Processing system and method of forming a contact
Embodiments disclosed herein include a processing system and a method of forming a contact. The processing system includes a plurality of process chambers configured to deposit, etch, and/or anneal a source/drain region of a substrate. The method includes depositing a doped semiconductor layer over a source/drain region, forming an anchor layer in a trench, and depositing a conductor in the trench. The method of forming a contact results in reduced contact resistance by using integrated processes, which allows various operations of the source/drain contact formation to be performed within the same processing system.
1. A processing system comprising:
a system controller;
a first process chamber, wherein the system controller is configured to cause the first process chamber to deposit a doped semiconductor layer and a metal silicide layer on an exposed surface of a source/drain region of a substrate, wherein the source/drain region is exposed through a trench formed in a dielectric material formed over the source/drain region, and the source/drain region has a first dopant concentration and the doped semiconductor layer has a second dopant concentration higher than the first dopant concentration;
a second process chamber, wherein the system controller is configured cause the second process chamber to form an anchor layer over the metal silicide layer and sidewalls of the trench;
a third process chamber, wherein the system controller is configured to cause the third process chamber to fill the trench with a conductor; and
a fourth process chamber, wherein the system controller is configured to cause the fourth process chamber to heat the substrate to reflow the conductor within the trench.
2. The processing system of claim 1 , wherein the first process chamber is an epitaxial chamber, the second process chamber is a physical vapor deposition (PVD) chamber, the third process chamber is a chemical vapor deposition (CVD) chamber, and the fourth process chamber is an anneal chamber.
3. The processing system of claim 1 further comprising:
a fifth process chamber, wherein the system controller is configured to cause the fifth process chamber to deposit a barrier layer over the anchor layer.
4. The processing system of claim 3 , wherein the system controller is configured to cause the fifth process chamber to deposit a cap layer over the metal silicide layer.
5. The processing system of claim 1 , further comprising:
a fifth process chamber, wherein the system controller is configured to cause the fifth process chamber to deposit a cap layer between the anchor layer and the metal silicide layer.
6. The processing system of claim 1 , further comprising:
a sixth process chamber, wherein the system controller is configured to cause the sixth process chamber to deposit an overburden layer over the conductor.
7. The processing system of claim 6 , wherein the sixth process chamber is a physical vapor deposition (PVD) chamber.
8. The processing system of claim 6 , wherein the anchor layer, the conductor, and the overburden layer comprise cobalt (Co).
9. A processing system comprising:
a plurality of process chambers comprising:
a first process chamber configured to remove contaminant from an exposed surface of a source/drain region of a substrate, wherein the source/drain region is exposed through a trench formed in a dielectric material formed over the source/drain region;
a second process chamber configured to deposit sequentially a doped semiconductor layer and a metal silicide layer over the source/drain region, wherein the source/drain region has a first dopant concentration and the doped semiconductor layer has a second dopant concentration higher than the first dopant concentration;
a third process chamber configured to deposit a barrier layer on the metal silicide layer and sidewalls of the trench;
a fourth process chamber configured to deposit an anchor layer over the barrier layer;
a fifth process chamber configured to fill the trench with a conductor;
a sixth process chamber configured to deposit an overburden layer over the conductor; and
a seventh process chamber configured to heat the substrate to reflow the conductor within the trench.
10. The processing system of claim 9 , wherein the second process chamber is an epitaxial chamber, the third process chamber is an atomic layer deposition (ALD) chamber, the fourth process chamber is a physical vapor deposition (PVD) chamber, the fifth process chamber is a chemical vapor deposition (CVD) chamber, the sixth process chamber is a PVD chamber, and the seventh process chamber is an anneal chamber.
11. The processing system of claim 9 further comprising:
a first transfer chamber coupled to one or more of the plurality of process chambers, the first transfer chamber configured to transfer the substrate to and receive the substrate from the one or more of the plurality of process chambers coupled to the first transfer chamber.
12. The processing system of claim 11 , further comprising:
a pass-through chamber coupled to the first transfer chamber; and
a second transfer chamber coupled to the pass-through chamber.
13. The processing system of claim 9 , wherein the anchor layer, the conductor, and the overburden layer comprise cobalt (Co).
14. The processing system of claim 9 , wherein the third process chamber is configured to form a cap layer between the barrier layer and the metal silicide layer.
15. The processing system of claim 14 , wherein the barrier layer and the cap layer comprise nitrogen (N).
16. A method of forming a contact, comprising: depositing a doped semiconductor layer over an exposed surface of a source/drain region of a substrate, wherein the source/drain region is exposed through a trench formed in a dielectric material formed over the source/drain region; depositing a metal silicide layer over the doped semiconductor layer in a first process chamber;
transferring the substrate to a second chamber to form an anchor layer over the metal silicide layer and sidewalls of the trench; transferring the substrate to a third chamber to fill the trench with a conductor; and
transferring the substrate to a second chamber to heat the substrate such that the conductor reflows within the trench; wherein the source/drain region has a first dopant concentration, and the doped semiconductor layer has a second dopant concentration higher than the first dopant concentration.
17. The method of claim 16 , further comprising:
depositing a barrier layer over the metal silicide layer; and
forming an overburden layer over the conductor.
18. The method of claim 17 , wherein
the anchor layer and the conductor comprise cobalt (Co), and
the barrier layer comprises nitrogen (N).
19. The method of claim 16 , further comprising planarizing the substrate, the planarizing the substrate comprising a chemical mechanical polishing (CMP) process.