Oxide material and semiconductor device
An object is to provide a material suitably used for a semiconductor included in a transistor, a diode, or the like. Another object is to provide a semiconductor device including a transistor in which the condition of an electron state at an interface between an oxide semiconductor film and a gate insulating film in contact with the oxide semiconductor film is favorable. Further, another object is to manufacture a highly reliable semiconductor device by giving stable electric characteristics to a transistor in which an oxide semiconductor film is used for a channel. A semiconductor device is formed using an oxide material which includes crystal with c-axis alignment, which has a triangular or hexagonal atomic arrangement when seen from the direction of a surface or an interface and rotates around the c-axis.
1. A transistor comprising:
an oxide semiconductor layer comprising a stack of a first film and a second film,
wherein a superficial region of the oxide semiconductor layer comprises c-axis aligned crystals,
wherein the c-axis aligned crystals have different a-axes and b-axes from each other,
wherein the oxide semiconductor layer comprises In, Sn, Ga and Zn, and
wherein a channel region is included in the oxide semiconductor layer.
2. The transistor according to claim 1 , wherein the first film and the second film have a different composition from each other.
3. The transistor according to claim 1 , further comprising:
a first insulating film under and in contact with the oxide semiconductor layer;
wherein the first insulating film comprises silicon and oxygen.
4. The transistor according to claim 1 , further comprising:
a second insulating film over and in contact with the oxide semiconductor layer,
wherein the second insulating film comprises silicon and oxygen.
5. The transistor according to claim 1 , further comprising:
a first insulating film under and in contact with the oxide semiconductor layer; and
a second insulating film over and in contact with the oxide semiconductor layer,
wherein each of the first insulating film and the second insulating film comprises silicon and oxygen.
6. A display device comprising:
the transistor according to claim 1 ; and
a pixel electrode electrically connected to the transistor.
7. A display device comprising:
the transistor according to claim 1 ; and
a liquid crystal element electrically connected to the transistor; and
a capacitor electrically connected to the transistor.
8. The transistor according to claim 1 , wherein the superficial region has unclear grain boundaries between the c-axis aligned crystals.
9. The transistor according to claim 1 , wherein the second film is positioned over the first film.
10. The transistor according to claim 1 ,
wherein the first film comprises a region comprising second crystals,
wherein metal atoms in the region comprising the second crystals are arranged in a layered manner in a c-axis direction, and are not arranged in a regular manner in an a-axis direction and a b-axis direction, and
wherein the second film is positioned over the first film.
11. A transistor comprising:
a gate electrode;
a gate insulating film over the gate electrode; and
an oxide semiconductor layer comprising a stack of a first film and a second film over the gate insulating film,
wherein a superficial region of the oxide semiconductor layer comprises c-axis aligned crystals,
wherein the c-axis aligned crystals have different a-axes and b-axes from each other,
wherein the oxide semiconductor layer comprises In, Sn, Ga and Zn, and
wherein a channel region is included in the oxide semiconductor layer.
12. The transistor according to claim 11 , wherein the first film and the second film have a different composition from each other.
13. The transistor according to claim 11 , wherein the transistor is positioned over a substrate.
14. The transistor according to claim 11 , further comprising a first insulating film between the gate electrode and the oxide semiconductor layer,
wherein the first insulating film is in contact with the oxide semiconductor layer, and
wherein the first insulating film comprises silicon and oxygen.
15. The transistor according to claim 14 , further comprising a second insulating film over and in contact with the oxide semiconductor layer,
wherein the second insulating film comprises silicon and oxygen.
16. A display device comprising:
the transistor according to claim 11 ; and
a pixel electrode electrically connected to the transistor.
17. A display device comprising:
the transistor according to claim 11 ; and
a liquid crystal element electrically connected to the transistor; and
a capacitor electrically connected to the transistor.
18. A transistor comprising:
an oxide semiconductor layer comprising a stack of a first film and a second film;
a gate insulating film over the oxide semiconductor layer; and
a gate electrode over the gate insulating film,
wherein a superficial region of the oxide semiconductor layer comprises c-axis aligned crystals,
wherein the c-axis aligned crystals have different a-axes and b-axes from each other,
wherein the oxide semiconductor layer comprises In, Sn, Ga and Zn, and
wherein a channel region is included in the oxide semiconductor layer.
19. The transistor according to claim 18 , wherein the first film and the second film have a different composition from each other.
20. The transistor according to claim 18 , wherein the transistor is positioned over a substrate.
21. The transistor according to claim 18 ,
wherein the gate insulating film comprises silicon and oxygen.
22. The transistor according to claim 18 , further comprising a first insulating film under and in contact with the oxide semiconductor layer,
wherein the first insulating film comprises silicon and oxygen.
23. A display device comprising:
the transistor according to claim 18 ; and
a pixel electrode electrically connected to the transistor.
24. A display device comprising:
the transistor according to claim 18 ; and
a liquid crystal element electrically connected to the transistor; and
a capacitor electrically connected to the transistor.