Semiconductor apparatus including leads and bonding wires
A semiconductor device, a drain electrode terminal supporting the semiconductor device and connected directly to a drain electrode pad, a source electrode terminal connected to a source electrode pad, and a gate electrode terminal are provided, wherein the source electrode terminal includes a wire post, a first lead extending from one end of the wire post, and a second lead extending from another end of the wire post, wherein the source electrode pad and the wire post of the source electrode terminal are connected to each other through a plurality of bonding wires, and wherein the semiconductor device, a surface, supporting the semiconductor device thereon, of the drain electrode terminal, the wire post of the source electrode terminal, the bonding wires, and part of the gate electrode terminal are covered with a mold resin.
1. A semiconductor apparatus, comprising:
a semiconductor device having a drain electrode pad formed on a first surface thereof, and having a source electrode pad and a gate electrode pad formed on a second surface thereof opposite the first surface,
a drain electrode terminal supporting the semiconductor device at the first surface, and connected directly to the drain electrode pad,
a source electrode terminal connected to the source electrode pad of the semiconductor device, and
a gate electrode terminal connected to the gate electrode pad of the semiconductor device,
wherein the source electrode terminal includes a wire post, a first lead extending from one end of the wire post, and a second lead extending from another end of the wire post,
wherein the source electrode pad of the semiconductor device and the wire post of the source electrode terminal are connected to each other through a plurality of bonding wires,
wherein the semiconductor device, a surface, supporting the semiconductor device thereon, of the drain electrode terminal, the wire post of the source electrode terminal, the bonding wires, and part of the gate electrode terminal are covered with a mold resin, and
wherein the drain electrode terminal is disposed on a different side from where the source electrode terminal and the gate electrode terminal are disposed.
2. The semiconductor device as claimed in claim 1 , wherein the drain electrode terminal is disposed on an opposite side from where the source electrode terminal and the gate electrode terminal are disposed.
3. The semiconductor apparatus as claimed in claim 1 , wherein the wire post has no holes.
4. The semiconductor apparatus as claimed in claim 1 , further comprising a source sense terminal connected to the source electrode pad of the semiconductor device.
5. The semiconductor apparatus as claimed in claim 1 , wherein a length L of the wire post of the source electrode terminal in a longitudinal direction thereof and a width W of the semiconductor device in the longitudinal direction are such that 40%≤L/W≤90%.
6. The semiconductor apparatus as claimed in claim 1 , wherein a number of the plurality of bonding wires connecting the source electrode pad of the semiconductor device and the wire post of the source electrode terminal is greater than or equal to 5 and less than or equal to 20.
7. The semiconductor apparatus as claimed in claim 1 , wherein a protrusion is provided on a lateral face of the drain electrode terminal to extend from the lateral face of the drain electrode terminal, and
wherein the protrusion is situated on a same side of the lateral face of the drain electrode terminal as a surface, supporting the semiconductor device thereon, of the drain electrode terminal.
8. The semiconductor apparatus as claimed in claim 1 , wherein a protrusion is provided on a lateral face of the wire post to extend from the lateral face of the wire post, and
wherein the protrusion is situated on an opposite side of the lateral face from a surface connected to the plurality of bonding wires.
9. The semiconductor apparatus as claimed in claim 1 , wherein the semiconductor device is made of a material containing SiC.
10. A semiconductor apparatus, comprising:
a semiconductor device having a drain electrode pad formed on a first surface thereof, and having a source electrode pad and a gate electrode pad formed on a second surface thereof opposite the first surface,
a drain electrode terminal supporting the semiconductor device at the first surface, and connected directly to the drain electrode pad,
a source electrode terminal connected to the source electrode pad of the semiconductor device, and
a gate electrode terminal connected to the gate electrode pad of the semiconductor device,
wherein the source electrode terminal includes a wire post, a first lead extending from one end of the wire post, and a second lead extending from another end of the wire post,
wherein the source electrode pad of the semiconductor device and the wire post of the source electrode terminal are connected to each other through a plurality of bonding wires,
wherein the semiconductor device, a surface, supporting the semiconductor device thereon, of the drain electrode terminal, the wire post of the source electrode terminal, the bonding wires, and part of the gate electrode terminal are covered with a mold resin,
wherein the drain electrode terminal is disposed on an opposite side from where the source electrode terminal and the gate electrode terminal are disposed,
wherein a protrusion is provided on a lateral face of the drain electrode terminal to extend from the lateral face of the drain electrode terminal,
wherein the protrusion is situated on a same side of the lateral face of the drain electrode terminal as a surface, supporting the semiconductor device thereon, of the drain electrode terminal,
wherein a protrusion is provided on a lateral face of the wire post to extend from the lateral face of the wire post, and
wherein the protrusion is situated on an opposite side of the lateral face from a surface connected to the bonding wires.
11. A semiconductor apparatus, comprising:
a semiconductor device having a drain electrode pad formed on a first surface thereof, and having a source electrode pad and a gate electrode pad formed on a second surface thereof opposite the first surface,
a drain electrode terminal supporting the semiconductor device at the first surface, and connected directly to the drain electrode pad,
a source electrode terminal connected to the source electrode pad of the semiconductor device, and
a gate electrode terminal connected to the gate electrode pad of the semiconductor device,
wherein the source electrode terminal includes a wire post, a first lead extending from one end of the wire post, and a second lead extending from another end of the wire post,
wherein the source electrode pad of the semiconductor device and the wire post of the source electrode terminal are connected to each other through a plurality of bonding wires,
wherein the semiconductor device, a surface, supporting the semiconductor device thereon, of the drain electrode terminal, the wire post of the source electrode terminal, the bonding wires, and part of the gate electrode terminal are covered with a mold resin,
wherein a protrusion is provided on a lateral face of the wire post to extend from the lateral face of the wire post, and
wherein the protrusion is situated on an opposite side of the lateral face from a surface connected to the plurality of bonding wires.
12. The semiconductor device as claimed in claim 11 , wherein the drain electrode terminal is disposed on an opposite side from where the source electrode terminal and the gate electrode terminal are disposed.
13. The semiconductor apparatus as claimed in claim 11 , wherein the wire post has no holes.
14. The semiconductor apparatus as claimed in claim 11 , further comprising a source sense terminal connected to the source electrode pad of the semiconductor device.
15. The semiconductor apparatus as claimed in claim 11 , wherein a length L of the wire post of the source electrode terminal in a longitudinal direction thereof and a width W of the semiconductor device in the longitudinal direction are such that 40%≤L/W≤90%.
16. The semiconductor apparatus as claimed in claim 11 , wherein a number of the plurality of bonding wires connecting the source electrode pad of the semiconductor device and the wire post of the source electrode terminal is greater than or equal to 5 and less than or equal to 20.
17. The semiconductor apparatus as claimed in claim 11 , wherein a protrusion is provided on a lateral face of the drain electrode terminal to extend from the lateral face of the drain electrode terminal, and
wherein the protrusion is situated on a same side of the lateral face of the drain electrode terminal as a surface, supporting the semiconductor device thereon, of the drain electrode terminal.
18. The semiconductor apparatus as claimed in claim 11 , wherein a protrusion is provided on a lateral face of the wire post to extend from the lateral face of the wire post, and
wherein the protrusion is situated on an opposite side of the lateral face from a surface connected to the plurality of bonding wires.
19. The semiconductor apparatus as claimed in claim 11 , wherein the semiconductor device is made of a material containing SiC.