Apparatus and system having extraction assembly for wide angle ion beam
An ion beam processing apparatus may include a plasma chamber, and a plasma plate, disposed alongside the plasma chamber, where the plasma plate defines a first extraction aperture. The apparatus may include a beam blocker, disposed within the plasma chamber and facing the extraction aperture. The apparatus may further include a non-planar electrode, disposed adjacent the beam blocker and outside of the plasma chamber; and an extraction plate, disposed outside the plasma plate, and defining a second extraction aperture, aligned with the first extraction aperture.
1. An ion beam processing apparatus comprising:
a plasma chamber;
a plasma plate, disposed alongside the plasma chamber, the plasma plate defining a first extraction aperture;
a beam blocker, disposed within the plasma chamber and facing the extraction aperture;
a non-planar electrode, disposed adjacent the beam blocker and outside of the plasma chamber;
an extraction plate, disposed outside the plasma plate, and defining a second extraction aperture, aligned with the first extraction aperture; and
an extraction voltage supply, being electrically coupled to bias the extraction plate, the non-planar electrode, and the substrate at a same voltage with respect to the plasma chamber.
2. The ion beam processing apparatus of claim 1 , wherein the plasma plate comprises an electrical insulator body, and the beam blocker comprises an electrical insulator body.
3. The ion beam processing apparatus of claim 1 , wherein the non-planar electrode comprises a first dielectric coating, surrounding an electrically conductive inner electrode, and wherein the extraction plate comprises a second dielectric coating, disposed on an electrically conductive inner plate portion.
4. The ion beam processing apparatus of claim 1 , wherein the non-planar electrode comprises a triangular shape in cross-section along a first direction, the first direction being perpendicular to a plane of the plasma plate.
5. The ion beam processing apparatus of claim 1 , wherein the extraction plate is movable with respect to the plasma plate, along a first direction, the first direction being perpendicular to a plane of the plasma plate.
6. The ion beam processing apparatus of claim 1 , wherein the first extraction aperture and the second extraction aperture comprise an elongated shape.
7. The ion beam processing apparatus of claim 1 , wherein the extraction plate comprises a first part and a second part, mutually movable with respect to one another along a scan direction, so as to change a size of the second extraction aperture.
8. The ion beam processing apparatus of claim 1 , wherein the beam blocker, non-planar electrode, plasma plate, and extraction plate are mutually disposed to extract an ion beam as a pair of ion beamlets, characterized by an extraction angle having a value of 30 degrees or greater with respect to a normal to a plane of the plasma plate.
9. An ion beam processing system comprising:
a plasma chamber;
an extraction assembly, disposed along a side of the plasma chamber, comprising:
a plasma plate, disposed alongside the plasma chamber, the plasma plate defining a first extraction aperture;
a beam blocker, disposed within the plasma chamber and facing the extraction aperture;
a non-planar electrode, disposed adjacent the beam blocker and outside of the plasma chamber; and
an extraction plate, disposed outside the plasma plate, and defining a second extraction aperture, aligned with the first extraction aperture; and
an extraction voltage system, electrically coupled to the plasma chamber and the extraction plate to generate a bias voltage between the extraction plate and the plasma chamber, the extraction voltage system being electrically coupled to bias the extraction plate, the non-planar electrode, and the substrate at a same voltage with respect to the plasma chamber.
10. The ion beam processing system of claim 9 , the extraction voltage system having a pulse component, to generate a pulsed bias voltage between the extraction plate and the plasma chamber.
11. The ion beam processing system of claim 9 , wherein the plasma plate comprises an electrical insulator body, and the beam blocker comprises an electrical insulator body.
12. The ion beam processing system of claim 9 , wherein the non-planar electrode comprises a first dielectric coating, surrounding an electrically conductive inner electrode, and wherein the extraction plate comprises a second dielectric coating, disposed on an electrically conductive inner plate portion.
13. The ion beam processing system of claim 9 , wherein the non-planar electrode comprises a triangular shape in cross-section along a first direction, the first direction being perpendicular to a plane of the plasma plate.
14. The ion beam processing system of claim 9 , wherein the extraction plate is movable with respect to the plasma plate, along a first direction, the first direction being perpendicular to a plane of the plasma plate.
15. The ion beam processing system of claim 9 , wherein the extraction plate comprises a first part and a second part, mutually movable with respect to one another along a scan direction, so as to change a size of the second extraction aperture.
16. The ion beam processing system of claim 9 , further comprising a process chamber to house a substrate, the extraction voltage system being electrically coupled to supply a first voltage to the plasma chamber, and being electrically coupled to supply a second voltage to the extraction plate, the non-planar electrode, and the substrate, the second voltage being more negative than the first voltage.
17. The ion beam processing system of claim 16 , wherein the first extraction aperture and the second extraction aperture are elongated along a first direction, the ion beam processing system further comprising a substrate stage, disposed to scan the substrate along a scan direction, perpendicular to the first direction.