CBRAM with controlled bridge location
Devices with settable resistance and methods of forming the same include forming vertical dielectric structures from heterogeneous dielectric materials on a first electrode. A second electrode is formed on the vertical dielectric structures.
1. A method for forming a device with a settable resistance, comprising:
forming a plurality of vertical dielectric structures from heterogeneous dielectric materials on a first electrode, by forming a mandrel from a first dielectric material that partially covers the first electrode and forming a first sidewall spacer from a second dielectric material, different from the first dielectric material, on a sidewall of the mandrel; and
forming a second electrode on the plurality of vertical dielectric structures.
2. The method of claim 1 , wherein forming the plurality of vertical dielectric structures further comprises forming a second sidewall spacer from a third dielectric material, different from the second dielectric material, on a sidewall of the first sidewall spacer.
3. The method of claim 2 , wherein forming the plurality of vertical dielectric structures further comprises forming a third sidewall spacer from the second dielectric material on a sidewall of the second sidewall spacer.
4. The method of claim 1 , wherein forming the plurality of vertical dielectric structures further comprises forming an interlayer dielectric from the first dielectric material on a sidewall of the first sidewall spacer.
5. The method of claim 1 , wherein the second electrode is formed from a conductive material that does undergo electromigration when a current is applied.
6. The method of claim 5 , wherein the second electrode is formed from a material selected from the group consisting of silver, copper, and silver/copper alloys.
7. A method for forming a device with a settable resistance, comprising:
forming a plurality of vertical dielectric structures from heterogeneous dielectric materials on a first electrode, including forming spacer remnants on a sidewall of the first electrode; and
forming a second electrode on the plurality of vertical dielectric structures.
8. The method of claim 7 , wherein forming the plurality of vertical dielectric structures comprises forming a mandrel from a first dielectric material that partially covers the first electrode.
9. The method of claim 8 , wherein forming the plurality of vertical dielectric structures further comprises forming a first sidewall spacer from a second dielectric material, different from the first dielectric material, on a sidewall of the mandrel.
10. The method of claim 9 , wherein forming the plurality of vertical dielectric structures further comprises forming a second sidewall spacer from a third dielectric material, different from the second dielectric material, on a sidewall of the first sidewall spacer.
11. The method of claim 10 , wherein forming the plurality of vertical dielectric structures further comprises forming a third sidewall spacer from the second dielectric material on a sidewall of the second sidewall spacer.
12. The method of claim 9 , wherein forming the plurality of vertical dielectric structures further comprises forming an interlayer dielectric from the first dielectric material on a sidewall of the first sidewall spacer.
13. The method of claim 7 , wherein the second electrode is formed from a conductive material that does undergo electromigration when a current is applied.
14. The method of claim 13 , wherein the second electrode is formed from a material selected from the group consisting of silver, copper, and silver/copper alloys.