IP Library › Granted Patent US 11,117,996
Granted Patent B2
US 11,117,996 · App. 16/303,285 · Granted Sep 14, 2021

Self-assembly composition for pattern formation and pattern forming method

Inventors: Kazuyo Morita (Tokyo, JP); Kimiko Hattori (Tokyo, JP)
Assignee: OJI HOLDINGS CORPORATION
C08F293/005C07H5/04C08F293/00H01L21/027H01L21/31138C08F2438/01Y02P20/54
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 11,117,996
App. No.
16/303,285
Granted
Sep 14, 2021
Kind
B2
Abstract

It is an object of the present invention to provide a self-assembly composition for pattern formation having a wide range of applicable pattern size and being capable of forming a favorable phase-separated structure. The present invention relates to a self-assembly composition for pattern formation, which comprises a block copolymer comprising a polymerization unit (a) having at least one selected from a structure represented by the following formula (103) and a structure represented by the following formula (104), and a polymerization unit (b) having a structure represented by the following formula (105), wherein the content rate of a sugar moiety in the block copolymer is 3% by mass or more and 80% by mass or less based on the total mass of the block copolymer:

Claims (21)

1. A self-assembly composition for pattern formation, which comprises a block copolymer comprising

a polymerization unit (a) having at least one selected from a structure represented by the following formula ( 103 ) and a structure represented by the following formula ( 104 ), and

a polymerization unit (b) having a structure represented by the following formula ( 105 ), wherein

the content rate of a sugar moiety in the block copolymer is 3% by mass or more and 80% by mass or less based on the total mass of the block copolymer:

wherein, in the formulae ( 103 ) and ( 104 ), R 1 each independently represents a hydrogen atom, an alkyl group, an acyl group, an aryl group, or a phosphoryl group, and a plurality of R 1 may be identical to or different from one another; R 5 represents a hydrogen atom or an alkyl group, and a plurality of R 5 may be identical to or different from one another; X 1 and Y 1 each independently represent a single bond or a linking group, a plurality of X 1 may be identical to or different from one another, and a plurality of Y 1 may be identical to or different from one another; p represents an integer of 2 or more and 1500 or less, r represents an integer of 0 or more, and at least one of a plurality of r represents an integer of 1 or more; and the symbol * represents a binding site with any one of R 1 , when r represents 2 or more, or represents a binding site with any one oxygen atom to which R 1 binds, instead of R 1 ; and

in the formula (105), W 1 represents a carbon atom or a silicon atom, and a plurality of W 1 may be identical to or different from one another; W 2 represents —CR 2 —, —O—, —S—, or —SiR 2 — (provided that R represents a hydrogen atom or an alkyl group containing 1 to 5 carbon atoms, and a plurality of R may be identical to or different from one another), and a plurality of W 2 may be identical to or different from one another; R 11 represents a hydrogen atom, a methyl group, or a hydroxyl group, and a plurality of R 11 may be identical to or different from one another; R 12 represents a phenyl group; and q represents an integer of 2 or more and 3000 or less.

2. The self-assembly composition for pattern formation according to claim 1 , wherein solubility of the block copolymer in at least one selected from propylene glycol monomethyl ether acetate (PGMEA) and dimethylformamide (DMF) is 0.8% by mass or more.

3. The self-assembly composition for pattern formation according to claim 1 , wherein the r represents an integer of 0 or more, and at least one of a plurality of r represents an integer of 1 or more and 10 or less.

4. The self-assembly composition for pattern formation according to claim 1 , which further comprises an organic solvent.

5. The self-assembly composition for pattern formation according to claim 1 , which further comprises an ionic liquid.

6. A pattern forming method, comprising

applying the self-assembly composition for pattern formation according to claim 1 onto a substrate, so as to form a self-assembly film according to self-assembly phase separation, and

subjecting to etching.

7. The pattern forming method according to claim 6 , wherein the etching is a dry etching.

8. The pattern forming method according to claim 6 which further comprises forming a guide pattern on the substrate before forming the self-assembly film.

9. A self-assembly composition for pattern formation, which comprises a block copolymer comprising

a polymerization unit (a) having a structure represented by the following formula (103), and

a polymerization unit (b) having a structure represented by the following formula (105), wherein

the content rate of a sugar moiety in the block copolymer is 3% by mass or more and 80% by mass or less based on the total mass of the block copolymer:

wherein, in the formula (103), R 1 each independently represents a hydrogen atom, an alkyl group, an acyl group, an aryl group, or a phosphoryl group, and a plurality of R 1 may be identical to or different from one another; R 5 represents a hydrogen atom or an alkyl group, and a plurality of R 5 may be identical to or different from one another; X 1 and Y 1 each independently represent a single bond or a linking group, a plurality of X 1 may be identical to or different from one another, and a plurality of Y 1 may be identical to or different from one another; p represents an integer of 2 or more and 1500 or less, r represents an integer of 0 or more, and at least one of a plurality of r represents an integer of 1 or more; and the symbol * represents a binding site with any one of R 1 , when r represents 2 or more, or represents a binding site with any one oxygen atom to which R 1 binds, instead of R 1 ; and

in the formula (105), W 1 represents a carbon atom or a silicon atom, and a plurality of W 1 may be identical to or different from one another; W 2 represents —CR 2 —, —O—, —S—, or —SiR 2 — (provided that R represents a hydrogen atom or an alkyl group containing 1 to 5 carbon atoms, and a plurality of R may be identical to or different from one another), and a plurality of W 2 may be identical to or different from one another; R 11 represents a hydrogen atom, a methyl group, or a hydroxyl group, and a plurality of R 11 may be identical to or different from one another; R 12 represents a phenyl group; and q represents an integer of 2 or more and 3000 or less.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 20, 2018
From: MORITA, KAZUYO; HATTORI, KIMIKO
To: OJI HOLDINGS CORPORATION
Reel/Frame 047553/0140 →
Priority Claims (1)
JP JP2016-101455 · May 20, 2016 · national
Continuity (1)
Related Publication 20190211130A1 · Jul 11, 2019
Cited By (1)
US 12,248,249