Protective coating for electrostatic chucks
An ElectroStatic Chuck (ESC) including a chucking surface having at least a portion covered with a coating of silicon oxide (SiO 2 ), silicon nitride (Si 3 N 4 ) or a combination of both. The coating can be applied in situ a processing chamber of a substrate processing tool and periodically removed and re-applied in situ to create fresh coating.
1. A method, comprising:
(a) using a halogen-based cleaning agent to remove a first coating formed on an ElectroStatic Chuck (ESC) chucking surface of a pedestal in a processing chamber; and
(b) depositing a second coating formed on the ESC chucking surface of the pedestal in situ the processing chamber, wherein depositing the second coating comprises:
providing a plasma in the processing chamber, the plasma including a silicon precursor and a reactant; and
exposing the surfaces within the processing chamber and the ESC chucking surface to the plasma, the exposing resulting in the formation of the second coating on the surfaces of the processing chamber and the ESC chucking surface.
2. The method of claim 1 , further comprising repeating (a) and (b) so that the ESC chucking surface of the pedestal is refreshed each repeat with a new second coating.
3. The method of claim 2 , repeating (a) and (b) and the initiation of each repeat is determined by when a specified amount of deposition material has been deposited on one or more substrates while chucked to the ESC chucking surface of the pedestal in the processing chamber.
4. The method of claim 3 , wherein the processing chamber is a Chemical Vapor Processing chamber.
5. The method of claim 3 , wherein the processing chamber is an Atomic Layer Deposition (ALD) chamber.
6. The method of claim 1 , wherein the halogen-based cleaning agent is fluorine.
7. The method of claim 1 , wherein the first coating and the second coating are each selected from a group including: silicon oxide, silicon nitride or a combination of both silicon oxide and silicon nitride.
8. The method of claim 1 , wherein the second coating has a thickness ranging from 1.0 micron to 5.0 microns.
9. The method of claim 1 , wherein the second coating has a thickness ranging from 50 nanometers to 30 microns.
10. The method of claim 1 , wherein the ESC chucking surface of the pedestal is either a Coulombic type or a Johnsen-Rahbek type chucking surface.
11. The method of claim 1 , wherein the second coating is multi-layered.
12. A substrate processing tool, comprising:
a processing chamber;
an ElectroStatic Chuck (ESC) pedestal, having an ESC chucking surface for chucking a substrate, arranged within the processing chamber;
wherein the substrate processing tool is further arranged to implement a maintenance routine comprising:
(a) cleaning deposits formed on surfaces within the processing chamber and the ESC chucking surface using a cleaning agent provided in the processing chamber; and
(b) coating the surfaces within the processing chamber and the ESC chucking surface with either silicon oxide or silicon nitride following the cleaning, wherein coating the surfaces within the processing chamber and the ESC chucking surface further comprises:
providing a plasma in the processing chamber, the plasma including a silicon precursor and a reactant; and
exposing the surfaces within the processing chamber and the ESC chucking surface to the plasma, the exposing resulting in the formation of the coating on the surfaces of the processing chamber and the ESC chucking surface, and
wherein the cleaning and the coating of the ESC chucking surface is performed in situ the processing chamber while the surfaces within the processing chamber are cleaned and coated respectively.
13. The substrate processing tool of claim 12 , wherein the ESC is either a Coulombic type or a Johnsen-Rahbek (J-R) type ESC.
14. The substrate processing tool of claim 12 , wherein the coating on the ESC chucking surface has a thickness ranging from 1.0 micron to 5.0 microns.
15. The substrate processing tool of claim 12 , wherein the coating on the ESC chucking surface has a thickness ranging from 50 nanometers to 30 microns.
16. The substrate processing tool of claim 12 , wherein the coating on the ESC chucking surface is multi-layered.
17. The substrate processing tool of claim 12 , wherein the processing chamber is a Chemical Vapor Processing chamber.
18. The substrate processing tool of claim 12 , wherein the processing chamber is an Atomic Layer Deposition (ALD) chamber.
19. The substrate processing tool of claim 12 , wherein the cleaning agent is a halogen-based cleaning including fluorine.
20. The substrate processing tool of claim 12 , wherein the plasma is provided by either:
generating the plasma remotely and supplying the plasma to the processing chamber; or
generating the plasma within the processing chamber.
21. The substrate processing tool of claim 12 , further arranged to periodically repeat (a) and (b) so that a new coating of either silicon oxide or silicon nitride is formed on the ESC chucking surface in situ the processing chamber following each repeat respectively.