IP Library › Granted Patent US 11,107,698
Granted Patent B2
US 11,107,698 · App. 16/480,728 · Granted Aug 31, 2021

Substrate treating method

Inventors: Chisayo Nakayama (Kyoto, JP); Yuji Tanaka (Kyoto, JP); Masahiko Harumoto (Kyoto, JP); Masaya Asai (Kyoto, JP); Yasuhiro Fukumoto (Kyoto, JP); Tomohiro Matsuo (Kyoto, JP); Takeharu Ishii (Kyoto, JP)
H01L21/324H01L21/67103
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Quick Facts
Patent No.
US 11,107,698
App. No.
16/480,728
Granted
Aug 31, 2021
Kind
B2
Abstract

An oxygen concentration is lowered in accordance with a set lowering process, and thereafter a heat treatment is performed. Accordingly, the heat treatment is performed to a substrate W while the oxygen concentration in a heat treating space HS is lowered. Consequently, a treatment atmosphere within the heat treating space is able to be made suitable for a heat treatment process, leading to appropriate film deposition. In addition, the oxygen concentration is lowered in accordance with a concentration level in recipes. This avoids an excessively lowered oxygen concentration, leading to prevention of reduced throughput.

Claims (10)

1. A substrate treating method for performing a heat treatment to a substrate having a treated film formed thereon within a heat treating space of a heat treating chamber, the method comprising:

a setting step of setting a lowering process in accordance with a concentration level from recipes where conditions of treating the substrate are specified;

an oxygen concentration lowering step of lowering an oxygen concentration in the heat treating space in accordance with the set lowering process; and

a heat treatment step of performing the heat treatment to the substrate within the heat treating space after the setting step and the oxygen concentration lowering step: wherein the oxygen concentration lowering step includes an exhausting stet of exhausting gases within the heat treating space.

2. The substrate treating method according to claim 1 , wherein the oxygen concentration lowering step includes: the exhausting step of exhausting gases within the heat treating space; and an inert gas supplying step of supplying an inert gas into the heat treating space.

3. The substrate treating method according to claim 2 , wherein the exhausting step is performed from through holes through which support pins moving forward/backward from a heat treating plate are inserted.

4. The substrate treating method according to claim 2 , wherein

the exhausting step is performed from an exhaust port of a cover that surrounds a heat treating plate and through holes through which support pins moving forward/backward from the heat treating plate are inserted.

5. The substrate treating method according to claim 1 , wherein

the treated film is made from a directed self-assembly material.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 25, 2019
From: NAKAYAMA, CHISAYO; TANAKA, YUJI; HARUMOTO, MASAHIKO; ASAI, MASAYA; FUKUMOTO, YASUHIRO; ISHII, TAKEHARU
To: SCREEN HOLDINGS CO., LTD.
Reel/Frame 049856/0978 →
Priority Claims (1)
JP JP2017-025228 · Feb 14, 2017 · national
Continuity (1)
Related Publication 20210134605A1 · May 6, 2021
Cited By (1)
US 12,186,851