Component for use in a patterning device environment
A component for use in a patterning device environment including a patterning device, wherein the component is treated to suppress EUV plasma-induced contaminant release and/or atomic hydrogen or other radicals induced defectivity. A conduit array comprising at least one conduit, wherein the at least one conduit has been treated to promote adhesion of a contaminant to the at least one conduit.
1. A component disposed in a patterning device environment including a patterning device,
wherein the component is treated to suppress EUV plasma-induced contaminant release or atomic hydrogen or other radicals induced defectivity,
wherein the patterning device environment receives a radiation beam from an illumination system of a lithographic apparatus and transmits a patterned radiation beam to a projection system of the lithographic apparatus,
wherein the component is disposed in a reticle mini environment within the patterning device environment, and
wherein the component is a patterning device support, a clamp, a fiducial, an encoder, a patterning device masking apparatus, a patterning device masking apparatus motion/control module, a radiation beam uniformity adjustment apparatus, a patterning device exchange apparatus, a patterning device actuator, a gas exhaust system, a contaminant seal configured to isolate a volume for the patterning device from a relative vacuum or low-pressure environment, or a housing of the relative vacuum or low-pressure environment.
2. The component of claim 1 , wherein the component comprises a coating, the coating comprising a conductive coating and/or a recombination coating having a recombination coefficient of at least 0.1.
3. The component of claim 2 , wherein the conductive coating comprises a metal, metal alloy, noble metal, noble metal alloy, Ru, Rh, Pd, Pt, a conductive ceramic based on metal nitride, boride, carbide, oxide, or a mix of ceramics, CrN, TiN, ZrN, ZrB, TaB, TiO, CrO 2 , MnO 2 , MoO 2 , TcO 2 , RuO 2 , RhO 2 , WO 2 , ReO 2 , IrO 2 , Mo 4 O 11 , or ReO 3 .
4. The component of claim 2 , wherein the recombination coating has a recombination coefficient of at least 0.1 for atomic hydrogen.
5. The component of claim 4 , wherein the coating comprises a recombination coefficient of at least 0.1 for atomic hydrogen and comprises a noble metal or a noble metal alloy.
6. The component of claim 2 , wherein the component is metallic or has an additional conductive coating upon which the coating is located.
7. The component of claim 1 , wherein the component comprises a dielectric.
8. The component of claim 7 , wherein the component comprises an inter-diffusion layer between a conductive coating and the dielectric.
9. The component of claim 1 , wherein a surface of the component has been treated to provide projections to increase the effective surface area.
10. The component of claim 9 , wherein the pitch (γ) of the projections to the amplitude (A) of the projections is γ/A<0.3.
11. A lithographic apparatus comprising:
an illumination system configured to provide a radiation beam;
a projection system configured to receive a patterned radiation beam and project the patterned radiation beam onto a substrate;
a patterning device environment configured to receive the radiation beam and transmit the patterned radiation beam;
a patterning device disposed in the patterning device environment and configured to interact with the radiation beam and generate the patterned radiation beam; and
a component disposed in a reticle mini environment within the patterning device environment,
wherein the component is treated to suppress EUV plasma-induced contaminant release or atomic hydrogen or other radicals induced defectivity, and
wherein the component is a patterning device support, a clamp, a fiducial, an encoder, a patterning device masking apparatus, a patterning device masking apparatus motion/control module, a radiation beam uniformity adjustment apparatus, a patterning device exchange apparatus, a patterning device actuator, a gas exhaust system, a contaminant seal configured to isolate a volume for the patterning device from a relative vacuum or low-pressure environment, or a housing of the relative vacuum or low-pressure environment.
12. The lithographic apparatus of claim 11 , further comprising an electrical connector configured to add a voltage bias to a conductive coating provided on at least one dielectric surface of the component.
13. The lithographic apparatus of claim 12 , wherein the voltage bias is limited to no more than 10 V and the current is limited to no more than 100 mA.