of claim 1 .

11. A lithium secondary battery comprising a lithium secondary battery negative electrode including a silicon oxide composite for a secondary battery negative electrode material of claim 10 .

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 28, 2017
From: OH, SEUNG MIN; KIM, JANG HAN; KIM, DAEUN
To: DAEJOO ELECTRONIC MATERIAL CO., LTD.
Reel/Frame 042107/0531 →
Priority Claims (1)
KR 10-2017-0034857 · Mar 20, 2017 · national
Continuity (1)
Related Publication 20180269475A1 · Sep 20, 2018