Method for forming an organic electroluminescence (EL) element with annealing temperatures for different pixels
The present invention relates to a method for forming an organic EL element having at least one pixel type comprising at least three different layers including a hole injection layer (HIL), a hole transport layer (HTL) and an emission layer (EML), characterized in that the HIL, the HTL and the EML of at least one pixel type are obtained by depositing inks wherein the layers are annealed after said depositing steps in a first, second and third annealing step and the difference of the annealing temperature of the first and of the second annealing step is below 35° C., preferably below 30° C., more preferably below 25° C. and the annealing temperature of the third annealing step is no more than 5° C. above the annealing temperature of the first and/or the second annealing step, preferably the annealing temperature of the third annealing step is equal to or below the annealing temperature of the first and the second annealing step, wherein the first annealing step is performed before the second annealing step and the second annealing step is performed before the third annealing step.
1. A method for forming an organic electroluminescent (EL) element comprising at least two different pixel types including a first pixel type and a second pixel type, each comprising at least three different layers including a hole injection layer (HIL), a hole transport layer (HTL) and an emission layer (EML), wherein the HIL and the HTL of the first and the second pixel types and the EML of at least one pixel type are obtained by depositing an ink and at least one layer of both pixel types at the same time, annealing the HIL, HTL and EML in a first, second and third annealing step at a first, second or third annealing temperature, wherein the first annealing temperature and the second annealing temperature differ by less than 35° C., and the third annealing temperature is no more than 5° C. above the first and/or the second annealing temperature, wherein the first annealing step is performed before the second annealing step and the second annealing step is performed before the third annealing step.
2. The method according to claim 1 , wherein the annealing temperature of the first and of the second annealing step differ by less than 25° C.
3. The method according to claim 2 , wherein the ink to form the HIL comprises at least 50% by weight of one or more organic solvent.
4. The method according to claim 2 , wherein the EL element has three different pixel types including a first pixel type, a second pixel type and a third pixel type, and wherein the HTL of the second pixel type and the third pixel type are formed by depositing ink, drying and annealing at the same time wherein the annealing step is performed at an annealing temperature T2.
5. The method according to claim 1 , wherein the organic EL element has at least three different pixel types wherein the HIL and the HTL of all pixel types and the EML of at least one pixel type are obtained by depositing an ink and at least one layer of all pixel types is deposited by applying an ink at the same time.
6. The method according to claim 1 , wherein all pixel types include a HIL, and wherein the HIL of all pixel types is formed by depositing ink, drying and annealing at the same time, and wherein the annealing step is performed at an annealing temperature T1.
7. The method according to claim 1 , wherein the HTL of the first pixel type and the EML of the second pixel type are formed by depositing ink, drying and annealing at the same time wherein the annealing step is performed at an annealing temperature T3.
8. The method according to claim 1 , wherein the first annealing temperature is at least 180° C.
9. The method according to claim 1 , wherein the second annealing temperature is at least 180° C.
10. The method according to claim 1 , wherein the third annealing temperature is at least 120° C.
11. The method according to claim 1 , wherein the first annealing temperature is at most 250° C.
12. The method according to claim 1 , wherein the second annealing temperature is at most 250° C.
13. The method according to claim 1 , wherein the third annealing temperature is at most 200° C.
14. The method according to claim 1 , wherein at least one layer is crosslinked during the annealing step.
15. The method according to claim 1 , wherein in a first step a HIL is formed, in a second step a HTL is formed and in a third step a EML is formed wherein the HIL is formed before the HTL and the HTL is formed before the EML.
16. The method to claim 1 , comprising drying the ink before the annealing, and wherein drying is performed under reduced pressure.
17. The method according to claim 1 , wherein depositing comprises inkjet printing at least one layer.
18. The method according to claim 1 , further comprising depositing a common layer by vacuum deposition technique.
19. An electronic device, obtained by the method according to claim 1 .
20. The method according to claim 1 , wherein the annealing temperature of the third annealing step is equal to or below the annealing temperature of the first and the second annealing step.