Structure and formation method of semiconductor device with magnetic element covered by polymer material
A structure and a formation method of a semiconductor device are provided. The method includes forming a passivation layer over a semiconductor substrate. The method also includes forming a magnetic element over the passivation layer. The method further includes forming an isolation layer over the magnetic element and the passivation layer. The isolation layer includes a polymer material. In addition, the method includes forming a conductive line over the isolation layer, and the conductive line extends across the magnetic element.
1. A method for forming a semiconductor device structure, comprising:
forming a passivation layer over a semiconductor substrate;
forming a magnetic element over the passivation layer;
forming an isolation layer over the magnetic element and the passivation layer, wherein the isolation layer comprises a polymer material; and
forming a conductive line over the isolation layer, wherein the conductive line extends across the magnetic element.
2. The method for forming a semiconductor device structure as claimed in claim 1 , further comprising patterning the isolation layer to expose a pad structure below the isolation layer.
3. The method for forming a semiconductor device structure as claimed in claim 2 , wherein an entirety of a top surface of the magnetic element is covered by the isolation layer after patterning the isolation layer to expose the pad structure.
4. The method for forming a semiconductor device structure as claimed in claim 2 , further comprising curing the isolation layer after the patterning of the isolation layer and before the formation of the conductive line.
5. The method for forming a semiconductor device structure as claimed in claim 1 , wherein the isolation layer is formed directly on the magnetic element and the passivation layer to cover the magnetic element.
6. The method for forming a semiconductor device structure as claimed in claim 1 , wherein the passivation layer comprises a second polymer material.
7. The method for forming a semiconductor device structure as claimed in claim 1 , wherein both the isolation layer and the passivation layer comprise polyimide.
8. The method for forming a semiconductor device structure as claimed in claim 1 , wherein the formation of the magnetic element comprises:
forming a plurality of magnetic layers over the passivation layer;
forming a patterned mask layer over the magnetic layers; and
wet etching the magnetic layers to partially remove the magnetic layers, wherein remaining portions of the magnetic layers form the magnetic element.
9. The method for forming a semiconductor device structure as claimed in claim 8 , further comprising:
forming a mask element to partially cover a top surface of the magnetic element; and
partially removing the magnetic element using a dry etching process to remove voids from sidewalls of the magnetic element.
10. The method for forming a semiconductor device structure as claimed in claim 8 , wherein a lower magnetic layer of the plurality of magnetic layers is wider than an upper magnetic layer of the plurality of magnetic layers.
11. A method for forming a semiconductor device structure, comprising:
forming a first polymer layer over a semiconductor substrate;
forming a magnetic element over the first polymer layer;
forming a second polymer layer over the first polymer layer to cover the magnetic element; and
forming a conductive line over the second polymer layer, wherein the conductive line extends across the magnetic element.
12. The method for forming a semiconductor device structure as claimed in claim 11 , wherein each of the first polymer layer and the second polymer layer comprises polyimide.
13. The method for forming a semiconductor device structure as claimed in claim 11 , further comprising partially removing the second polymer layer to expose a pad structure below the second polymer layer.
14. The method for forming a semiconductor device structure as claimed in claim 13 , further comprising curing the second polymer layer after the partial removal of the second polymer layer and before the formation of the conductive line.
15. The method for forming a semiconductor device structure as claimed in claim 11 , wherein the second polymer layer is formed directly on the magnetic element using a spin coating process.
16. A method for forming a semiconductor device structure, comprising:
forming a magnetic element over a semiconductor substrate;
forming an isolation layer over the magnetic element and the semiconductor substrate, wherein the isolation layer comprises a polymer material; and
forming a conductive line over the isolation layer, wherein the conductive line extends exceeding edges of the magnetic element.
17. The method for forming a semiconductor device structure as claimed in claim 16 , further comprising partially removing the isolation layer before the conductive line is formed.
18. The method for forming a semiconductor device structure as claimed in claim 17 , further comprising curing the isolation layer after the isolation layer is partially removed and before the conductive line is formed.
19. The method for forming a semiconductor device structure as claimed in claim 16 , wherein the isolation layer is formed directly on the magnetic element.
20. The method for forming a semiconductor device structure as claimed in claim 16 , wherein the formation of the magnetic element comprises:
forming a plurality of magnetic layers over the semiconductor substrate;
forming a patterned mask layer over the magnetic layers; and
wet etching the magnetic layers to partially remove the magnetic layers, wherein remaining portions of the magnetic layers form the magnetic element.