Selective deposition method to form air gaps

1. A method of forming an air gap for a semiconductor device through selective deposition comprising:

providing a substrate for processing in a reaction chamber;

forming a first surface overlying the substrate for selectively depositing a film, wherein the first surface comprises a first substantially vertical portion;

forming a second surface, wherein the second surface comprises a second substantially vertical portion; and

selectively depositing the film at least on the first substantially vertical portion of the first surface relative to the second substantially vertical portion, wherein a portion of the film at least partially defines the air gap.

2. The method of claim 1 , further comprising forming a third surface and forming a fourth surface, wherein the third surface comprises the same material as the first surface, wherein the fourth surface comprises the same material as the second surface, and wherein the deposition is selective on third surface relative to the deposition the fourth surface.

3. The method of claim 2 , wherein both the third and the fourth surfaces comprise substantially vertical portions and selectively depositing the film comprises deposition on the said first and third vertical surfaces.

4. The method of claim 1 , wherein the step of selectively depositing the film substantially closes the air gap.

5. The method of claim 1 , further comprising:

forming a dielectric layer at least on top of the film, wherein the dielectric layer defines a portion of the air gap.

6. The method of claim 5 , wherein the step of forming the dielectric layer comprises a non-conformal deposition process.

7. The method of claim 2 , wherein the step of selectively depositing the film is performed such that the film grows horizontally from the first substantially vertical portion toward the third substantially vertical portion.

8. The method of claim 1 , wherein the step of selectively depositing the film comprises chemical vapor deposition.

9. The method of claim 1 , wherein the thickness of the film is greater than 10 nm.

10. The method of claim 1 , wherein the selectivity of deposition of the film on the first substantially vertical portion of the first surface relative to the second substantially vertical portion is greater than 80%.

11. The method of claim 1 , wherein the air gap is part of an integrated circuit and has a performance similar to dielectric material with k-value of less than 3.6.

12. The method of claim 1 , wherein the air gap is part of an integrated circuit and size of the air gap is more than 35% of the space between metallization lines.

13. The method of claim 1 , wherein the film comprises a low-k material.

14. The method of claim 1 , wherein the film comprises an insulating material.

15. The method of claim 1 , wherein the first surface comprises metal and the second surface comprises silicon.

16. The method of claim 1 , wherein the step of selectively depositing the film comprises:

pulsing a metal halide precursor on the first substantially vertical surface;

pulsing an oxygen precursor on the first substantially vertical surface; and

repeating the pulsing steps until the film grows to a desired thickness.

17. The method of claim 16 , wherein the metal halide precursor comprises one or more of NbCl 5 and TaCl 5 .

18. The method of claim 16 , wherein the oxygen precursor comprises at least one of: water (H 2 O), oxygen (O 2 ), ozone (O 3 ), hydrogen peroxide (H 2 O 2 ), atomic oxygen (O), oxygen radicals, and oxygen plasma.

19. The method of claim 16 , wherein a temperature of the reaction chamber ranges between 20 and 600° C.

20. The method of claim 1 , wherein a portion of the first surface comprises a liner.