IP Library › Granted Patent US 11,115,019
Granted Patent B2
US 11,115,019 · App. 15/917,476 · Granted Sep 7, 2021

Dynamic short circuit protection

Inventors: Xi Lu (Northville, MI); Chingchi Chen (Ann Arbor, MI)
Assignee: Ford Global Technologies, LLC
H03K17/0828H03K5/24
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Quick Facts
Patent No.
US 11,115,019
App. No.
15/917,476
Granted
Sep 7, 2021
Kind
B2
Abstract

Circuitry includes a pair of switches arranged in series, and a gate driver. The gate driver, responsive to a magnitude of current through one of the switches exceeding a threshold, discharges a gate of the one through a first resistor. The gate driver also, responsive to a voltage across a parasitic inductance of the switch becoming zero, discharges the gate through a second resistor but not the first resistor.

Claims (21)

1. Circuitry comprising:

a pair of switches arranged in series; and

a gate driver configured to

responsive to a magnitude of current through one of the switches exceeding a threshold, discharge a gate of the one through a first resistor, and

responsive to a voltage across a parasitic inductance of the one becoming zero, discharge the gate through a second resistor but not the first resistor,

wherein the gate driver includes a comparator arranged to detect the voltage.

2. The circuitry of claim 1 , wherein the gate driver includes logic gates arranged to toggle state responsive to output of the comparator to discharge the gate through the second resistor but not the first resistor.

3. The circuitry of claim 1 , wherein a resistance of the first resistor is less than a resistance of the second resistor.

4. The circuitry of claim 1 , wherein the switches are transistors.

5. A test apparatus comprising:

a pair of complementary-controlled insulated-gate bipolar transistors;

an inductor in parallel with one of the insulated-gate bipolar transistors; and

gate drive circuitry configured to, responsive to voltage across a parasitic inductance of the other of the insulated-gate bipolar transistors becoming zero during a short circuit event, disconnect a gate of the other of the insulated-gate bipolar transistors from a first resistor and connect the gate to a second resistor to alter a rate of discharge of the gate.

6. The apparatus of claim 5 , wherein the gate drive circuitry includes a comparator arranged to detect the voltage.

7. The apparatus of claim 6 , wherein the gate drive circuitry includes logic gates arranged to toggle state responsive to output of the comparator to disconnect the gate of the other of the insulated-gate bipolar transistors from the first resistor and connect the gate to the second resistor.

8. The apparatus of claim 5 , wherein a resistance of the first resistor is less than a resistance of the second resistor.

9. A method for discharging a gate of one of a pair of series connected switches, comprising:

responsive to a magnitude of current through the one of the switches exceeding a threshold, discharging by a controller a gate of the one through a first resistor, and

responsive to a voltage across a parasitic inductance of the one becoming zero, discharging by the controller the gate through a second resistor but not the first resistor, wherein a resistance of the first resistor is less than a resistance of the second resistor.

10. The method of claim 9 further comprising detecting by a comparator the voltage.

11. The method of claim 9 , wherein the switches are transistors.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 9, 2018
From: LU, XI; CHEN, CHINGCHI
To: FORD GLOBAL TECHNOLOGIES, LLC
Reel/Frame 045163/0743 →
Continuity (1)
Related Publication 20190280686A1 · Sep 12, 2019
Cited By (2)
US 12,206,390 US 12,592,555