Wafer level molded PPGA (pad post grid array) for low cost package
A method to fabricate a land grid array wafer level chip scale package is described. A silicon die is provided. A dielectric layer is deposited on the silicon die. An opening is etched through the dielectric layer to a metal pad on the silicon die. At least one redistribution layer is formed over the dielectric layer and contacting the metal pad. At least one copper post is formed on the at least one redistribution layer and forms a land grid array. The wafer is sawed partially through on scribe lines to form cuts exposing sides of the silicon die. Thereafter, a molding compound is applied over the at least one redistribution layer and in the cuts wherein the molding compound encapsulates top and side surfaces of the silicon die.
1. A method of fabricating a land grid array wafer level chip scale package comprising:
providing at least one silicon die on a wafer;
depositing a dielectric layer on said silicon die;
etching an opening through said dielectric layer to a metal pad on said silicon die;
forming at least one redistribution layer over said dielectric layer and contacting said metal pad;
forming at least one copper post on said at least one redistribution layer forming said land grid array;
cutting said wafer partially through on scribe lines to form cuts exposing sides of said silicon die;
thereafter applying a molding compound over said at least one redistribution layer and in said cuts wherein said molding compound encapsulates top and side surfaces of said silicon die; and
thereafter cutting sais wafer all the way through on said scribe lines, thereby singulating said wafer to form packages.
2. The method according to claim 1 wherein said applying said molding compound comprises:
compression molding using a mold granular epoxy resin material with a fine filler;
curing; and
post-curing said mold material.
3. The method according to claim 1 further comprising:
lapping said wafer to expose said at least one copper post; and
forming an oxidation preventing layer on exposed said at least one copper post.
4. The method according to claim 3 wherein said oxidation preventing layer comprises organic solderability preservatives (OSP), immersion tin (IT), or electroplated gold coated, printed, or plated onto said exposed at least one copper post.
5. The method according to claim 1 further comprising:
thinning a backside of said wafer prior to said singulating said wafer to form packages.
6. The method according to claim 5 further comprising laminating a backside protection film onto thinned said backside of said wafer prior to said singulating step.
7. The method according to claim 6 wherein said backside protection film comprises epoxy.
8. The method according to claim 1 further comprising:
providing at least one pad on a printed circuit board
applying solder paste on said at least one pad; and
surface mounting said at least one copper post of said wafer level chip scale package to said at least one pad on said printed circuit board via said solder paste.
9. The method according to claim 1 further comprising:
providing at least one pad on a printed circuit board applying solder paste on said at least one pad; and
surface mounting said at least one copper post of said wafer level chip scale package to said at least one pad on said printed circuit board via said solder paste.
10. A method of fabricating a land grid array wafer level chip scale package comprising:
providing at least one silicon die on a wafer;
depositing a dielectric layer on said silicon die;
etching an opening through said dielectric layer to a metal pad on said silicon die;
forming at least one redistribution layer over said dielectric layer and contacting said metal pad;
forming at least one copper post on said at least one redistribution layer forming a land grid array;
cutting said wafer partially through on scribe lines to form cuts exposing sides of said silicon die;
thereafter applying a molding compound over said at least one redistribution layer and in said cuts wherein said molding compound encapsulates top and side surfaces of said silicon die;
thereafter lapping said wafer to expose said at least one copper post;
forming an oxidation preventing layer on exposed said at least one copper post; and
thereafter cutting said wafer all the way through on said scribe lines, thereby singulating said wafer to form packages.
11. The method according to claim 10 wherein said applying said molding compound comprises:
compression molding using a mold granular epoxy resin material with a fine filler;
curing; and
post-curing said mold material.
12. The method according to claim 10 wherein said oxidation preventing layer comprises organic solderability preservatives (OSP), immersion tin (IT), or electroplated gold coated, printed, or plated onto said exposed at least one copper post.
13. The method according to claim 10 further comprising:
thinning a backside of said wafer prior to said singulating said wafer to form packages.
14. The method according to claim 13 further comprising laminating a backside protection film onto thinned said backside of said wafer prior to said singulating step.
15. The method according to claim 14 wherein said backside protection film comprises epoxy.