Optoelectronic component
An optoelectronic component includes an active layer having a multiple quantum well structure, wherein the multiple quantum well structure includes quantum well layers, including Al x1 In y1 Ga 1-x1-y1 N with 0≤x1<0.03, 0≤y1≤0.1 and x1+y1≤1, and barrier layers including Al x2 In y2 Ga 1-x2-y2 N with 0≤x2≤1, 0≤y2≤0.02 and x2+y2≤1, wherein the barrier layers have a spatially varying aluminium content x2, a maximum value of the aluminium content in the barrier layers is x2,max≥0.05, and a minimum value of the aluminium content in the barrier layers is x2,min<0.05.
1. An optoelectronic component comprising an active layer having a multiple quantum well structure, wherein the multiple quantum well structure comprises quantum well layers, comprising Al x1 In y1 Ga 1-x1-y1 N with 0≤x1<0.03, 0≤y1≤0.1 and x1+y1≤1, and barrier layers comprising Al x2 In y2 Ga 1-x2-y2 N with 0≤x2≤1, 0≤y2≤0.02 and x2+y2≤1, the barrier layers have a spatially varying aluminium content x2, a maximum value of the aluminium content in the barrier layers is x2,max≥0.05, a minimum value of the aluminium content in the barrier layers is x2,min<0.05, the multiple quantum well structure is arranged between an n-type semiconductor region and a p-type semiconductor region, an intermediate layer is arranged between a barrier layer and a subsequent quantum well layer in a direction pointing from the n-type semiconductor region to the p-type semiconductor region, the intermediate layer is directly adjacent to the subsequent quantum well layer, and the intermediate layer comprises Al x3 In y3 Ga 1-x3-y3 N with 0≤x3<0.03, 0≤y3≤0.02 and x3+y3≤1.
2. The optoelectronic component according to claim 1 , wherein the intermediate layer is less than 1.5 nm thick.
3. The optoelectronic component according to claim 1 , wherein the barrier layers have the maximum value x2,max of the aluminium content at at least one interface to an adjacent quantum well layer.
4. The optoelectronic component according to claim 1 , wherein the maximum value of the aluminium content in the barrier layers is x2,max≥0.1.
5. The optoelectronic component according to claim 1 , wherein the maximum value of the aluminium content in the barrier layers is x2,max≥0.2.
6. The optoelectronic component according to claim 1 , wherein the aluminium content in the barrier layers decreases from an interface with the layer preceding it in the form of one or more steps or continuously to the minimum value x2,min, and increases from the minimum value in the form of one or more steps or continuously again.
7. The optoelectronic component according to claim 1 , wherein the barrier layers have the minimum value x2,min of the aluminium content in a region having a distance of at least 1 nm from an adjacent quantum well layer.
8. The optoelectronic component according to claim 1 , wherein the minimum value of the aluminium content in the barrier layers is x2,min<0.02.
9. The optoelectronic component according to claim 1 , wherein the minimum value of the aluminium content in the barrier layers is x2,min=0.
10. The optoelectronic component according to claim 1 , wherein the intermediate layer comprises GaN.
11. The optoelectronic component according to claim 1 , wherein the barrier layers each directly adjoin a preceding quantum well layer in a direction pointing from the n-type semiconductor region to the p-type semiconductor region.
12. The optoelectronic component according to claim 1 , wherein the optoelectronic component is adapted to emit UV radiation having a central wavelength of less than 420 nm.
13. The optoelectronic component according to claim 12 , wherein the central wavelength is 365 nm to 400 nm.