Tungsten chemical mechanical planarization (CMP) with low dishing and low erosion topography

1. A chemical mechanical planarization (CMP) composition comprising:

at least one amidine compound, or hydrolyzed derivative thereof, selected from the group consisting of 2-phenyl-2-imidazoline and 1,8-Diazabicyclo[5.4.0]undec-7-ene;

silica;

hydrogen peroxide;

ferric nitrate;

glycine;

malonic acid; and

a solvent.

2. The CMP composition of claim 1 , wherein the CMP composition comprises a pH ranging from 1 through 7.

3. The CMP composition of claim 1 , wherein the CMP composition comprises a pH ranging from 2 through 5.

4. The CMP composition of claim 1 , wherein the solvent is selected from the group consisting of: water, alcohols, ethers, ketones, glycols, organic acids, and combinations thereof.

5. A system for chemical mechanical planarization of a semiconductor substrate having at least one surface comprising tungsten, the system comprising:

a polishing pad;

the CMP composition of claim 1 ;

and an applicator operationally configured to apply the CMP composition to the polishing pad; and

a carrier that is operationally configured to bring the at least one surface of comprising tungsten in contact with the polishing pad.

6. A method for chemical mechanical planarization (CMP) of a tungsten-containing surface of a semiconductor device, comprising the steps of:

a) applying the CMP composition of claim 1 to a polishing pad;

b) after performing step (a), polishing the tungsten-containing surface with the polishing pad produce a polished tungsten-containing surface.

7. The method of claim 6 , further comprising:

c) continuing to perform step (b) until the tungsten-containing surface comprises a dishing topography of less than 1000 Angstroms and an erosion topography of less than 1000 Angstroms.