Comparator, solid-state imaging device, electronic apparatus, and driving method
A comparator includes: a first amplifying unit that includes a differential pair configured with a pair of transistors which are first and second transistors, and amplifies a difference of signals input to each of the gate electrodes of the first and second transistors, to output; a second amplifying unit that amplifies the signal output from the first amplifying unit; a third transistor that connects the first transistor to a power source voltage; a fourth transistor that connects the second transistor to the power source voltage; a fifth transistor that connects a connection point of gate electrodes of the third transistor and the fourth transistor to a drain of the third transistor; and a sixth transistor that connects a connection point of gate electrodes of the third transistor and the fourth transistor to a drain of the fourth transistor.
1. An imaging device comprising:
a first transistor, the first transistor is of a first conductivity type;
a second transistor, the second transistor is of the first conductivity type;
a third transistor, the third transistor is of the first conductivity type; and
a fourth transistor, the fourth transistor is of the first conductivity type,
wherein a gate of the first transistor is wired directly to a gate of the second transistor, a drain of the third transistor and a drain of the fourth transistor.
2. The imaging device according to claim 1 , wherein the first conductivity type is P-type.
3. The imaging device according to claim 1 , further comprising:
a fifth transistor, the fifth transistor is of a second conductivity type,
wherein a drain of the fifth transistor is wired directly to a drain of the first transistor and a source of the third transistor.
4. The imaging device according to claim 3 , wherein the second conductivity type is opposite to the first conductivity type.
5. The imaging device according to claim 3 , wherein the second conductivity type is N-type.
6. The imaging device according to claim 3 , further comprising:
a sixth transistor, the sixth transistor is of the second conductivity type,
wherein a source of the sixth transistor is wired directly to the source of the third transistor and the drain of the fifth transistor.
7. The imaging device according to claim 6 , wherein a gate of the fifth transistor is wired directly to a drain of the sixth transistor.
8. The imaging device according to claim 6 , further comprising:
a seventh transistor, the seventh transistor is of the second conductivity type,
wherein a drain of the seventh transistor is wired directly to the drain of the second transistor and a source of the fourth transistor.
9. The imaging device according to claim 8 , wherein a source of the seventh transistor is wired directly to a source of the fifth transistor.
10. The imaging device according to claim 9 , further comprising:
a current source wired directly to the source of the seventh transistor and the source of the fifth transistor.
11. The imaging device according to claim 10 , wherein the current source is wired between ground and the source of the fifth transistor.
12. The imaging device according to claim 8 , further comprising:
an eighth transistor, the eighth transistor is of the first conductivity type,
wherein a gate of the eighth transistor is wired directly to the drain of the second transistor and the source of the fourth transistor.
13. The imaging device according to claim 12 , wherein a drain of the eighth transistor is wired directly to the source of the first transistor and the source of the second transistor.
14. The imaging device according to claim 12 , further comprising:
a ninth transistor, the ninth transistor is of the second conductivity type,
wherein a drain of the ninth transistor is wired directly to the source of the eighth transistor.
15. The imaging device according to claim 14 , further comprising:
a tenth transistor, the tenth transistor is of the second conductivity type,
wherein a gate of the tenth transistor is wired directly to the source of the ninth transistor.
16. The imaging device according to claim 15 , wherein a drain of the tenth transistor is wired directly to the drain of the ninth transistor and the source of the eighth transistor.
17. The imaging device according to claim 15 , further comprising:
a condenser, an electrode of the condenser is wired directly to the source of the ninth transistor and the gate of the tenth transistor.
18. The imaging device according to claim 15 , further comprising:
an eleventh transistor, the eleventh transistor is of the first conductivity type,
wherein a gate of the eleventh transistor is wired directly to the gate of the fifth transistor and the drain of the sixth transistor.
19. The imaging device according to claim 18 , further comprising:
a twelfth transistor, the twelfth transistor is of the first conductivity type,
wherein a gate of the twelfth transistor is wired directly to the source of the fourth transistor and the gate of the eighth transistor.
20. An electronic apparatus comprising:
an optical system; and
the imaging device according to claim 1 .