IP Library › Granted Patent US 11,074,961
Granted Patent B2
US 11,074,961 · App. 16/251,983 · Granted Jul 27, 2021

Method of performing internal processing operation of memory device

Inventors: Pavan Kumar Kasibhatla (Suwon-si, KR); Seong-il O (Suwon-si, KR); Hak-soo Yu (Seoul, KR)
Assignee: SAMSUNG ELECTRONICS CO., LTD.
G11C11/4091G06F15/7821G11C7/1006G11C11/4087G11C11/4093G11C11/4096
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Quick Facts
Patent No.
US 11,074,961
App. No.
16/251,983
Granted
Jul 27, 2021
Kind
B2
Abstract

Provided is a method of performing an internal processing operation of a memory device in a system including a host device and the memory device. The memory device includes a memory cell array and a processor-in-memory (PIM) performing an internal processing operation. In an internal processing mode, by the PIM, the memory device performs the internal processing operation based on internal processing information stored in the memory cell array. When the internal processing information is an internal processing operation command indicating a type of the internal processing operation, the memory device outputs the internal processing operation command including an internal processing read command and an internal processing write command to the host device. The host device issues to the memory device a priority command determined from among a data transaction command and the internal processing operation command.

Claims (33)

1. A memory device comprising:

a memory cell array configured to store internal processing information; and

a processor-in-memory (PIM) configured to perform an internal processing operation based on the internal processing information in an internal processing mode,

wherein, in response to the PIM determining that the internal processing information comprises an internal processing operation command indicating a type of the internal processing operation, the PIM requests, through dedicated pins, the internal processing operation from an external device and then receives the internal processing operation command, based on the request, from the external device.

2. The memory device of claim 1 , wherein the internal processing operation command comprises an internal processing read command and an internal processing write command associated with the internal processing operation.

3. The memory device of claim 1 , further comprising a command/address buffer configured to receive a command issued from the external device,

wherein the PM comprises a command detector configured to determine whether the received command comprises the internal processing operation command.

4. The memory device of claim 3 , wherein, in response to determining that the received command comprises the internal processing operation command, the PIM performs a data communication operation with the memory cell array according to the internal processing operation command.

5. The memory device of claim 1 , wherein the internal processing operation command is generated during the internal processing operation performed by the PIM based on the internal processing operation information, and comprises an internal processing read command and an internal processing write command associated with the internal processing operation, and

wherein the PIM comprises a command queue configured to store and output to the external device at least one of the internal processing read command and the internal processing write command.

6. The memory device of claim 1 , wherein the PIM is configured to receive from the external device an internal processing mode signal instructing entry into the internal processing mode.

7. The memory device of claim 6 , wherein the PM is configured to receive from the external device the internal processing mode signal through signal lines of a first channel performing a predetermined protocol between the external device and the memory device.

8. The memory device of claim 6 , wherein the PIM is configured to receive from the external device the internal processing mode signal through a dedicated signal line of a second channel between the external device and the memory device.

9. The memory device of claim 1 , wherein the PIM is configured to request the internal processing operation command from the external device through a dedicated signal line of a second channel between the external device and the memory device.

10. The memory device of claim 1 , wherein the PIM is further configured to generate a completion signal indicating completion of the internal processing operation, and transmit the completion signal to the external device to exit the internal processing mode.

11. The memory device of claim 10 , wherein the internal processing operation comprises at least one of an operation of reading internal processing data comprising at least one of reference data, source data, destination data and target data, and an operation of writing a result of the other internal processing operation to the memory cell array.

12. The memory device of claim 10 , wherein the internal processing operation comprises at least one of data search, data transfer, data addition and data swap with respect to the memory cell array according to the internal processing operation command received from the external device.

13. The memory device of claim 1 , wherein, in a normal mode, the memory device is configured to receive a data transaction command from the external device through signal lines of a first channel performing a predetermined protocol between the external device and the memory device, and perform a data communication operation between the external device and the memory cell array according to the received data transaction command.

14. A method of operating a memory device comprising a memory cell array and a processor-in-memory (PIM) configured to perform an internal processing operation, the method comprising:

entering an internal processing mode under control of an external device;

performing, by the MI, the internal processing operation in the internal processing mode based on internal processing information stored in the memory cell array; and

in response to the PIM determining that the internal processing information comprises an internal processing operation command indicating a type of the internal processing operation, requesting, through dedicated pins, the internal processing operation from the external device and then receiving the internal processing operation command, based on the request, from the external device.

15. The method of claim 14 , wherein the internal processing operation command comprises an internal processing read command and an internal processing write command associated with the internal processing operation.

16. The method of claim 14 , further comprising:

receiving a command from the external device;

detecting whether the received command comprises the internal processing operation command; and

in response to determining that the received command comprises the internal processing operation command, performing a data communication operation between the memory cell array and the PIM according to the internal processing operation command.

17. The method of claim 14 , wherein the entering the internal processing mode under the control of the external device comprises receiving an internal processing mode signal instructing entry into the internal processing mode from the external device.

18. The method of claim 17 , wherein the internal processing mode signal is received through signal lines of a first channel performing a predetermined protocol between the external device and the memory device.

19. The method of claim 17 , wherein the internal processing mode signal is received through a dedicated signal line of a second channel between the external device and the memory device.

20. The method of claim 14 , further comprising:

generating a completion signal indicating completion of the internal processing operation performed; and

transmitting the completion signal to the external device through a dedicated signal line of a second channel between the external device and the memory device.

Assignments (2)
CORRECTIVE ASSIGNMENT TO CORRECT THE ADD THIRD INVENTOR PREVIOUSLY RECORDED AT REEL: 48061 FRAME: 690. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT. Recorded Mar 4, 2019
From: KASIBHATLA, PAVAN KUMAR; O, SEONG-IL; YU, HAK-SOO
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 048496/0262 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 18, 2019
From: KASIBHATLA, PAVAN KUMAR; O, SEONG-IL
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 048061/0690 →
Priority Claims (1)
KR 10-2018-0088682 · Jul 30, 2018 · national
Continuity (1)
Related Publication 20200035291A1 · Jan 30, 2020
Cited By (1)
US 12,204,988