Semiconductor chip and electronic apparatus for suppressing degradation of semiconductor chip
Provided is a semiconductor chip and an electronic apparatus that can suppress degradation of optical characteristics of a semiconductor chip including an image pickup device. The semiconductor chip includes an image pickup device, a transparent protective member that protects the image pickup device, an IR cut film arranged between a light-receiving surface of the image pickup device and the protective member, a bonding layer that bonds the IR cut film and the protective member together, and a protective film that covers side surfaces of the IR cut film and the bonding layer.
1. A semiconductor chip, comprising:
an image pickup device;
a transparent protective member that protects the image pickup device;
an infrared (IR) cut film between a light-receiving surface of the image pickup device and the transparent protective member, wherein an edge of the IR cut film is coincident with an outer edge of the image pickup device;
a bonding layer that bonds the IR cut film with the transparent protective member;
a protective film that covers a side surface of the IR cut film, a side surface of the bonding layer, and at least a portion of a side surface of the image pickup device, wherein the protective film is different from the bonding layer; and
a metal solder on a specific surface of the semiconductor chip, wherein melting point of the metal solder is less than or equal to 150° C.
2. The semiconductor chip according to claim 1 , further comprises an adhesive type IR cut film having adhesiveness, wherein the adhesive type IR cut film bonds the image pickup device with the transparent protective member.
3. The semiconductor chip according to claim 1 , wherein
the IR cut film comprises a plurality of films, and
each film of the plurality of films is associated with a different light-shielding wavelength band.
4. The semiconductor chip according to claim 1 , wherein the specific surface is opposite to the light-receiving surface.
5. The semiconductor chip according to claim 1 , wherein
a reflective type IR cut film is on at least one surface of the transparent protective member.
6. The semiconductor chip according to claim 1 , wherein
the IR cut film is a coating type IR cut filter.
7. The semiconductor chip according to claim 1 , wherein a material of the protective film is different from a material of the bonding layer.
8. The semiconductor chip according to claim 7 , wherein
the material of the bonding layer is a transparent sealing resin, and
the material of the protective film is one of Silicon Nitride (SiN), Silicon Oxynitride (SiON), Aluminium, or Titanium.
9. The semiconductor chip according to claim 1 , wherein a material of the metal solder is one of SnBi, SnBiAg, SnIn, or In.
10. An electronic apparatus, comprising:
a semiconductor chip including:
an image pickup device;
a transparent protective member that protects the image pickup device;
an infrared (IR) cut film between a light-receiving surface of the image pickup device and the transparent protective member, wherein an edge of the IR cut film is coincident with an outer edge of the image pickup device;
a bonding layer that bonds the IR cut film with the transparent protective member; and
a protective film that covers a side surface of the IR cut film, a side surface of the bonding layer, and at least a portion of a side surface of the image pickup device, wherein the protective film is different from the bonding layer;
a metal solder on a specific surface of the semiconductor chip, wherein melting point of the metal solder is less than or equal to 150° C.; and
a signal processing circuit configured to process a signal from the image pickup device.
11. A semiconductor chip, comprising:
an image pickup device;
a transparent protective member that protects the image pickup device, wherein the transparent protective member includes:
a first member that includes a planar groove inside the first member,
a second member that seals the planar groove,
a first bonding layer that bonds an infrared (IR) cut film with the second member, and
the IR cut film that is inside the transparent protective member; and
a second bonding layer that bonds the first member with the image pickup device, wherein the second bonding layer is different from the first bonding layer.
12. The semiconductor chip according to claim 11 , wherein
the IR cut film is inside the planar groove.
13. An electronic apparatus, comprising:
a semiconductor chip including:
an image pickup device;
a transparent protective member that protects the image pickup device, wherein the transparent protective member includes:
a first member that includes a planar groove inside the first member,
a second member that seals the planar groove,
a first bonding layer that bonds an infrared (IR) cut film with the second member, and
the IR cut film that is inside the transparent protective member; and
a second bonding layer that bonds the first member with the image pickup device, wherein the second bonding layer is different from the first bonding layer; and
a signal processing circuit configured to process a signal from the image pickup device.