Hybrid planar-mixed heterojunction for organic photovoltaics
Disclosed herein are organic photosensitive optoelectronic devices comprising two electrodes in superposed relation; a mixed photoactive layer located between the two electrodes, wherein the mixed photoactive layer comprises at least one donor material having a HOMO energy and at least one acceptor material having a LUMO energy, wherein the at least one donor material and the at least one acceptor material form a mixed donor-acceptor heterojunction; a photoactive layer adjacent to and interfacing with the mixed photoactive layer, wherein the photoactive layer comprises a material having a LUMO energy within 0.3 eV of the LUMO energy of the at least one acceptor material or a HOMO energy within 0.3 eV of the HOMO energy of the at least one donor material; and a buffer layer adjacent to and interfacing with the mixed photoactive layer.
1. An organic photosensitive optoelectronic device comprising:
two electrodes in superposed relation;
a mixed photoactive layer located between the two electrodes, wherein the mixed photoactive layer is a single layer comprising a mixture of at least one donor material having a highest occupied molecular orbital (HOMO) energy and at least one acceptor material having a lowest unoccupied molecular orbital (LUMO) energy, wherein the at least one donor material and the at least one acceptor material form a mixed donor-acceptor heterojunction;
a photoactive layer adjacent to and interfacing with the mixed photoactive layer, wherein the photoactive layer is a single layer comprising a material having a LUMO energy within 0.3 eV of the LUMO energy of the at least one acceptor material; and
a buffer layer adjacent to and interfacing with the mixed photoactive layer, wherein the buffer layer comprises a metal oxide;
wherein the mixed photoactive layer comprises the at least one donor material and the at least one acceptor material at a donor:acceptor ratio ranging from 1:4 to 1:25; and
wherein the photoactive layer has a total thickness less than 10 nm.
2. The device of claim 1 , wherein the photoactive layer comprises a material having a LUMO energy within 0.1 eV of the LUMO energy of the at least one acceptor material.
3. The device of claim 1 , wherein the material having a LUMO energy within 0.3 eV of the LUMO energy of the at least one acceptor material is the same material as the at least one acceptor material.
4. The device of claim 1 , wherein the at least one acceptor material comprises a fullerene or derivative thereof.
5. The device of claim 4 , wherein the at least one donor material comprises tetraphenyldibenzoperiflanthene (DBP).
6. The device of claim 5 , wherein the donor:acceptor ratio is about 1:8.
7. The device of claim 4 , wherein the photoactive layer has a total thickness of about 9 nm.
8. The device of claim 1 , wherein the donor:acceptor ratio ranges from 1:6 to 1:10.
9. The device of claim 1 , wherein the buffer layer quenches excitons at the interface between the buffer layer and the mixed photoactive layer.