Silicon carbide power devices
An embodiment relates to a device comprising a unit cell on a SiC substrate, the unit cell comprising a gate insulator film, a trench in the well region, and a first sinker region of a second conduction type, wherein the first sinker region has a depth that is equal to or greater than a depth of a well region; wherein the device has an on-resistance of less than 3 milliohm-cm 2 , a gate threshold voltage of greater than 2.8V, a breakdown voltage of greater than 1450V, and an electric field of less than 3.5 megavolt/cm in the gate insulator film at a drain voltage of less than or equal to 1200 V.
1. A device comprising a unit cell on a SiC substrate, the unit cell comprising:
a gate insulator film,
a trench in a well region,
a first sinker region having a second conduction type, wherein the first sinker region has a depth that is equal to or greater than a depth of the well region, and
a second sinker region having the second conduction type;
wherein each of the first sinker region and the second sinker region is in contact with a region having a first conduction type to form a p-n junction.
2. The device of claim 1 , wherein the device comprises a semiconductor metal-insulator-semiconductor transistor component.
3. The device of claim 1 , wherein the well region is next to an insulator-semiconductor interface; and a source region of the first conduction type formed within the well region.
4. The device of claim 3 , wherein a depth of the trench is greater than or equal to a thickness of the source region.
5. The device of claim 1 , wherein the first sinker region is located below the trench.
6. The device of claim 1 , wherein a depth of the second sinker region is less than a depth of the first sinker region.
7. The device of claim 1 , wherein a depth of the second sinker region is greater than a depth of the well region.
8. The device of claim 1 , wherein the device has an on-resistance of less than 4 milliohm centimeter squared, a gate threshold voltage of greater than 1.5 Volt, a breakdown voltage of greater than 500 Volt, and an electric field of less than 3.5 megavolt per cm in the gate insulator film.
9. A device comprising a unit cell on a SiC substrate, the unit cell comprising:
a gate insulator film,
a trench in a well region,
a first sinker region of a second conduction type,
a second sinker region of the second conduction type, and
a source region;
wherein the source region is in direct contact with the second sinker region.
10. The device of claim 9 , wherein the device comprises a semiconductor metal-insulator-transistor component.
11. The device of claim 9 , wherein the unit cell further comprises a semiconductor body of a first conduction type that comprises a drift zone; the well region of the second conduction type next to an insulator-semiconductor interface; and a source region of the first conduction type formed within the well region.
12. The device of claim 11 , wherein a depth of the trench is greater than or equal to a thickness of the source region.
13. The device of claim 9 , wherein a depth of the trench is greater than a depth of the source region.
14. The device of claim 9 , wherein the device has an avalanche energy of greater than 10 Joule per centimeter squared, calculated by dividing an avalanche energy in Joules by a total die area in centimeter squared.
15. The device of claim 9 , wherein an avalanche failure is located within the unit cell.
16. A device comprising a unit cell on a SiC substrate, the unit cell comprising:
a gate insulator film,
a trench in a well region,
a first sinker region of a second conduction type,
a second sinker region of the second conduction type, and
a source region;
wherein the first sinker region has a depth that is greater than a depth of the second sinker region;
wherein the second sinker has a width that is greater than that of the first sinker.
17. The device of claim 16 , wherein the first sinker region is located below the trench.
18. The device of claim 16 , wherein a depth of the second sinker region is less than a depth of the first sinker region.
19. The device of claim 16 , wherein a depth of the second sinker region is greater than a depth of the well region.