Hetero-epitaxial output device array with serial connections
View Patent ↗A GaN-on-Si output transistor array comprises a plurality of small monolithic output transistors. Multiple pieces of the small monolithic GaN films are grown epitaxially on the silicon substrate. Each small monolithic output transistor is formed in a respective small monolithic GaN film. The normal transistors are connected in serial, while the defective transistors are not connected.
1. A hetero-epitaxial output device array, comprising:
a substrate comprising a substrate material;
a semiconductor film grown epitaxially on said substrate comprising a semiconductor material with different lattice constant and/or thermal expansion coefficient from said substrate material, wherein said semiconductor film comprises first, second and third device regions separated by at least a separation region, the semiconductor films in said first, second and third device regions are different from the semiconductor film in said separation region;
first, second and third output devices respectively formed in said first, second and third device regions, wherein said first output device is a defective device and disabled, said second and third output devices are normal devices and serially connected.
2. The output device array according to claim 1 , further comprising a boundary region surrounding the whole of said output device array, wherein the semiconductor film in said boundary region is different from the semiconductor film in said separation region and the semiconductor films in said first, second and third device regions.
3. The output device array according to claim 2 , wherein the width of said boundary region is larger than the width of said separation region.
4. The output device array according to claim 1 , wherein said first output device is not communicatively coupled with said second and third output devices.
5. The output device array according to claim 1 , wherein at least two terminals of said first output device are shorted together.
6. The output device array according to claim 1 , further comprising at least a memory for storing the data related to a test result performed to said first, second or third output devices.
7. A hetero-epitaxial output device array, comprising:
a substrate comprising a substrate material;
a semiconductor film grown epitaxially on said substrate comprising a semiconductor material with different lattice constant and/or thermal expansion coefficient from said substrate material, wherein said semiconductor film comprises a plurality of device regions separated by at least a separation region, the semiconductor films in said plurality of device regions are different from the semiconductor film in said separation region;
a plurality of output devices respectively formed in said plurality of device regions, said output devices including at least a defective output device and a plurality of normal output devices, wherein said defective output device is disabled; and, said normal output devices are serially connected.
8. The output device array according to claim 7 , further comprising a boundary region surrounding the whole of said output device array, wherein the semiconductor film in said boundary region is different from both the semiconductor film in said separation region and the semiconductor films in said plurality of device regions.
9. The output device array according to claim 8 , wherein the width of said boundary region is larger than the width of said separation region.
10. The output device array according to claim 7 , wherein said defective device is not communicatively coupled with said normal output devices.
11. The output device array according to claim 7 , wherein at least two terminals of said defective output device are shorted together.
12. The output device array according to claim 7 , further comprising at least a memory for storing the data related to a test result performed to said output devices in a test mode.