Semiconductor device and method
In an embodiment, a method includes: forming a first fin extending from a substrate, the substrate including silicon, the first fin including silicon germanium; forming an isolation region around the first fin, an oxide layer being formed on the first fin during formation of the isolation region; removing the oxide layer from the first fin with a hydrogen-based etching process, silicon at a surface of the first fin being terminated with hydrogen after the hydrogen-based etching process; desorbing the hydrogen from the silicon at the surface of the first fin to depassivate the silicon; and exchanging the depassivated silicon at the surface of the first fin with germanium at a subsurface of the first fin.
1. A method comprising:
forming a first fin extending from a substrate, the substrate comprising silicon, the first fin comprising silicon germanium;
forming an isolation region around the first fin, an oxide layer being formed on the first fin during formation of the isolation region;
removing the oxide layer from the first fin with a hydrogen-based etching process, silicon at a surface of the first fin being terminated with hydrogen after the hydrogen-based etching process;
desorbing the hydrogen from the silicon at the surface of the first fin to depassivate the silicon; and
exchanging the depassivated silicon at the surface of the first fin with germanium at a subsurface of the first fin.
2. The method of claim 1 , wherein desorbing the hydrogen and exchanging the silicon are performed with a thermal treatment process.
3. The method of claim 2 , wherein the thermal treatment process comprises:
placing the first fin in a hydrogen-starved environment;
annealing the first fin until the silicon germanium of the first fin is at sorption equilibrium; and
removing the desorbed hydrogen from the hydrogen-starved environment while the silicon germanium of the first fin is at sorption equilibrium.
4. The method of claim 3 , wherein the hydrogen-starved environment includes nitrogen, helium, or argon.
5. The method of claim 3 , wherein the hydrogen-starved environment is a vacuum.
6. The method of claim 3 , wherein annealing the first fin comprises annealing the first fin at a temperature in a range of 250° C. to 500° C., and for a duration of less than 60 minutes.
7. The method of claim 2 further comprising:
forming a second fin extending from the substrate, the second fin comprising silicon, wherein the second fin is exposed to the thermal treatment process, a material composition of the second fin remaining unmodified during the thermal treatment process.
8. A method comprising:
forming a first fin and a second fin extending from a substrate, the first fin comprising silicon germanium, the second fin comprising silicon;
forming an oxide layer on the first fin and the second fin;
removing the oxide layer from the first fin and the second fin with a hydrogen-based etching process, a surface of the first fin and a surface of the second fin being terminated with hydrogen after the hydrogen-based etching process;
condensing germanium at the surface of the first fin with a hydrogen desorbing process to form a germanium-rich layer at the surface of the first fin, a material composition of a subsurface of the second fin remaining unmodified during the hydrogen desorbing process; and
forming a metal gate stack over the first fin, the metal gate stack extending along the germanium-rich layer of the first fin.
9. The method of claim 8 , wherein no mask layers are formed over the second fin during the hydrogen desorbing process such that the second fin is exposed to the hydrogen desorbing process.
10. The method of claim 8 further comprising:
after condensing the germanium at the surface of the first fin, forming a dummy gate stack over the first fin;
forming source/drain regions in the first fin, the source/drain regions being adjacent the dummy gate stack;
removing the dummy gate stack to expose the germanium-rich layer at the surface of the first fin; and
forming the metal gate stack in place of the dummy gate stack.
11. The method of claim 10 further comprising:
after condensing the germanium at the surface of the first fin, forming lightly doped source/drain (LDD) regions in the first fin, upper portions of the LDD regions having a higher germanium concentration than lower portions of the LDD regions.
12. The method of claim 10 further comprising:
after condensing the germanium at the surface of the first fin, forming gate spacers adjacent the metal gate stack, the gate spacers extending along the germanium-rich layer of the first fin.
13. The method of claim 8 further comprising:
forming a dummy gate stack over the first fin;
forming source/drain regions in the first fin, the source/drain regions being adjacent the dummy gate stack;
before condensing germanium at the surface of the first fin, removing the dummy gate stack; and
after condensing the germanium at the surface of the first fin, forming the metal gate stack in place of the dummy gate stack.
14. The method of claim 13 further comprising:
before condensing the germanium at the surface of the first fin, forming lightly doped source/drain (LDD) regions in the first fin, upper portions of the LDD regions having a same germanium concentration as lower portions of the LDD regions.
15. The method of claim 13 further comprising:
before condensing the germanium at the surface of the first fin, forming gate spacers adjacent the metal gate stack, the gate spacers extending along a portion of the first fin that is substantially free from the germanium-rich layer.
16. The method of claim 8 further comprising:
after condensing the germanium at the surface of the first fin, growing a first protective cap on the first fin and a second protective cap on the second fin.
17. The method of claim 16 , wherein forming the metal gate stack over the first fin comprises:
forming an opening extending through the first protective cap; and
forming the metal gate stack in the opening of the first protective cap.
18. A method comprising:
forming an oxide layer on a first fin and a second fin, the first fin comprising silicon germanium, the second fin comprising silicon;
removing the oxide layer from the first fin and the second fin with a hydrogen-based etching process, a first surface of the first fin and a second surface of the second fin being terminated with hydrogen after the hydrogen-based etching process;
performing a germanium condensation process to desorb the hydrogen from the first surface of the first fin and the second surface of the second fin, and to condense germanium at the first surface of the first fin but not the second surface of the second fin;
after the germanium condensation process, growing a first protective cap on the first fin and a second protective cap on the second fin;
forming a first dummy gate on the first protective cap and a second dummy gate on the second protective cap;
replacing the first dummy gate and a first portion of the first protective cap with a first metal gate; and
replacing the second dummy gate and a second portion of the second protective cap with a second metal gate.
19. The method of claim 18 , wherein the germanium condensation process comprises annealing the first fin and the second fin in a hydrogen-starved environment, at a temperature in a range of 250° C. to 500° C., and for a duration of less than 60 minutes.
20. The method of claim 18 further comprising:
forming first gate spacers on the first protective cap and second gate spacers on the second protective cap, the first gate spacers adjacent the first dummy gate, the second gate spacers adjacent the second dummy gate.