Quantum dot array devices with shared gates

1. A device, comprising:

a quantum well stack structure of a quantum dot device, wherein the quantum well stack structure includes a plurality of rows of quantum dot formation regions, and insulating material is present between adjacent rows of the plurality of rows; and

a gate that extends over multiple ones of the rows;

wherein the quantum well stack structure includes a continuous quantum well stack that includes the plurality of rows of the quantum dot formation regions, and

wherein the insulating material is over the continuous quantum well stack, the insulating material includes a plurality of trenches corresponding to the plurality of rows, and the plurality of trenches extend toward the continuous quantum well stack.

2. The device of claim 1 , wherein the gate includes a gate metal that extends over multiple ones of the rows.

3. The device of claim 1 , wherein the gate is one of a plurality of gates that extend over multiple ones of the rows.

4. The device of claim 3 , further comprising:

a spacer material between adjacent ones of the plurality of gates.

5. The device of claim 1 , further comprising:

an interlayer dielectric (ILD) on the gate; and

a conductive contact extending through the ILD to contact gate metal of the gate.

6. The device of claim 1 , wherein gate metal of the gate is at least partially in each of the plurality of trenches.

7. The device of claim 6 , wherein a gate dielectric is at bottoms of the trenches between the gate metal and the continuous quantum well stack.

8. The device of claim 1 , wherein the quantum well stack structure includes first and second quantum well layers, the gate is a first gate on a first face of the quantum well stack structure, and the device further includes:

a second gate on a second face of the quantum well stack structure, wherein the second face is opposite to the first face.

9. The device of claim 8 , wherein the second gate is a mirror image of the first gate around the quantum well stack structure.

10. A method of manufacturing a quantum dot device, comprising:

providing a quantum well stack;

providing an insulating material to define quantum dot formation regions in the quantum well stack, wherein the quantum dot formation regions are arranged as a plurality of parallel rows, and the insulating material is between adjacent rows of the plurality of rows; and

forming gates that extend over multiple ones of the parallel rows of the quantum dot formation regions, wherein:

either the quantum well stack structure includes a continuous quantum well stack that includes the plurality of rows of the quantum dot formation regions, the insulating material is provided over the continuous quantum well stack, the insulating material includes a plurality of trenches corresponding to the plurality of rows, and the plurality of trenches extend toward the continuous quantum well stack,

or the quantum well stack structure includes a plurality of fins corresponding to the plurality of rows, each fin including a quantum well stack, and the insulating material is between the fins.

11. The method of claim 10 , wherein the quantum well stack includes first and second quantum well layers, providing the quantum well stack includes providing the quantum well stack on a support, and the method further includes:

after forming the gates, separating the first and second quantum well layers from the support.

12. The device of claim 1 , wherein the device includes a quantum processing device, a non-quantum processing device, and a memory device, and wherein:

the quantum processing device includes the quantum well stack structure and the gate,

the non-quantum processing device is coupled to the quantum processing device to control one or more voltages applied to the gate, and

the memory device is to store data generated during operation of the quantum processing device.

13. A device, comprising:

a quantum well stack structure of a quantum dot device, wherein the quantum well stack structure includes a plurality of rows of quantum dot formation regions, and insulating material is present between adjacent rows of the plurality of rows; and

a gate that extends over multiple ones of the rows,

wherein the quantum well stack structure includes a plurality of fins corresponding to the plurality of rows, each fin including a quantum well stack, and

wherein the insulating material is between the fins.

14. The device of claim 13 , wherein adjacent fins are spaced apart by a distance between 20 and 100 nanometers.

15. The device of claim 13 , wherein the gate includes a gate metal that extends over multiple ones of the rows.

16. The device of claim 13 , wherein the gate is one of a plurality of gates that extend over multiple ones of the rows.

17. The device of claim 16 , further comprising:

a spacer material between adjacent ones of the plurality of gates.

18. The device of claim 13 , wherein the quantum well stack structure includes first and second quantum well layers, the gate is a first gate on a first face of the quantum well stack structure, and the device further includes:

a second gate on a second face of the quantum well stack structure, wherein the second face is opposite to the first face.

19. The device of claim 18 , wherein the second gate is a mirror image of the first gate around the quantum well stack structure.

20. The device of claim 13 , wherein the device includes a quantum processing device, a non-quantum processing device, and a memory device, and wherein:

the quantum processing device includes the quantum well stack structure and the gate,

the non-quantum processing device is coupled to the quantum processing device to control one or more voltages applied to the gate, and

the memory device is to store data generated during operation of the quantum processing device.