Compound semiconductor and use thereof
A novel compound semiconductor which can be used for a solar cell, a thermoelectric material, or the like, and the use thereof.
1. A compound semiconductor represented by the following Chemical Formula 1, comprising: a Co—Sb skutterudite compound; Sn and S that are included in internal voids of the Co—Sb skutterudite compound; and Q that is substituted with Sb of the Co—Sb skutterudite compound:
Sn x S y Co 4 Sb 12-z Q z [Chemical Formula 1]
wherein, in Chemical Formula 1, Q is at least one selected from the group consisting of O, Se, and Te, wherein 0<x<0.2, 0<y≤1, and 0<z<12, and
the molar ratio of x to 1 mol of y is 0.1 mol to 0.9 mol.
2. The compound semiconductor of claim 1 , wherein in Chemical Formula 1, the molar ratio of x to 1 mol of y is 0.2 mol to 0.8 mol.
3. The compound semiconductor of claim 1 , wherein in Chemical Formula 1, z is in the range of 0<z≤4.
4. The compound semiconductor of claim 1 , wherein in Chemical Formula 1, the molar ratio of x to 1 mol of z is 0.01 mol to 0.5 mol.
5. The compound semiconductor of claim 1 , wherein in Chemical Formula 1, the molar ratio of x to 1 mol of z is 0.05 mol to 0.3 mol.
6. The compound semiconductor of claim 1 , wherein the Co—Sb skutterudite compound comprises two voids per unit lattice.
7. The compound semiconductor of claim 1 , wherein the compound semiconductor is an N-type compound semiconductor.
8. A method for preparing the compound semiconductor of claim 1 comprising the steps of:
forming a mixture containing Sn, S, Co, Sb, and at least one element selected from the group consisting of O, Se and Te; and
thermally treating the mixture.
9. The method for preparing the compound semiconductor of claim 8 , wherein the thermal treatment step is performed at 400° C. to 800° C.
10. The method for preparing the compound semiconductor of claim 8 , wherein the thermal treatment step comprises two or more thermal treatment steps.
11. The method for preparing the compound semiconductor of claim 8 , further comprising a pressure-sintering step after thermally treating the mixture.
12. A thermoelectric conversion device comprising the compound semiconductor according to claim 1 .
13. A solar cell comprising the compound semiconductor according to claim 1 .