IP Library Granted Patent US 11,063,576
Granted Patent B2
US 11,063,576 · App. 16/135,050 · Granted Jul 13, 2021

Front end module for 5.6 GHz Wi-Fi acoustic wave resonator RF filter circuit

Inventors: Jeffrey B. Shealy (Cornelius, NC); Rohan W. Houlden (Oak Ridge, NC); Shawn R. Gibb (Huntersville, NC); David M. Aichele (Huntersville, NC)
Assignee: Akoustis, Inc.
H03H9/545H03F3/19H03F3/195H03F3/24H03F3/245H03H9/105H04B1/0458H04B1/40H03F2200/294H03F2200/451H03H3/02H03H9/02118H03H9/0514H03H9/0523H03H9/1014H03H9/171H03H9/173H03H9/174H03H9/175H03H2003/021H03H2003/023H03H2003/025
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Quick Facts
Patent No.
US 11,063,576
App. No.
16/135,050
Granted
Jul 13, 2021
Kind
B2
Abstract

A front end module (FEM) for a 5.6 GHz Wi-Fi acoustic wave resonator RF filter circuit. The device can include a power amplifier (PA), a 5.6 GHz resonator, and a diversity switch. The device can further include a low noise amplifier (LNA). The PA is electrically coupled to an input node and can be configured to a DC power detector or an RF power detector. The resonator can be configured between the PA and the diversity switch, or between the diversity switch and an antenna. The LNA may be configured to the diversity switch or be electrically isolated from the switch. Another 5.6 GHZ resonator may be configured between the diversity switch and the LNA. In a specific example, this device integrates a 5.6 GHz PA, a 5.6 GHZ bulk acoustic wave (BAW) RF filter, a single pole two throw (SP2T) switch, and a bypassable LNA into a single device.

Claims (58)

1. A 5.6 GHz front end module (FEM) device, the device comprising:

a power amplifier (PA) electrically coupled to an input node;

a 5.6 GHz resonator electrically coupled to the PA; and

a diversity switch electrically coupled to the 5.6 GHz resonator, an output node, and an antenna;

wherein the 5.6 GHz resonator comprises

a substrate;

a support layer overlying the substrate, the support layer having an air cavity;

a first electrode overlying the air cavity and a portion of the support layer;

a first passivation layer overlying the support layer and being physically coupled to the first electrode;

a piezoelectric film overlying the support layer, the first electrode, and the air cavity, the piezoelectric film having an electrode contact via;

a second electrode formed overlying the piezoelectric film; and

a top metal formed overlying the piezoelectric film, the top metal being physically coupled to the first electrode through the electrode contact via.

2. The device of claim 1 wherein the PA comprises a 5.6 GHz power amplifier.

3. The device of claim 1 wherein the 5.6 GHz resonator comprises a 5.6 GHz bulk acoustic wave (BAW) resonator.

4. The device of claim 1 wherein the diversity switch comprises a single pole two throw (SP2T) switch.

5. The device of claim 1 further comprising a low noise amplifier (LNA) electrically coupled to an LNA input node and an LNA output node.

6. The device of claim 5 wherein the LNA comprises a bypassable LNA.

7. The device of claim 1 further comprising a DC power detector having a voltage output, the DC power detector being electrically coupled to the PA.

8. The device of claim 1 further comprising an RF power detector having an RF output from a directional coupler, the RF power detector being electrically coupled to the PA.

9. A 5.6 GHz front end module (FEM) device, the device comprising:

a power amplifier (PA) electrically coupled to an input node;

a diversity switch electrically coupled to the PA and an output node; and

a 5.6 GHz resonator electrically coupled to the diversity switch and an antenna;

wherein the 5.6 GHz resonator comprises

a substrate;

a support layer overlying the substrate, the support layer having an air cavity;

a first electrode overlying the air cavity and a portion of the support layer;

a first passivation layer overlying the support layer and being physically coupled to the first electrode;

a piezoelectric film overlying the support layer, the first electrode, and the air cavity, the piezoelectric film having an electrode contact via;

a second electrode formed overlying the piezoelectric film; and

a top metal formed overlying the piezoelectric film, the top metal being physically coupled to the first electrode through the electrode contact via.

