Transition metal chalcogenide van der waals films, methods of making same, and apparatuses and devices comprising same
Provided are van der Waals (VDW) films comprising one or more transition metal chalcogenide (TMD) films. Also provided are methods of making VDW films. The methods are based on transfer of monolayer TMD films under vacuum, for example, using a handle layer. Also provided are apparatuses and devices comprising one or more VDW film.
1. A method of forming a VDW film comprising one or more TMD monolayers, and having a heterostructure comprised of at least two atomically thin monolayer TMD building blocks, wherein the VDW film has no detectible carbon and less than one bubble defect and/or wrinkle defect per 2 micron×2 micron area, wherein an interlayer between two adjacent TMD monolayers is a clean, bubble-free and wrinkle-free interface comprising a constant distance, the method comprising:
providing a formation substrate having one or more transition metal dichalcogenide (TMD) monolayers disposed on the formation substrate;
dry peeling at least one of the TMD monolayer from the formation substrate;
transferring the TMD monolayer to a substrate under vacuum to form a Van der Waals (VDW) film;
optionally, repeating the providing, dry peeling, and transferring to form a VDW film comprising a plurality of TMD monolayers on the substrate.
2. The method of claim 1 , further comprising growing the TMD monolayers using metal-organic chemical vapor deposition (MOCVD).
3. A Van der Waals (VDW) film comprising one or more transition metal dichalcogenide (TMD) monolayers, and having a heterostructure comprised of at least two atomically thin monolayer TMD building blocks, wherein the VDW film has no detectible carbon and less than one bubble defect and/or wrinkle defect per 2 micron×2 micron area, wherein an interlayer between two adjacent TMD monolayers is a clean, bubble-free and wrinkle-free interface comprising a constant distance.
4. The VDW film of claim 3 , wherein the film comprises a heterostructure comprising two or more different TMD monolayers and the heterostructure comprises stacked layers of AB, AC, ABC, ABCDBCDA, or any combination thereof, wherein A, B, C and D are TMD layers or TMD monolayers having different compositions.
5. The VDW film of claim 3 , wherein the VDW film comprises one or more TMD monolayers selected from MoS 2 monolayers, WS 2 monolayers, MoSe 2 monolayers, WSe 2 monolayers, MoTe 2 monolayers, WTe 2 monolayers, NbSe 2 monolayers, and combinations thereof.
6. The VDW film of claim 3 , wherein the film comprises a heterostructure comprising at least three atomically thin monolayer TMD building blocks made from at least three different TMD materials.
7. The VDW film of claim 3 , wherein an interlayer between two adjacent TMD monolayers is a clean, bubble-free and wrinkle-free interface comprising a constant distance.
8. The VDW film of claim 3 , wherein the VDW film comprises three or more TMD layers, six or more TMD layers, or nine or more TMD layers.
9. The VDW film of claim 3 , wherein the thickness of each of the one or more TMD monolayers is controllable at sub-nm scale.
10. The VDW film of claim 3 , wherein the VDW film comprises at least two TMD layers having different composition.
11. The VDW film of claim 3 , wherein the film is disposed on a substrate.
12. An atomically-thin circuit comprising at least a portion of a VDW film of claim 3 .
13. The VDW film of claim 3 , comprising a heterostructure comprising at least two atomically thin monolayer TMD building blocks made from at least two different TMD materials.
14. The VDW film of claim 13 , wherein the at least two different TMD materials are independently selected from MoS 2 , WS 2 , NbS 2 , MoSe 2 , WSe 2 , MoTe 2 , WTe 2 , and NbSe 2 .
15. An apparatus comprising one or VDW film of claim 3 .
16. The apparatus of claim 15 , wherein the apparatus further comprises one or more non-TMD layers, wherein an individual non-TMD layer is not in contact with another non-TMD layer.
17. A device comprising a VDW film of claim 3 .
18. The device of claim 17 , wherein the device is a tunnel device, a transparent electronic device, an optical device, a micro-electromechanical systems device, a mechanical device, a photovoltaic device, an optomechanical device, or an optoelectrical device.
19. The device of claim 17 , wherein the device is a Josephson junction (JJ) array, a high current H-shape selector array, or quantum optical resonator.
20. The device of claim 17 , wherein the device is a capacitor, a diode, a membrane, or an optical window.