Electro-optically active device
A silicon based electro-optically active device and method of producing the same. The silicon based electro-optically active device comprising: a silicon-on-insulator (SOI) waveguide; an electro-optically active waveguide including an electro-optically active stack within a cavity of the SOI waveguide; and a lined channel between the electro-optically active stack and the SOI waveguide, the lined channel comprising a liner; wherein the lined channel is filled with a filling material with a refractive index similar to that of a material forming a sidewall of the cavity, to thereby form a bridge-waveguide in the channel between the SOI waveguide and the electro-optically active stack.
1. A silicon based electro-optically active device comprising:
a silicon-on-insulator (SOI) waveguide;
an electro-optically active waveguide including an electro-optically active stack within a cavity of the SOI waveguide; and
a lined channel between the electro-optically active stack and the SOI waveguide, the lined channel comprising a liner,
wherein the lined channel is filled with a filling material with a refractive index similar to that of a material forming a sidewall of the cavity, to thereby form a bridge-waveguide in the lined channel between the SOI waveguide and the electro-optically active stack, and
wherein the liner comprises a first sidewall between the SOI waveguide and the filling material, the first sidewall comprising a material different from a material of the SOI waveguide.
2. The silicon based electro-optically active device of claim 1 , wherein the liner is formed of silicon nitride.
3. The silicon based electro-optically active device of claim 1 , wherein a lowest surface of sidewalls of the lined channel and a top surface of a portion of the liner located in a base of the lined channel are aligned with a top surface of a buried oxide layer of the SOI waveguide.
4. The silicon based electro-optically active device of claim 1 , wherein the liner has a thickness of at least 200 nm no more than 280 nm.
5. The silicon based electro-optically active device of claim 1 , wherein the electro-optically active stack includes a multiple quantum well region.
6. The silicon based electro-optically active device of claim 1 , wherein the filling material is amorphous silicon.
7. The silicon based electro-optically active device of claim 1 , wherein the filling material is silicon-germanium (SiGe).
8. The silicon based electro-optically active device of claim 1 , wherein the electro-optically active stack has a parallelogramal or trapezoidal geometry.
9. The silicon based electro-optically active device of claim 1 , further comprising an epitaxial cladding layer located in-between a silicon substrate of the SOI waveguide and the electro-optically active stack which forms the electro-optically active waveguide, the epitaxial cladding layer having a refractive index less than that of a buffer layer in the electro-optically active stack.
10. The silicon based electro-optically active device of claim 9 , wherein an epitaxial material of the epitaxial cladding layer is silicon.
11. The silicon based electro-optically active device of claim 9 , wherein an epitaxial material of the epitaxial cladding layer is silicon-germanium (SiGe).
12. A method of producing the silicon based electro-optically active device of claim 1 , the method having the steps of:
providing the silicon-on-insulator (SOI) waveguide;
etching the cavity in the SOI waveguide through a BOX layer of the SOI waveguide;
epitaxially growing the electro-optically active stack within the cavity, and etching the electro-optically active stack to form the electro-optically active waveguide, wherein the epitaxially grown electro-optically active stack has a facet in a region adjacent to the sidewall of the cavity;
etching the region to thereby remove the facet and produce a channel between the sidewall and the electro-optically active stack;
lining the channel with the liner to provide the lined channel; and
filling the lined channel with the filling material which has the refractive index similar to that of the material forming the sidewall so that the filling material forms the bridge-waveguide in the channel between the SOI waveguide and the electro-optically active stack.
13. The method of claim 12 , wherein the liner is formed of silicon nitride.
14. The method of claim 12 , wherein the liner has a thickness of at least 200 nm no more than 280 nm.
15. The method of claim 12 , wherein the electro-optically active stack includes a multiple quantum well region.
16. The method of claim 12 , wherein the filling material that the lined channel is filled with comprises amorphous silicon.
17. The method of claim 12 , wherein the filling material that the lined channel is filled with comprises silicon-germanium (SiGe).
18. The method of claim 12 , wherein the step of filling the lined channel is carried out by plasma-enhanced chemical vapour deposition.
19. The method of claim 12 , wherein the step of filling the lined channel is carried out by hot-wire chemical vapour deposition.
20. The method of claim 12 , further including a step of planarizing the filling material through chemical-mechanical polishing.
21. The method of claim 12 , wherein:
the electro-optically active stack has a second facet in a second region adjacent to an opposite sidewall of the cavity,
the step of etching the region also removes the second region to thereby remove the second facet and produce a second channel between the opposite sidewall and the electro-optically active stack, and
the step of filling the lined channel also fills the second channel with amorphous silicon.
22. The method of claim 21 , wherein the silicon based electro-optically active device is a quantum-confined Stark effect based electro-absorption modulator.
23. The method of claim 22 , wherein the electro-optically active stack includes a buffer layer, and the method includes adjusting a height of the buffer layer such that an optical mode in the modulator matches an optical mode in the SOI waveguide.
24. The method of claim 12 , wherein the electro-optically active stack is grown such that it has a parallelogramal or trapezoidal geometry in the cavity.
25. The method of claim 12 , wherein the step of etching a cavity in a part of the SOI waveguide includes the step of etching the SOI waveguide up to or beyond a base of its buried oxide (BOX) layer to create a box-less region.
26. The method of claim 25 , further comprising the step of growing a cladding layer within the cavity, the cladding layer having a refractive index which is less than the refractive index of a buffer layer of the electro-optically active stack.
27. A silicon based electro-optically active device comprising:
a silicon-on-insulator (SOI) waveguide;
an electro-optically active waveguide including an electro-optically active stack within a cavity of the SOI waveguide; and
a lined channel between the electro-optically active stack and the SOI waveguide, the lined channel comprising a liner,
wherein the lined channel is filled with a filling material with a refractive index similar to that of a material forming a sidewall of the cavity, to thereby form a bridge-waveguide in the lined channel between the SOI waveguide and the electro-optically active stack, and
wherein the liner comprises a first sidewall between the SOI waveguide and the filling material, the first sidewall comprising a material different from the filling material.