10. The device of claim 9 wherein the PA comprises a 5.6 GHz power amplifier.

11. The device of claim 9 wherein the 5.6 GHz resonator comprises a 5.6 GHz bulk acoustic wave (BAW) resonator.

12. The device of claim 9 wherein the diversity switch comprises a single pole two throw (SP2T) switch a single pole three throw (SP3T) switch.

13. The device of claim 9 further comprising a low noise amplifier (LNA) electrically coupled to an LNA input node and an LNA output node.

14. The device of claim 13 wherein the LNA comprises a bypassable LNA or wherein the diversity switch is electrically coupled to the LNA output node.

15. The device of claim 9 further comprising a DC power detector having a voltage output, the DC power detector being electrically coupled to the PA.

16. The device of claim 9 further comprising an RF power detector having an RF output from a directional coupler, the RF power detector being electrically coupled to the PA.

17. A 5.6 GHz front end module (FEM) device, the device comprising:

a power amplifier (PA) electrically coupled to an input node;

a first 5.6 GHz resonator electrically coupled to the PA;

a diversity switch electrically coupled to the 5.6 GHz resonator and an antenna; and

a second 5.6 GHz resonator electrically coupled to the diversity switch;

wherein the 5.6 GHz resonator comprises

a substrate;

a support layer overlying the substrate, the support layer having an air cavity;

a first electrode overlying the air cavity and a portion of the support layer;

a first passivation layer overlying the support layer and being physically coupled to the first electrode;

a piezoelectric film overlying the support layer, the first electrode, and the air cavity, the piezoelectric film having an electrode contact via;

a second electrode formed overlying the piezoelectric film; and

a top metal formed overlying the piezoelectric film, the top metal being physically coupled to the first electrode through the electrode contact via.

18. The device of claim 17 wherein the PA comprises a 5.6 GHz power amplifier.

19. The device of claim 17 wherein the first and second 5.6 GHz resonators each comprise a 5.6 GHz bulk acoustic wave (BAW) resonator.

20. The device of claim 17 wherein the diversity switch comprises a single pole two throw (SP2T) switch or a single pole three throw (SP3T) switch.

21. The device of claim 17 further comprising a low noise amplifier (LNA) electrically coupled to the second 5.6 GHz resonator and an LNA output node.

22. The device of claim 21 wherein the LNA comprises a bypassable LNA.

23. The device of claim 17 further comprising a DC power detector having a voltage output, the DC power detector being electrically coupled to the PA.

24. The device of claim 17 further comprising an RF power detector having an RF output from a directional coupler, the RF power detector being electrically coupled to the PA.

Assignments (3)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 13, 2025
From: AKOUSTIS TECHNOLOGIES, INC.; AKOUSTIS, INC.; RFM INTEGRATED DEVICE INC.
To: TUNE HOLDINGS CORP.
Reel/Frame 071411/0531 →
CHANGE OF NAME Recorded Jun 13, 2025
From: TUNE HOLDINGS CORP.
To: AKOUSTIS TECHNOLOGIES CORP.
Reel/Frame 071580/0524 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 19, 2018
From: SHEALY, JEFFREY B.; HOULDEN, ROHAN W.; GIBB, SHAWN R.; AICHELE, DAVID M.
To: AKOUSTIS, INC.
Reel/Frame 046916/0527 →
Continuity (5)
Continuation In Part 16020635 · Jun 27, 2018
Continuation In Part 16019267 · Jun 26, 2018
Continuation In Part 15784919 · Oct 16, 2017
Continuation In Part 15068510 · Mar 11, 2016
Related Publication 20190020328A1 · Jan 17, 2019