Capacitor including first electrode, dielectric layer, and second electrode, image sensor, and method for producing capacitor
A capacitor includes a first electrode, a second electrode facing the first electrode, and a dielectric layer disposed between the first and second electrodes and being in contact with each of the first and second electrodes. The dielectric layer has a thickness of 10 nm or more. The first electrode contains carbon. At the interface between the dielectric layer and the first electrode, an elemental percentage of carbon is 30 atomic % or less.
1. A capacitor comprising:
a first electrode;
a second electrode facing the first electrode; and
a dielectric layer disposed between the first and second electrodes and being in contact with each of the first and second electrodes, wherein:
the dielectric layer has a thickness of 16 nm or more,
the first electrode contains carbon,
the dielectric layer contains carbon, and
in a middle portion of the first electrode between an uppermost surface of the first electrode facing the dielectric layer and a lowermost surface of the first electrode opposed to the uppermost surface, an elemental percentage of carbon is 30 atomic % or less.
2. The capacitor according to claim 1 , wherein
the dielectric layer is made of at least one selected from the group consisting of a hafnium oxide and a zirconium oxide.
3. The capacitor according to claim 1 , wherein
the first electrode is made of at least one selected from the group consisting of a titanium nitride and a tantalum nitride.
4. The capacitor according to claim 1 , wherein:
an interface between the dielectric layer and the first electrode has a trenched shape,
depressed in part in a direction from the second electrode toward the first electrode; and
the dielectric layer is provided along the trenched shape.
5. The capacitor according to claim 1 , wherein in the uppermost surface of the first electrode facing the dielectric layer, the elemental percentage of carbon is 3 atomic % or more.
6. The capacitor according to claim 1 , wherein an elemental percentage of carbon in a middle of the first electrode is higher than the elemental percentage of carbon in the uppermost surface.
7. An image sensor comprising:
at least one selected from the group consisting of a photoelectric transducer and a photodiode; and
a capacitor, wherein:
the capacitor includes:
a first electrode;
a second electrode facing the first electrode; and
a dielectric layer disposed between the first and second electrodes and being in contact with each of the first and second electrodes,
the dielectric layer has a thickness of 16 nm or more,
the first electrode contains carbon,
the dielectric layer contains carbon, and
in a middle portion of the first electrode between an uppermost surface of the first electrode facing the dielectric layer and a lowermost surface of the first electrode opposed to the uppermost surface, an elemental percentage of carbon is 30 atomic % or less.
8. The image sensor according to claim 7 , wherein
the dielectric layer is made of at least one selected from the group consisting of a hafnium oxide and a zirconium oxide.
9. The image sensor according to claim 7 , wherein
the first electrode is made of at least one selected from the group consisting of a titanium nitride and a tantalum nitride.
10. The image sensor according to claim 7 , wherein:
an interface between the dielectric layer and the first electrode has a trenched shape, depressed in part in a direction from the second electrode toward the first electrode; and
the dielectric layer is provided along the trenched shape.
11. The image sensor according to claim 7 , wherein in the uppermost surface of the first electrode facing the dielectric layer, the elemental percentage of carbon is 3 atomic % or more.
12. The image sensor according to claim 7 , wherein an elemental percentage of carbon in a middle of the first electrode is higher than the elemental percentage of carbon in the uppermost surface.
13. A capacitor comprising:
a first electrode;
a second electrode facing the first electrode; and
a dielectric layer disposed between the first and second electrodes and being in contact with each of the first and second electrodes, wherein:
the dielectric layer has a thickness of 16 nm or more,
the first electrode contains carbon,
the dielectric layer contains carbon, and
in an uppermost surface of the first electrode facing the dielectric layer, an elemental percentage of carbon is 3 atomic % or more and 30 atomic % or less.
14. An image sensor comprising:
at least one selected from the group consisting of a photoelectric transducer and a photodiode; and
a capacitor, wherein:
the capacitor includes:
a first electrode;
a second electrode facing the first electrode; and
a dielectric layer disposed between the first and second electrodes and being in contact with each of the first and second electrodes,
the dielectric layer has a thickness of 16 nm or more,
the first electrode contains carbon,
the dielectric layer contains carbon, and
in an uppermost surface of the first electrode facing the dielectric layer, an elemental percentage of carbon is 3 atomic % or more and 30 atomic % or less.