IP Library › Granted Patent US 11,053,590
Granted Patent B2
US 11,053,590 · App. 16/584,707 · Granted Jul 6, 2021

Nozzle for uniform plasma processing

Inventors: Rohit Mishra (Santa Clara, CA); Siva Suri Chandra Rao Bhesetti (Singapore, SG); Eng Sheng Peh (Singapore, SG); Sriskantharajah Thirunavukarasu (Singapore, SG); Shoju Vayyapron (Bangalore, IN); Cheng Sun (Singapore, SG)
Assignee: Applied Materials, Inc.
C23C16/50C23C16/45565H01J37/3244
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Quick Facts
Patent No.
US 11,053,590
App. No.
16/584,707
Granted
Jul 6, 2021
Kind
B2
Abstract

A nozzle for uniform plasma processing comprises an inlet portion and an outlet portion. The inlet portion has a side surface substantially parallel to a vertical axis. The inlet portion comprises a plurality of gas channels. The outlet portion is coupled to the inlet portion. The outlet portion comprises a plurality of outlets. At least one of the outlets is at an angle other than a right angle relative to the vertical axis.

Claims (20)

1. An apparatus for uniform plasma processing comprising:

a nozzle comprising:

an inlet portion comprising a plurality of gas channels, the inlet portion having a side surface substantially parallel to a vertical axis;

a cavity below the plurality of gas channels; and

an outlet portion below the cavity, wherein the outlet portion comprises a plurality of outlets, wherein at least one of the outlets is at an angle other than a right angle relative to the vertical axis, and wherein the outlet portion has a concave shape; and

a support feature in the cavity between the inlet portion and the outlet portion.

2. The apparatus of claim 1 , wherein at least one of the gas channels extends at an angle relative to the vertical axis.

3. The apparatus of claim 1 , wherein the number of outlets is greater than the number of gas channels.

4. The apparatus of claim 1 , wherein the outlet portion comprises at least one step.

5. The apparatus of claim 1 , wherein the outlet portion comprises a side surface that extends at an angle to the vertical axis.

6. A plasma processing system comprising:

a processing chamber comprising a pedestal to hold a workpiece comprising a substrate;

a plasma source;

a nozzle coupled to the plasma source to receive a gas to generate plasma in the processing chamber, wherein the nozzle comprises an inlet portion comprising a plurality of gas channels, the inlet portion comprises a side surface substantially parallel to a vertical axis, a cavity below the plurality of gas channels;

an outlet portion below the cavity, the outlet portion comprising a plurality of outlets, wherein at least one of the outlets is at an angle other than a right angle relative to the vertical axis, and wherein the outlet portion has a concave shape; and

a support feature in the cavity between the inlet portion and the outlet portion.

7. The system of claim 6 , wherein at least one of the gas channels extends at an angle relative to the vertical axis.

8. The system of claim 6 , wherein the number of outlets is greater than the number of gas channels.

9. The system of claim 6 , wherein the outlet portion comprises at least one step.

10. The system of claim 6 , wherein the outlet portion comprises a side surface that extends at an angle to the vertical axis.

Continuity (2)
Division 14461318 · Aug 15, 2014
Related Publication 20200017972A1 · Jan 16, 2020