Semiconductor device and method for manufacturing the same, and power conversion device

1. A semiconductor device comprising:

an insulating substrate including an insulating layer;

a semiconductor element connected above the insulating substrate;

a conductor substrate connected above the semiconductor element; and

a case member surrounding a region overlapping with the insulating substrate, the semiconductor element, and the conductor substrate in plan view to avoid the region,

a plurality of metal patterns being arranged to be spaced from each other on a main surface of the insulating layer,

a groove being formed between a pair of adjacent metal patterns of the plurality of metal patterns,

a through hole being formed in the conductor substrate at a position overlapping with the groove in plan view,

a sealant being filled into the region surrounded by the case member.

2. The semiconductor device according to claim 1 , wherein, in the insulating substrate, the insulating layer is joined to a metal plate to be integrated therewith.

3. The semiconductor device according to claim 2 , wherein the groove is formed to linearly extend in plan view between the pair of adjacent metal patterns.

4. The semiconductor device according to claim 3 , wherein

the case member has a rectangular planar shape having long sides and short sides, and

the through hole is formed within a region which is arranged at a center when the long sides are each equally divided into three, and is arranged at a center when the short sides are each equally divided into three, of the region surrounded by the case member.

5. The semiconductor device according to claim 4 , wherein the through hole has a maximum width of more than or equal to 1 mm and less than or equal to 10 mm in plan view.

6. The semiconductor device according to claim 4 , wherein a minimum spacing between the insulating substrate and the conductor substrate is more than or equal to 0.2 mm and less than or equal to 3 mm.

7. The semiconductor device according to claim 3 , wherein the through hole has a maximum width of more than or equal to 1 mm and less than or equal to 10 mm in plan view.

8. The semiconductor device according to claim 3 , wherein a minimum spacing between the insulating substrate and the conductor substrate is more than or equal to 0.2 mm and less than or equal to 3 mm.

9. The semiconductor device according to claim 2 , wherein

the case member has a rectangular planar shape having long sides and short sides, and

the through hole is formed within a region which is arranged at a center when the long sides are each equally divided into three, and is arranged at a center when the short sides are each equally divided into three, of the region surrounded by the case member.

10. The semiconductor device according to claim 9 , wherein the through hole has a maximum width of more than or equal to 1 mm and less than or equal to 10 mm in plan view.

11. The semiconductor device according to claim 2 , wherein the through hole has a maximum width of more than or equal to 1 mm and less than or equal to 10 mm in plan view.

12. The semiconductor device according to claim 2 , wherein a minimum spacing between the insulating substrate and the conductor substrate is more than or equal to 0.2 mm and less than or equal to 3 mm.

13. The semiconductor device according to claim 1 , wherein the groove is formed to linearly extend in plan view between the pair of adjacent metal patterns.

14. The semiconductor device according to claim 1 , wherein

the case member has a rectangular planar shape having long sides and short sides, and

the through hole is formed within a region which is arranged at a center when the long sides are each equally divided into three, and is arranged at a center when the short sides are each equally divided into three, of the region surrounded by the case member.

15. The semiconductor device according to claim 1 , to wherein the through hole has a maximum width of more than or equal to 1 mm and less than or equal to 10 mm in plan view.

16. The semiconductor device according to claim 1 , wherein a minimum spacing between the insulating substrate and the conductor substrate is more than or equal to 0.2 mm and less than or equal to 3 mm.

17. The semiconductor device according to claim 1 , wherein a spacing between an end surface of the conductor substrate and the case member in a direction along the main surface is more than or equal to 0.25 mm and less than or equal to 3 mm.

18. The semiconductor device according to claim 1 , wherein the sealant is an epoxy resin or a silicone resin.

19. A power conversion device comprising:

a main conversion circuit having a power semiconductor device according to claim 1 , and configured to convert input power and output the power; and

a control circuit configured to output a control signal for controlling the main conversion circuit to the main conversion circuit.

20. A method for manufacturing a semiconductor device, the method comprising:

joining a conductor substrate above an insulating substrate including an insulating layer to sandwich a semiconductor element therebetween;

placing the insulating substrate, the semiconductor element, and the conductor substrate to be surrounded by a case member; and

sealing the semiconductor element by supplying a sealant into a region surrounded by the case member,

the case member surrounding the region overlapping with the insulating substrate, the semiconductor element, and the conductor substrate in plan view to avoid the region,

forming a plurality of metal patterns spaced from each other on a main surface of the insulating layer,

forming a groove between a pair of adjacent metal patterns of the plurality of metal patterns,

forming a through hole in the conductor substrate at a position overlapping with the groove in plan view.