Optoelectronic device having a boron nitride alloy electron blocking layer and method of production
View Patent ↗An optoelectronic device a substrate, a first doped contact layer arranged on the substrate, a multiple quantum well layer arranged on the first doped contact layer, a boron nitride alloy electron blocking layer arranged on the multiple quantum well layer, and a second doped contact layer arranged on the boron nitride alloy electron blocking layer.
1. An optoelectronic device, comprising:
a light emitting diode comprising a multiple quantum well layer, an electron blocking layer, a first doped contact layer and a second doped contact layer; and
a high electron mobility transistor comprising a two-dimensional electron gas channel and the electron blocking layer, wherein the two-dimensional electron gas channel of the high electron mobility transistor is comprised of a portion of a last quantum barrier layer of the multiple quantum well layer of the light emitting diode,
wherein the electron blocking layer is a boron nitride alloy electron blocking layer arranged in contact with the last quantum barrier layer on the two-dimensional electron gas channel to allow the portion of the last quantum barrier layer to function as the two-dimensional electron gas channel of the high electron mobility transistor.
2. The optoelectronic device of claim 1 , wherein the boron nitride alloy electron blocking layer comprises:
B x Al 1-x N.
3. The optoelectronic device of claim 1 , wherein the multiple quantum well layer comprises:
at least one layer of gallium nitride; and
at least one layer of aluminum gallium nitride.
4. The optoelectronic device of claim 1 , further comprising:
a substrate, wherein
the first doped contact layer is arranged on the substrate,
the multiple quantum well layer is arranged on the first doped contact layer; and
the second doped contact layer is arranged on the boron nitride alloy electron blocking layer.
5. The optoelectronic device of claim 1 , wherein the optoelectronic device is a monolithically integrated device.
6. The optoelectronic device of claim 1 , wherein:
the high electron mobility transistor further comprises:
a gate;
a source in contact with the last quantum barrier layer; and
a drain in contact with the last quantum barrier layer; and
the last quantum barrier layer is shared between the light emitting diode and the high electron mobility transistor.