Display panel, manufacturing method thereof, display device
A display panel is provided, including a substrate on a base, a transistor stack on the substrate, and a fluorescent layer between the base and the transistor stack. The fluorescent layer is configured to prevent light from damaging an active layer in the transistor stack in a laser lift-off process, and an orthographic projection of the fluorescent layer on the base overlaps an orthographic projection of the active layer on the base. A display device comprising the display panel, and a manufacturing method of the display panel are further provided.
1. A display panel comprising:
a substrate on a base;
a transistor stack on the substrate; and
a fluorescent layer between the base and the transistor stack,
wherein the fluorescent layer is configured to prevent light from damaging an active layer in the transistor stack in a laser lift-off process,
wherein an orthographic projection of the fluorescent layer on the base overlaps an orthographic projection of the active layer on the base, and
wherein the fluorescent layer comprises a photoresist mixed with at least one of an organic fluorescent material or an inorganic fluorescent material.
2. The display panel according to claim 1 , wherein the base comprises a rigid base and the substrate comprises a flexible substrate.
3. The display panel according to claim 1 , wherein the orthographic projection of the fluorescent layer on the base completely overlaps the orthographic projection of the active layer on the base.
4. The display panel according to claim 1 , wherein the orthographic projection of the fluorescent layer on the base completely overlaps an orthographic projection of the substrate on the base.
5. The display panel according to claim 1 ,
wherein the organic fluorescent material comprises at least one of fluorescein, rhodamine, a cyanine dye or a pyrene dye, and
wherein the inorganic fluorescent material comprises at least one of an alkali metal sulfide or an aluminate.
6. The display panel according to claim 1 , wherein the transistor stack comprises the active layer, a gate insulating layer on the active layer, a gate on the gate insulating layer, an interlayer insulating layer on the gate, and a source and a drain on the interlayer insulating layer and in contact with the active layer through a via hole in the interlayer insulating layer.
7. The display panel according to claim 1 , further comprising:
a passivation layer on the transistor stack,
a planarization layer on the passivation layer,
an electrode layer on the planarization layer and in contact with the transistor stack through a via hole in the passivation layer and the planarization layer,
a pixel defining layer on the electrode layer,
a light emitting layer on the pixel defining layer, and
a thin film encapsulation layer on the light emitting layer.
8. The display panel according to claim 7 , further comprising a support layer between the pixel defining layer and the light emitting layer.
9. The display panel according to claim 1 , further comprising a buffer layer between the fluorescent layer and the active layer.
10. A display device comprising the display panel according to claim 1 .
11. The display device according to claim 10 , wherein the base is removed from the substrate.
12. A manufacturing method of a display panel, comprising:
providing a substrate on a base;
mixing at least one of an organic fluorescent material or an inorganic fluorescent material in a photoresist to form a fluorescent material, and coating the fluorescent material on the substrate to form a fluorescent layer, the fluorescent layer being configured to prevent light from damaging an active layer in a transistor stack in a laser lift-off process;
providing the transistor stack on the fluorescent layer, wherein an orthographic projection of the fluorescent layer on the base overlaps an orthographic projection of the active layer on the base; and
lifting off the base from the substrate by the laser lift-off process.
13. The manufacturing method according to claim 12 , wherein said coating the fluorescent material on the substrate to form the fluorescent layer comprises:
patterning the fluorescent material to form the fluorescent layer such that the orthographic projection of the fluorescent layer on the base completely overlaps the orthographic projection of the active layer on the base.
14. The manufacturing method according to claim 12 , further comprising:
providing a buffer layer on the fluorescent layer prior to providing the transistor stack.
15. The manufacturing method according to claim 12 , wherein said providing the transistor stack on the fluorescent layer comprises:
forming the active layer, a gate insulating layer, a gate, an interlayer insulating layer, and a source and a drain on the fluorescent layer successively,
wherein the source and the drain are in contact with the active layer through a via hole in the interlayer insulating layer.
16. The manufacturing method according to claim 12 , further comprising:
forming a passivation layer, a planarization layer, an electrode layer, a pixel defining layer, a light emitting layer, and an encapsulation layer on the transistor stack successively,
wherein the electrode layer is in contact with a source and a drain through a via hole in the passivation layer and the planarization layer.
17. The manufacturing method according to claim 16 , further comprising:
forming a support layer between the pixel defining layer and the light emitting layer.
18. The manufacturing method according to claim 12 , wherein the base comprises a rigid material, and the substrate comprises a flexible material.