Semiconductor device and method for manufacturing same
A multi-finger transistor including plural control electrodes ( 2 ), plural first electrodes ( 3 ), and plural second electrodes ( 4 ) is provided on a semiconductor substrate ( 1 ). A resin film ( 14,15 ) covers the transistor. A first wiring ( 8 ) electrically connecting the plural first electrodes ( 3 ) to one other is provided on the resin film ( 14,15 ). The resin film ( 14,15 ) covers contact portions between the first wiring ( 8 ) and the plural first electrodes ( 3 ). A first hollow structure ( 16 ) sealed with the resin film ( 14,15 ) is provided around the plural control electrodes ( 2 ) and the plural second electrodes ( 4 ).
1. A semiconductor device comprising:
a semiconductor substrate;
a multi-finger transistor including plural control electrodes, plural first electrodes, and plural second electrodes provided on the semiconductor substrate;
a first resin film formed on the semiconductor substrate;
a second resin film covering the multi-finger transistor and contacting the first resin film; and
a first wiring provided on the second resin film and electrically connecting the plural first electrodes to one other, wherein
the first resin film covers part of contact portions between the first wiring and the plural first electrodes which is formed on a region of the multi-finger transistor, and
a first hollow structure sealed with the second resin film is provided around the plural control electrodes and one of the plural second electrodes, wherein
the second resin film defines an upper surface of the first hollow structure.
2. The semiconductor device according to claim 1 , further comprising
a second wiring provided on the semiconductor substrate, covered with the second resin film, and electrically connecting the plural control electrodes to one other, wherein
a second hollow structure sealed with the second resin film is provided at an intersection portion of the first wiring and the second wiring.
3. The semiconductor device according to claim 1 , wherein
the first wiring is provided above the plural control electrodes and the plural second electrodes.
4. The semiconductor device according to claim 3 , further comprising
a lower layer wiring covered with the second resin film, and an upper layer wiring provided on the second resin film, wherein
a second hollow structure sealed with the second resin film is provided at an intersection portion of the lower layer wiring and the upper layer wiring.
5. The semiconductor device according to claim 4 , further comprising
a support pole supporting the second resin film and provided inside the second hollow structure.