Quantum dot light-emitting diode and manufacturing method thereof
A quantum dot light-emitting diode includes a substrate, an anode electrode layer, a cathode electrode layer, a light-emitting layer, and an electron blocking layer. The anode electrode layer is disposed on the substrate. The cathode electrode layer is disposed on the anode electrode layer. The light-emitting layer is disposed between the cathode electrode layer and the anode electrode layer. The light-emitting layer includes a plurality of first particles. The electron blocking layer is disposed between the light-emitting layer and the anode electrode layer. The electron blocking layer includes a plurality of second particles. The first particles and the second particles are quantum dots. A size of the second particles is smaller than a size of the first particles.
1. A quantum dot light-emitting diode, comprising:
a substrate,
an anode electrode layer disposed on the substrate;
a cathode electrode layer disposed on the anode electrode layer;
a light-emitting layer disposed between the cathode electrode layer and the anode electrode layer, wherein the light-emitting layer includes a plurality of first particles; and
an electron blocking layer disposed between the light-emitting layer and the anode electrode layer, wherein the electron blocking layer includes a plurality of second particles, the first particles and the second particles are quantum dots, and a size of the second particles is smaller than a size of the first particles.
2. The quantum dot light-emitting diode of claim 1 , wherein a material of the first particles and a material of the second particles are substantially the same.
3. The quantum dot light-emitting diode of claim 1 , wherein the electron blocking layer includes a plurality of p-type dopants.
4. The quantum dot light-emitting diode of claim 1 , wherein the electron blocking layer includes Ag.
5. The quantum dot light-emitting diode of claim 1 , wherein the second particles have a diameter in a range from about 1 nm to about 3 nm.
6. The quantum dot light-emitting diode of claim 1 , wherein the first particles and the second particles are CdSe.
7. The quantum dot light-emitting diode of claim 1 , wherein the electron blocking layer includes CdSe.
8. The quantum dot light-emitting diode of claim 1 , further comprising:
at least one hole transporting layer disposed between the anode electrode layer and the electron blocking layer, wherein the hole transporting layer is in direct contact with the electron blocking layer; and
an electron transporting layer disposed between the cathode electrode layer and the light-emitting layer, wherein the electron transporting layer is in direct contact with the light-emitting layer.