Voltage-generating circuit and semiconductor device
What is provided is a voltage-generating circuit that uses dynamic reference voltage to accurately control the step-up of a generated voltage. A voltage-generating circuit 100 of the invention includes a charge pump 110 outputting voltage Vpump, a regulator 120 , and a controlling circuit 140 . The regulator 120 includes a comparator 122 and a comparator 132 . The comparator 122 compares voltage Vdivide generated by the charge pump 110 with a reference voltage Vref, and outputs a comparison result CMP_OUT. The comparator 132 compares voltage Vdivide 2 generated by the charge pump 110 with a reference voltage VrefRRC with a controlled rising speed, and outputs a comparison result CMP 2 _OUT. The controlling circuit 140 controls the charge pump 110 based on CMP_OUT and CMP 2 _OUT.
1. A voltage-generating circuit, comprising:
a voltage-generating part, to generate a voltage;
a regulator, electrically connected to the voltage-generating part; and
a controlling part, controlling the voltage-generating part based on an output from the regulator;
wherein the regulator comprises:
a comparator circuit, comparing the voltage generated by the voltage-generating part with a controlled reference voltage having a controlled rising speed; and
a generating circuit, delaying a reference voltage according to an RC time constant, and generating the controlled reference voltage;
wherein the regulator further comprises a second comparator circuit, comparing a second voltage generated by the voltage-generating part with the reference voltage, and outputting a comparison result to the controlling part;
wherein the controlling part restrains the operation of the voltage-generating part after the second voltage reaches the reference voltage.
2. The voltage-generating circuit as claimed in claim 1 ,
wherein the generating circuit comprises:
an input part, inputting the reference voltage; and
an RC circuit, connected to the input part.
3. The voltage-generating circuit as claimed in claim 2 ,
wherein the RC circuit comprises:
a resistor, connected to the reference voltage; and
a capacitor, connected in series with the resistor;
wherein the controlled reference voltage is output from a connected node of the resistor and the capacitor.
4. The voltage-generating circuit as claimed in claim 1 ,
wherein the voltage-generating part comprises a charge pump;
wherein the RC time constant is determined within a range that does not exceed a rising speed of an output voltage of the charge pump.
5. The voltage-generating circuit as claimed in claim 1 ,
wherein the controlling part restrains operation of the voltage-generating part in response to the comparator circuit detecting that a rising speed of the voltage generated by the voltage-generating part is faster than that of the controlled reference voltage.
6. The voltage-generating circuit as claimed in claim 1 ,
wherein the second comparator circuit includes a resistance voltage divider, and the resistance voltage divider comprises a variable resistor;
wherein the second voltage is set by the variable resistor.
7. The voltage-generating circuit as claimed in claim 6 ,
wherein a resistance of the variable resistor is set according to a trim code which is determined by operating status.
8. A semiconductor device, comprising:
the voltage-generating circuit as claimed in claim 1 .