Gap fill deposition process
Methods for forming an interconnections structure on a substrate in a cluster processing system and thermal processing such interconnections structure are provided. In one embodiment, a method for a device structure for semiconductor devices includes forming a barrier layer in an opening formed in a material layer disposed on a substrate, forming an interface layer on the barrier layer, forming a gap filling layer on the interface layer, and performing an annealing process on the substrate, wherein the annealing process is performed at a pressure range greater than 5 bar.
1. A method for forming a device structure for semiconductor device, comprising:
forming a barrier layer in an opening formed in a material layer disposed on a substrate, wherein a width of the opening is less than 20 nm;
performing a first plasma treatment process on the barrier layer;
forming an interface layer on the barrier layer after performing the first plasma treatment process, wherein a thickness of the interface layer is in a range of about 0.3 nm to about 3 nm;
forming a gap filling layer on the interface layer; and
performing an annealing process on the substrate, wherein the annealing process is performed at a pressure range greater than 5 bar.
2. The method of claim 1 , wherein the gap filling layer is a Co layer or a Co alloy.
3. The method of claim 1 , wherein performing the annealing process further comprises:
maintaining a substrate temperature greater than 250 degrees Celsius.
4. The method of claim 1 , wherein the barrier layer is a Ta containing layer or a Ti containing layer.
5. The method of claim 1 , wherein the barrier layer, the interface layer and the gap filling layer are formed in a cluster system without breaking vacuum.
6. The method of claim 1 , wherein performing the annealing process further comprises:
increasing grain sizes of the gap filling layer.
7. The method of claim 1 , wherein the interface layer is a metal containing layer.
8. The method of claim 7 , wherein the interface layer is at least one of a tungsten containing material, nickel containing material, aluminum containing material, ruthenium containing material, or manganese containing material.
9. The method of claim 1 , further comprising:
performing a pre-cleaning process prior to forming the barrier layer.
10. The method of claim 9 , wherein performing the pre-cleaning process further comprises:
maintaining a substrate temperature greater than 250 degrees Celsius.
11. The method of claim 1 , wherein forming the gap filling layer further comprises:
(a) performing a deposition process to form a portion of the gap filling layer; and
(b) performing a second plasma treatment process on the portion of the gap filling layer.
12. The method of claim 11 , further comprising:
repeating (a) and (b).
13. The method of claim 11 , wherein the second plasma treatment process further comprises:
supplying a treatment gas mixture comprising hydrogen containing gas.
14. The method of claim 11 , wherein the deposition process is a CVD process.
15. A method for forming an interconnection structure, comprising:
forming a barrier layer in an opening formed in a material layer disposed on a substrate;
performing a first plasma treatment process on the barrier layer;
performing a gap filling layer formation process over the barrier layer by repeatedly performing a deposition process and a second plasma treatment process until a predetermined thickness of a gap filling layer is obtained; and
performing an annealing process on the gap filling layer at a pressure greater than 5 bar while supplying hydrogen or hydrogen isotope containing gas, wherein the annealing process is performed after completion of the gap filling layer formation process and after the gap fill layer fills the opening.
16. The method of claim 15 , wherein the gap filling layer is formed on an interface layer, wherein the gap filling layer and the interface layer are formed in the opening, and wherein a width of the opening is less than 20 nm and a thickness of the interface layer is in a range of about 0.3 nm to 3 nm.
17. An interconnection structure, comprising:
a barrier layer formed in an opening defined in a material layer disposed on a substrate, wherein the barrier layer is densified by a plasma treatment, and wherein a width of the opening is less than 20 nm;
an interface layer disposed on the barrier layer within the opening, wherein a thickness of the interface layer is in a range of about 0.3 nm to about 3 nm; and
a gap filling layer disposed on the interface layer, wherein the gap filling layer has an average grain size greater than 10 nm.
18. The interconnection structure of claim 17 , wherein the gap filling layer is a Co layer or Co alloy.
19. The interconnection structure of claim 17 , wherein the interface layer is a Ru containing layer and the barrier layer is a Ta containing layer or a Ti containing layer.