Silicon carbide semiconductor component

1. A semiconductor component, comprising:

a SiC semiconductor body comprising a first surface, a second surface opposite from the first surface, a drift zone of a first conductivity type;

gate structures; and

barrier structures that are laterally spaced apart from one another, the barrier structures differing from the gate structures,

wherein the gate structures are disposed at the first surface of the SiC semiconductor body,

wherein a first center-to-center distance between the barrier structures is greater than a second center-to-center distance between the gate structures,

wherein either:

at least two of the barrier structures extend across a pn junction between the drift zone and a region of a second conductivity type that is disposed between the drift zone and the first surface, or

at least two of the barrier structures extend across a unipolar junction between the drift zone and a region of the first conductivity type that is disposed between the drift zone and the second surface, the region of the first conductivity type being more highly doped than the drift zone, and

wherein immediately adjacent ones of the barrier structures are laterally spaced apart from one another such that at least 90% of principal lattice planes of the SiC semiconductor body adjoin one of the barrier structures in the drift zone and the pn junction or unipolar junction to which the one of the barrier structures extends across.

2. The semiconductor component of claim 1 , wherein the gate structures extend from the first surface of the SiC semiconductor body into the SiC semiconductor body, wherein a first distance between a lower edge of the barrier structures and the first surface is greater than a second distance between a lower edge of the gate structures and the first surface.

3. The semiconductor component of claim 2 , further comprising:

a body region of the second conductivity type,

wherein a dopant concentration in the body region has at most 50% of a dopant concentration in the region of the second conductivity type,

wherein at least two of the barrier structures extend across the pn junction between the drift zone and the region of the second conductivity type, and

wherein the body region is at a greater distance from the second surface of the SiC semiconductor body than the region of the second conductivity type.

4. The semiconductor component of claim 1 , wherein at least two of the barrier structures extend across the pn junction between the drift zone and the region of the second conductivity type, and wherein the semiconductor component further comprises:

a source region of the conductivity type of the drift zone and formed between the first surface and the drift zone, the source region forming a transistor pn junction with the region of the second conductivity type.

5. The semiconductor component of claim 1 , wherein a polytype of the SiC semiconductor body is a 4H-SiC polytype, and wherein the principal lattice planes are (0001) lattice planes which intersect the pn junction or the unipolar junction to which the one of the barrier structures extends across at an angle of at least 2° and at most 8°.

6. The semiconductor component of claim 5 , wherein the barrier structures have a transverse extent and a longitudinal extent perpendicular to the transverse extent, the longitudinal extent being at least five times the transverse extent, wherein the longitudinal extent extends parallel to lines of intersection between the principal lattice planes and the and the pn junction or the unipolar junction to which the one of the barrier structures extends across.

7. The semiconductor component of claim 1 , wherein a bulk breakdown strength of the barrier structures is at least 90% of a bulk breakdown strength of a part of the drift zone that is adjacent to the barrier structures.

8. The semiconductor component of claim 1 , wherein the barrier structures comprise polycrystalline silicon carbide, amorphous silicon carbide, crystalline silicon carbide of a different crystal type, having a different crystal orientation, and/or crystalline silicon carbide of a different polytype than the drift zone.

9. The semiconductor component of claim 1 , wherein at least two of the gate structures are laterally disposed between immediately adjacent ones of the barrier structures.

10. The semiconductor component of claim 1 , wherein at least two of the barrier structures extend across the pn junction between the drift zone and the region of the second conductivity type, and wherein at least two of the barrier structures extend across the pn junction between the drift zone and the region of the second conductivity type that is disposed between the drift zone and the first surface.

11. The semiconductor component of claim 1 , wherein at least two of the barrier structures extend across the unipolar junction between the drift zone and the region of the first conductivity type that is disposed between the drift zone and the second surface, and wherein at least two of the barrier structures extend across the unipolar junction between the drift zone and the region of the first conductivity type that is disposed between the drift zone and the second surface.

12. The semiconductor component of claim 1 , wherein at least two of the barrier structures extend across the pn junction between the drift zone and the region of the second conductivity type that is disposed between the drift zone and the first surface, and at least another two of the barrier structures extend across the unipolar junction between the drift zone and the region of the first conductivity type that is disposed between the drift zone and the second surface, wherein bottoms of the at least two of the barrier structures that extend across the pn junction terminate in the drift zone, and wherein bottoms of the at least two of the barrier structures that extend across the unipolar junction terminate in the drift zone.