Semiconductor device
A semiconductor device includes a substrate having a mounting surface, a plurality of internal terminals disposed on the mounting surface, a light-receiving element mounted on the mounting surface, a light-emitting element mounted on the mounting surface, a first bonding wire and a light-transmitting element. The light-receiving element has a light-receiving region that detects light and a plurality of element pad portions. At least one of the plurality of element pad portions is electrically connected to the light-receiving region. The light-emitting element is spaced apart from the light-receiving element along a first direction perpendicular to a thickness direction of the substrate. The first bonding wire connects one of the plurality of element pad portions of the light-receiving element to one of the plurality of internal terminals. The first bonding wire is located on a side of the light-receiving element opposite the light-emitting element along the first direction.
1. A semiconductor device comprising:
a substrate having a mounting surface and an attachment surface facing away from each other;
a light-receiving element mounted on the mounting surface of the substrate, the light-receiving element having a light-receiving region that detects light;
a light-emitting element mounted on the mounting surface of the substrate and spaced apart from the light-receiving element in a first direction perpendicular to a thickness direction of the substrate;
a light-transmitting member covering the light-receiving element and the light-emitting element, the light-transmitting member having a convex lens from which light is emitted; and
a light-shielding member that covers the light-transmitting member and has a first opening exposing the lens,
wherein the lens has a first lens surface and a second lens surface that are next to each other in the first direction, the first lens surface being located between an imaginary plane perpendicular to the first direction and the light-receiving element, the second lens surface being located on a side of the imaginary plane opposite the first lens surface,
wherein a curvature radius of the first lens surface is smaller than a curvature radius of the second lens surface,
wherein an inner wall of the first opening includes a first portion facing the first lens surface and a second portion facing the second lens surface, and
wherein an inclination angle of the first portion relative to the first direction is larger than an inclination angle of the second portion relative to the first direction.
2. The semiconductor device according to claim 1 , wherein the lens has an elliptical shape elongated in a second direction in plan view, the second direction being perpendicular to both the first direction and a thickness direction of the substrate.
3. The semiconductor device according to claim 2 , wherein the first opening has an elliptical shape elongated in the second direction in plan view.
4. The semiconductor device according to claim 1 , wherein a clearance is provided between the lens and the inner wall of the first opening.
5. The semiconductor device according to claim 4 , wherein the inner wall of the first opening has a surface inclined toward a center of the first opening with a decreasing distance to the light-emitting element in the thickness direction of the substrate.
6. The semiconductor device according to claim 1 , wherein the light-transmitting member includes a first light-transmitting member and a second light-transmitting member, the first light-transmitting member covering the light-emitting element and having the lens, the second light-transmitting member covering the light-receiving element and having an incident region on which light is made incident, and
the first light-transmitting member and the second light-transmitting member are mounted on the mounting surface of the substrate and spaced apart from each other in the first direction.
7. The semiconductor device according to claim 6 , wherein the light-shielding member has a second opening exposing the incident region, and
the second opening is spaced apart from the first opening in the first direction.
8. The semiconductor device according to claim 7 , wherein the second opening has a circular shape in plan view.
9. The semiconductor device according to claim 7 , wherein an inner wall of the second opening has a surface inclined toward a center of the second opening with a decreasing distance to the light-receiving element in the thickness direction of the substrate.
10. The semiconductor device according to claim 9 , wherein an inclination angle of the inner wall of the second opening relative to the first direction is uniform along an entire circumference of the second opening.
11. The semiconductor device according to claim 9 , wherein the incident region is raised in the thickness direction of the substrate and has a flat surface perpendicular to the thickness direction of the substrate, the flat surface comprising an incident surface on which light is made incident.
12. The semiconductor device according to claim 11 , wherein the incident region has a circular shape in plan view.
13. The semiconductor device according to claim 11 , wherein a clearance is provided between the incident region and the inner wall of the second opening.
14. The semiconductor device according to claim 6 , wherein the light-shielding member has a partition wall shielding the first light-transmitting member and the second light-transmitting member from each other.
15. The semiconductor device according to claim 14 , wherein the substrate has a first groove recessed from the mounting surface and located between the first light-transmitting member and the second light-transmitting member, and
the partition wall is fitted in the first groove.
16. The semiconductor device according to claim 15 , wherein the substrate has a second groove that is recessed from the mounting surface to surround the first light-transmitting member and the second light-transmitting member, and
the light-shielding member is fitted in the second groove.
17. The semiconductor device according to claim 16 , wherein the first groove has a first end and a second end both of which are connected to the second groove.
18. The semiconductor device according to claim 6 , wherein the first light-transmitting member and the second light-transmitting member are made of an identical synthetic resin.
19. The semiconductor device according to claim 18 , wherein the light-shielding member is made of a synthetic resin having a different physical property from the synthetic resin of the first light-transmitting member and the second light-transmitting member, and wherein a glass transition point of the light-shielding member is lower than a glass transition point of the first light-transmitting member and the second light-transmitting member.
20. The semiconductor device according to claim 1 , further comprising a plurality of external terminals disposed on the attachment surface of the substrate, wherein each of the plurality of external terminals is electrically connected to the light-emitting element or the light-receiving element.
21. The semiconductor device according to claim 20 , wherein the plurality of external terminals are covered by a plating layer.
22. The semiconductor device according to claim 1 , wherein the light-receiving element comprises an integrated circuit, and the light-receiving region comprises a photodiode.
23. The semiconductor device according to claim 1 , wherein the light-emitting element comprises a light-emitting diode.