Semiconductor device and alternator using the same
A semiconductor device includes a first external electrode with a first electrode surface portion; a second external electrode with a second electrode surface portion; a MOSFET chip with a built-in Zener diode which includes an active region and a peripheral region; a control IC chip which drives the MOSFET chip based on voltage or current between a drain electrode and a source electrode of the MOSFET chip; and a capacitor which supplies power to the MOSFET chip and the control IC chip. The first electrode surface portion is connected to either the drain electrode or the source, the second electrode surface portion is connected to either the source electrode or the drain electrode, a plurality of unit cells of the MOSFET with the built-in Zener diode are provided in the active region, and the breakdown voltage of the Zener diode is set to be lower than that of the peripheral region.
1. A semiconductor device, comprising:
a first external electrode which includes a first electrode surface portion;
a second external electrode which includes a second electrode surface portion;
a MOSFET chip with a built-in Zener diode which includes an active region in which a circuit current flows and a peripheral region holding a breakdown voltage at a peripheral portion;
a control IC chip which drives a gate of the MOSFET chip with the built-in Zener diode based on a voltage or a current between a drain electrode and a source electrode of the MOSFET chip with the built-in Zener diode; and
a capacitor which supplies power to the MOSFET chip with the built-in Zener diode and the control IC chip,
wherein the first electrode surface portion is connected to either of the drain electrode or the source electrode of the MOSFET chip with the built-in Zener diode,
the second electrode surface portion is connected to either of the source electrode or the drain electrode of the MOSFET chip with the built-in Zener diode,
a plurality of unit cells are provided in the active region of the MOSFET chip with the built-in Zener diode, and
a breakdown voltage of the Zener diode included in the unit cell is set to be lower than the breakdown voltage of the peripheral region,
the MOSFET chip with the built-in Zener diode includes:
a first conductivity type first semiconductor layer which is formed on a main surface of semiconductor;
a first conductivity type second semiconductor layer which is formed on the first semiconductor layer and has an impurity concentration lower than an impurity concentration of the first semiconductor layer;
a second conductivity type third semiconductor layer which is formed on the second semiconductor layer;
a first trench portion which penetrates through the third semiconductor layer from the main surface opposite to the first semiconductor layer and reaches the second semiconductor layer;
a first conductivity type fourth semiconductor layer which is formed on the third semiconductor layer and reaches a main surface opposite to the first semiconductor layer; and
a second trench portion which penetrates through the fourth semiconductor layer from the main surface opposite to the first semiconductor layer and reaches the third semiconductor layer,
the Zener diode being formed on a bonding portion between the second semiconductor layer and the third semiconductor layer,
a first semiconductor type fifth semiconductor layer is provided in the second semiconductor layer in the vicinity of a central part of a bonding portion between the second semiconductor layer and the third semiconductor layer, and
a second conductivity type sixth semiconductor layer is provided in the third semiconductor layer in the vicinity of the central part of the bonding portion between the second semiconductor layer and the third semiconductor laver.
2. The semiconductor device according to claim 1 , wherein
an area of the active region of the MOSFET chip with the built-in Zener diode is A,
energy generated by the Zener diode in a unit time at a time of a load dump is J,
thermal conductivity of the MOSFET chip with the built-in Zener diode in a mounted state is λ,
a distance from the Zener diode to a bonding material which bonds the MOSFET chip with the built-in Zener diode and the first electrode surface portion or bonds the MOSFET chip with the built-in Zener diode and the second electrode surface portion is L,
a melting point of the bonding material is Tm,
an ambient temperature is Ta, and
a radius of a circular pedestal configured by the first electrode surface portion is r, and the following relation Equation is satisfied
2
r
2
>
A
>
L
λ
×
J
(
Tm
-
Ta
)
.
(
4
)
3. The semiconductor device according to claim 1 , wherein a breakdown voltage of the Zener diode is set to be lower than the breakdown voltage of the peripheral region even when the load dump occurs and a temperature of the Zener diode rises due to surge energy.
4. The semiconductor device according to claim 3 , wherein
an area of the active region of the MOSFET chip with the built-in Zener diode is A,
energy generated by the Zener diode in a unit time at a time of a load dump is J,
thermal conductivity of the MOSFET chip with the built-in Zener diode in a mounted state is λ,
a distance from the Zener diode to a bonding material which bonds the MOSFET chip with the built-in Zener diode and the first electrode surface portion or bonds the MOSFET chip with the built-in Zener diode and the second electrode surface portion is L,
a melting point of the bonding material is Tm,
an ambient temperature is Ta, and
a radius of a circular pedestal configured by the first electrode surface portion is r, and the following relation Equation is satisfied
2
r
2
>
A
>
L
λ
×
J
(
Tm
-
Ta
)
.
