Electronic device including quantum dots
An electroluminescent device includes a first electrode and a second electrode facing each other, and an emissive layer disposed between the first electrode and the second electrode and including the quantum dots. The quantum dots include a semiconductor nanocrystal core including indium (In) and phosphorous (P), a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the first semiconductor nanocrystal shell including zinc and selenium, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell, the second semiconductor nanocrystal shell including zinc and sulfur, wherein the quantum dots do not include cadmium. The electroluminescent device has an external quantum efficiency of greater than or equal to about 9% and a maximum brightness of greater than or equal to about 10,000 candelas per square meter (cd/m 2 ).
1. An electroluminescent device, comprising
a first electrode and a second electrode facing each other, and
an emissive layer disposed between the first electrode and the second electrode, the emissive layer comprising core/shell quantum dots,
wherein the core/shell quantum dots comprise a semiconductor nanocrystal core comprising indium and phosphorous, and a shell disposed on the core, the shell comprising zinc, selenium, and sulfur,
wherein the core/shell quantum dots do not comprise cadmium,
wherein the electroluminescent device has a maximum external quantum efficiency of greater than or equal to about 9%,
wherein the electroluminescent device has a maximum luminance of greater than or equal to about 10,000 candelas per square meter (cd/m 2 ), and
wherein in the core/shell quantum dots, a mole ratio of sulfur to selenium is greater than or equal to about 0.01:1 and less than or equal to about 1:1.
2. The electroluminescent device of claim 1 , wherein a wavelength of a maximum photoluminescent peak of the core/shell quantum dots is present in a range of greater than or equal to about 600 nanometers and less than or equal to about 650 nanometers.
3. The electroluminescent device of claim 1 , wherein the electroluminescent device has a maximum luminance of greater than or equal to about 20,000 cd/m 2 .
4. The electroluminescent device of claim 1 , wherein in the core/shell quantum dots, the molar ratio of indium to a sum of sulfur and selenium In:(Se+S) is greater than or equal to about 0.02:1 and less than or equal to about 0.1:1.
5. The electroluminescent device of claim 1 , wherein in the core/shell quantum dots, a molar ratio of sulfur to selenium S:Se is less than or equal to about 0.5:1.
6. The electroluminescent device of claim 1 , wherein the shell comprises:
a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the first semiconductor nanocrystal shell comprising zinc and selenium, and
a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell, the second semiconductor nanocrystal shell comprising zinc and sulfur.
7. The electroluminescent device of claim 6 , wherein the first semiconductor nanocrystal shell is disposed directly on a surface of the semiconductor nanocrystal core and the first semiconductor nanocrystal shell does not comprise sulfur.
8. The electroluminescent device of claim 7 , wherein the second semiconductor nanocrystal shell is an outermost layer of the quantum dots and the second semiconductor nanocrystal shell is disposed directly on a surface of the first semiconductor nanocrystal shell.
9. The electroluminescent device of claim 1 , wherein a difference between a maximum photoluminescent peak wavelength and a first absorption peak wavelength of the core/shell quantum dots is less than or equal to about 16 nanometers.
10. An electroluminescent device, comprising
a first electrode and a second electrode facing each other,
an emissive layer disposed between the first electrode and the second electrode, the emissive layer comprising core/shell quantum dots, and
wherein the core/shell quantum dots comprise a semiconductor nanocrystal core comprising indium and phosphorous, and a shell disposed on the core, the shell comprising zinc, selenium, and sulfur,
wherein the core/shell quantum dots do not comprise cadmium,
wherein in the core/shell quantum dots, a mole ratio of sulfur to selenium is less than or equal to about 1:1, and
wherein the electroluminescent device exhibits a maximum luminance of greater than or equal to about 10,000 candelas per square meter (cd/m 2 ) or a maximum external quantum efficiency of greater than or equal to about 9%.
11. The electroluminescent device of claim 10 , wherein a wavelength of a maximum photoluminescent peak of the core/shell quantum dots is present in a range of greater than or equal to about 600 nanometers and less than or equal to about 650 nanometers.
12. The electroluminescent device of claim 10 , wherein in the core/shell quantum dots, the molar ratio of indium to a sum of sulfur and selenium In:(Se+S) is greater than or equal to about 0.02:1 and less than or equal to about 0.1:1.
13. The electroluminescent device of claim 10 , wherein in the core/shell quantum dots, a molar ratio of sulfur to selenium S:Se is greater than or equal to about 0.01:1 and less than or equal to about 0.5:1.
14. The electroluminescent device of claim 10 , wherein in the core/shell quantum dots, a molar ratio of zinc to indium is greater than or equal to about 15:1 and less than or equal to about 52:1.
15. The electroluminescent device of claim 10 , wherein the shell comprises:
a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the first semiconductor nanocrystal shell comprising zinc and selenium, and
a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell, the second semiconductor nanocrystal shell comprising zinc and sulfur.
16. The electroluminescent device of claim 10 , wherein the electroluminescent device has a maximum luminance of greater than or equal to about 20,000 cd/m 2 .
17. Core/Shell Quantum dots comprising a semiconductor nanocrystal core comprising indium and phosphorous, and a shell disposed on the core, the shell comprising zinc, selenium, and sulfur,
wherein the core/shell quantum dots do not comprise cadmium,
wherein in the core/shell quantum dots, a molar ratio of sulfur to selenium S:Se is greater than or equal to about 0.01:1 and less than or equal to about 1:1, and
wherein a difference between a maximum photoluminescent peak wavelength and a first absorption peak wavelength of the core/shell quantum dots is less than or equal to about 20 nanometers.
18. The core/shell quantum dots of claim 17 , wherein in the core/shell quantum dots, a molar ratio of indium to a sum of sulfur and selenium In:(Se+S) is greater than or equal to about 0.02:1 and less than or equal to about 0.1:1.
19. The core/shell quantum dots of claim 17 , wherein the shell comprises:
a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the first semiconductor nanocrystal shell comprising zinc and selenium, and
a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell, the second semiconductor nanocrystal shell comprising zinc and sulfur.
20. The core/shell quantum dots of claim 17 , wherein the molar ratio of sulfur to selenium S:Se is less than or equal to about 0.5:1.