Interconnection structure of selective deposition process
Embodiments of the present disclosure generally relate an interconnect structure formed on a substrate and a method of forming the interconnect structure thereon. In one embodiment, a method of forming an interconnect structure includes forming an opening comprising a via and a trench in an insulating structure formed on a substrate, forming a first passivation layer in the opening, removing a portion of the first passivation layer from the opening, and selectively depositing a first metal containing material in the via.
1. A method of forming an interconnect structure, comprising:
forming an opening comprising a via and a trench in an insulating structure having a top surface and sidewalls, the insulating structure formed on a substrate;
forming a first passivation layer in the opening, the first passivation layer formed over the top surface and sidewalls;
removing a portion of the first passivation layer from the top surface; and
selectively depositing a first metal containing material in the via, the first metal in contact with first passivation layer.
2. The method of claim 1 , further comprising:
forming a second metal containing material in the trench in contact with the first metal containing material.
3. The method of claim 1 , wherein forming the first passivation layer further comprises:
supplying a gas mixture containing at least one of a silicon containing gas, nitrogen containing gas and a carbon containing gas to form the first passivation layer on the substrate.
4. The method of claim 3 , wherein the first passivation layer is a oxide layer, a nitride layer or a methyl group containing layer.
5. The method of claim 1 , wherein the first metal containing material is formed by an atomic layer deposition process.
6. The method of claim 2 , wherein the first metal containing material is different from the second metal containing material.
7. The method of claim 1 , wherein the first metal containing material is selected from a group consisting of Co, W, Ru and Al.
8. The method of claim 2 , wherein the second metal containing material is copper.
9. The method of claim 2 , wherein the second metal containing material is formed by a physical vapor deposition process.
10. The method of claim 1 , wherein removing the portion of the first passivation layer further comprises:
removing the first passivation layer above an underlying conductive layer formed in the substrate.
11. The method of claim 10 , wherein the first metal containing material is formed on and in contact with the underlying conductive layer.
12. A method of forming an interconnect structure, comprising:
forming an opening comprising a via and a trench in an insulating structure formed on a substrate;
forming a first passivation layer in the opening;
removing a portion of the first passivation layer from the opening;
selectively depositing a first metal containing material in the via; and
forming a second passivation layer in the opening covering the first metal containing material.
13. The method of claim 12 , wherein the first passivation layer and the second passivation layer are formed from the same material.
14. The method of claim 13 , wherein removing the portion of the first passivation layer from the opening further comprises:
leaving the first passivation layer on sidewalls of the opening.
15. The method of claim 12 , further comprising:
removing a portion of the second passivation layer from the opening to expose a surface of the first metal containing material.
16. A method of forming an interconnect structure, comprising:
forming a first passivation layer in an opening formed in an insulating structure having a top surface and sidewalls, the insulating structure formed on a substrate, the first passivation layer formed over the top surface and sidewalls, wherein the opening comprises a trench formed on a via in the insulating structure, and wherein the first passivation layer is an oxide layer, a nitride layer or a methyl group containing layer;
selectively depositing a first metal containing material in the via, the first metal in contact with first passivation layer; and
forming a second metal containing material in the trench in contact with the first metal containing material.
17. The method of claim 16 , wherein the first metal containing material is different from the second metal containing material.
18. The method of claim 16 , wherein the first metal containing material is selected from a group consisting of Co, W, Ru and Al.
19. The method of claim 16 , wherein the second metal containing material is copper.
20. An interconnect structure comprising:
an insulating structure comprising a top surface and sidewalls, the insulating structure formed on a substrate having an opening comprising a via and a trench formed therein;
a passivation layer formed on a sidewall of the insulating structure, wherein the passivation layer is an oxide layer, a nitride layer or a methyl group containing layer;
a first metal containing material formed in the via, the first metal in contact with first passivation layer; and
a second metal containing material formed in the trench, wherein the first metal containing material is different from the second metal containing material.