(
4
)
5. The semiconductor device according to claim 1 , wherein
a shape of the MOSFET chip with the built-in Zener diode is rectangular, and the control IC chip and the capacitor are arranged in a long side direction of the rectangle.
6. The semiconductor device according to claim 1 , wherein
an impurity concentration of the fifth semiconductor layer is higher than an impurity concentration of the second semiconductor layer, and
an impurity concentration of the sixth semiconductor layer is higher than an impurity concentration of the third semiconductor layer.
7. The semiconductor device according to claim 1 , wherein
a bonding material which bonds the MOSFET chip with the built-in Zener diode and the first electrode surface portion or the second electrode surface portion is bonded using sintered bonding.
8. The semiconductor device of claim 1 , further comprising:
an electronic circuit body,
wherein the electronic circuit body is provided between the first electrode surface portion and the second electrode surface portion,
the first electrode surface portion is connected to a first surface of the electronic circuit body, and
the second electrode surface portion is connected to a second surface of the electronic circuit body,
the electronic circuit body includes:
a drain frame which is connected to the drain electrode of the MOSFET chip with the built-in Zener diode, and
a source frame which is connected to the source electrode of the MOSFET chip with the built-in Zener diode,
the first electrode surface portion is connected to one of the drain frame and the source frame, and
the second electrode surface portion is connected to another of the drain frame and the source frame.
9. The semiconductor device according to claim 8 , wherein
an area of an active area of the MOSFET chip with the built-in Zener diode is A,
energy generated by the Zener diode in a unit time at a time of the load dump is J,
thermal conductivity of the MOSFET chip with the built-in Zener diode in a mounted state is λ,
a distance from the Zener diode to a bonding material which bonds the MOSFET chip with the built-in Zener diode and the first electrode surface portion or bonds the MOSFET chip with the built-in Zener diode and the second electrode surface portion is L,
a melting point of the bonding material is Tm,
an ambient temperature is Ta,
a radius of a circular pedestal configured by the first electrode surface portion is r,
a length of a short side on which the control IC chip and the capacitor inside the electronic circuit body are disposed is b, and the following relation Equation is satisfied.
[
Equation
5
]
2
r
×
(
2
r
-
b
)
>
A
>
L
λ
×
J
(
Tm
-
Ta
)
.
(
5
)
10. The semiconductor device according to claim 8 , wherein
the breakdown voltage of the Zener diode is set to be lower than the breakdown voltage of the peripheral region even when a load dump occurs and a temperature of the Zener diode rises due to surge energy.
11. The semiconductor device according to claim 10 , wherein
an area of an active area of the MOSFET chip with the built-in Zener diode is A,
energy generated by the Zener diode in a unit time at a time of the load dump is J,
thermal conductivity of the MOSFET chip with the built-in Zener diode in a mounted state is λ,
a distance from the Zener diode to a bonding material which bonds the MOSFET chip with the built-in Zener diode and the first electrode surface portion or bonds the MOSFET chip with the built-in Zener diode and the second electrode surface portion is L,
a melting point of the bonding material is Tm,
an ambient temperature is Ta,
a radius of a circular pedestal configured by the first electrode surface portion is r,
a length of a short side on which the control IC chip and the capacitor inside the electronic circuit body are disposed is b, and the following relation Equation is satisfied.
[
Equation
5
]
2
r
×
(
2
r
-
b
)
>
A
>
L
λ
×
J
(
Tm
-
Ta
)
.
(
5
)
12. The semiconductor device according to claim 8 , wherein
a shape of the MOSFET chip with the built-in Zener diode is rectangular, and the control IC chip and the capacitor are arranged in a long side direction of the rectangle.
13. An alternator comprising the semiconductor device according to claim 1 .
14. The alternator according to claim 13 , wherein
a breakdown voltage of the Zener diode is set to be lower than the breakdown voltage of the peripheral region even when a load dump occurs and a temperature of the Zener diode rises due to surge energy.
15. The alternator according to claim 13 , wherein
a shape of the MOSFET chip with the built-in Zener diode is rectangular, and the control IC chip and the capacitor are arranged in a long side direction of the rectangle.
16. The alternator according to claim 13 , further comprising:
a semiconductor device of a forward high side and a semiconductor device of a reverse low side.
17. The alternator according to claim 16 , wherein
a breakdown voltage of the Zener diode is set to be lower than the breakdown voltage of the peripheral region even when a load dump occurs and a temperature of the Zener diode rises due to surge energy.
18. The alternator according to claim 16 , wherein
a shape of the MOSFET chip with the built-in Zener diode is rectangular, and the control IC chip and the capacitor are arranged in a long side direction of the rectangle.