Methods for fabricating and etching porous silicon carbide structures
The present disclosure relates to methods of fabricating a porous structure, such as a porous silicon carbide structure. The methods can include a step of providing a structure to be rendered porous, and a step of providing an etching solution. The methods can also include a step of electrochemically etching the structure to produce pores through at least a region of the structure, resulting in the formation of a porous structure. The morphology of the porous structure can be controlled by one or more parameters of the electrochemical etching process, such as the strength of the etching solution and/or the applied voltage.
1. A method of fabricating a porous silicon carbide structure having a selected morphology, comprising:
providing a silicon carbide structure;
providing an etching solution comprising a reducing agent and an oxidizing agent;
electrochemically etching the silicon carbide structure with the etching solution to produce pores through a region of the silicon carbide structure to form a porous silicon carbide structure, wherein electrochemically etching the silicon carbide structure comprises applying a voltage to a surface of the silicon carbide structure to produce a current through the region of the silicon carbide structure;
monitoring a slope of the current versus time; and
controlling an etch propagation rate of the etching solution through the region of the silicon carbide structure to avoid a change in the monitored slope and achieve the selected morphology, wherein the current is proportional to a removal rate of material, and wherein the slope is negative.
2. The method of claim 1 , wherein the silicon carbide structure comprises a 3C, 4H, or 6H polytype of silicon carbide.
3. The method of claim 1 , wherein the silicon carbide structure comprises a silicon carbide semiconductor.
4. The method of claim 1 , wherein the silicon carbide structure comprises a predefined electronic carrier concentration.
5. The method of claim 1 , wherein the silicon carbide structure comprises a predefined crystalline designation.
6. The method of claim 1 , wherein the oxidizing agent comprises water, an alcohol, hydrogen peroxide, or a mixture thereof.
7. The method of claim 1 , wherein the reducing agent comprises hydrofluoric acid.
8. The method of claim 7 , wherein the concentration of the hydrofluoric acid is from about 1% to about 50%, from about 1% to about 20%, from about 1% to about 15%, from about 1% to about 10%, from about 1% to about 5%, or from about 2% to about 5%, by volume.
9. The method of claim 7 , wherein the etch propagation rate is dependent upon the concentration of the hydrofluoric acid.
10. The method of claim 7 , wherein the concentration of hydrofluoric acid is inversely proportional to a porosity of the porous silicon carbide structure.
11. The method of claim 1 , wherein the etching solution further comprises a surfactant.
12. The method of claim 1 , wherein the voltage is from about 20 V to about 40 V, from about 20 V to about 30 V, or from about 20 V to about 26 V.
13. The method of claim 1 , wherein the selected morphology comprises at least one of a selected average pore diameter, a selected pore wall thickness, or a selected porosity.
14. The method of claim 1 , wherein the selected morphology comprises an average pore wall thickness of between about 2 nm and about 200 nm.
15. The method of claim 1 , wherein the selected morphology comprises an average pore diameter of between about 0.1 μm and about 3 μm.
16. The method of claim 1 , wherein the selected morphology comprises an average pore diameter of between about 0.1 μm and about 3 μm, and an average pore wall thickness of between about 2 nm and about 200 nm.
17. The method of claim 1 , wherein the selected morphology comprises a porosity of from about 60% to about 96%.
18. The method of claim 1 , wherein the selected morphology comprises a substantially uniform material density.
19. The method of claim 1 , wherein controlling the etch propagation rate comprises:
selecting a concentration of reducing agent; and
selecting a voltage;
wherein the etch propagation rate is inversely proportional to a porosity of the selected morphology at the selected concentration and selected voltage.
20. The method of claim 19 , wherein the selected concentration is from about 1% to about 50%, from about 1% to about 20%, from about 1% to about 15%, from about 1% to about 10%, from about 1% to about 5%, or from about 2% to about 5%, by volume, and the selected voltage is from about 20 V to about 40 V, from about 20 V to about 30 V, or from about 20 V to about 26 V.
21. The method of claim 1 , wherein the silicon carbide structure is electrochemically etched beginning at an “Si” face.
22. The method of claim 1 , wherein the silicon carbide structure is electrochemically etched beginning at a “C” face.
23. A method of fabricating a porous structure, comprising:
providing a starting structure to be rendered porous, wherein the starting structure comprises silicon carbide;
providing an etching solution comprising a selected reducing agent and an oxidizing agent;
electrochemically etching the starting structure with the etching solution to produce pores through a region of the starting structure to form a porous structure, wherein electrochemically etching the structure comprises applying a voltage to a surface of the structure to produce a current through the region of the structure;
monitoring a slope of the current versus time; and
controlling an etch propagation rate of the etching solution through the region of the structure to avoid a change in the monitored slope and achieve a selected porosity, wherein the current is proportional to a removal rate of material, and wherein the slope is negative.
24. The method of claim 23 , wherein the selected porosity is greater than 90%.
25. The method of claim 23 , wherein the reducing agent comprises hydrofluoric acid.
26. The method of claim 23 , wherein controlling the etch propagation rate comprises:
selecting a concentration of reducing agent; and
selecting a voltage;
wherein the etch propagation rate is inversely proportional to the porosity at the selected concentration and selected voltage.
27. The method of claim 26 , wherein the selected concentration is from about 1% to about 50%, from about 1% to about 20%, from about 1% to about 15%, from about 1% to about 10%, from about 1% to about 5%, or from about 2% to about 5%, and the selected voltage is from about 20 V to about 40 V, from about 20 V to about 30 V, or from about 20 V to about 26 V.
28. The method of claim 23 , wherein the starting structure is electrochemically etched beginning at an “Si” face.
29. The method of claim 23 , wherein the starting structure is electrochemically etched beginning at a “C” face.
30. A method of fabricating a porous semiconductor structure via an electrochemical etch process, comprising:
providing a semiconductor structure comprising silicon carbide;
providing an etching solution comprising a reducing agent and an oxidizing agent;
selecting a concentration of the reducing agent;
electrochemically etching the semiconductor structure with the etching solution to produce pores through a region of the semiconductor structure to form a porous semiconductor structure, wherein electrochemically etching the semiconductor structure comprises selecting a voltage and applying the selected voltage to a surface of the semiconductor structure to produce a current through the region of the semiconductor structure;
monitoring a slope of the current versus time; and
controlling an etch propagation rate of the etching solution through the region of the semiconductor structure to avoid a change in the monitored slope and achieve a selected morphology, wherein the current is proportional to a removal rate of material, and wherein the slope is negative,
wherein the porous semiconductor structure comprises a selected porosity.
31. The method of claim 30 , wherein the selected concentration is from about 1% to about 50%, from about 1% to about 20%, from about 1% to about 15%, from about 1% to about 10%, from about 1% to about 5%, or from about 2% to about 5%, by volume, and the selected voltage is from about 20 V to about 40 V, from about 20 V to about 30 V, or from about 20 V to about 26 V.
32. The method of claim 30 , wherein an etch propagation rate is dependent upon the selected concentration.
33. The method of claim 30 , wherein the porous semiconductor structure comprises a selected average pore diameter.
34. The method of claim 1 , wherein controlling the etch propagation rate comprises changing a concentration of the reducing agent.