Spin-current magnetization reversal element, magnetoresistance effect element, and magnetic memory

1. A spin current magnetization rotational element comprising:

a first ferromagnetic metal layer for a magnetization direction to be changed; and

a spin-orbit torque wiring extending in a second direction intersecting a first direction which is an orthogonal direction to a surface of the first ferromagnetic metal layer and configured to be joined to the first ferromagnetic metal layer, wherein

the spin-orbit torque wiring has a structure in which a spin conduction layer joined to the first ferromagnetic metal layer and a spin generation layer joined to the spin conduction layer on a surface on a side opposite to the first ferromagnetic metal layer are laminated, and

wherein a thickness of the spin-orbit torque wiring is equal to or less than 20 nm.

2. A spin current magnetization rotational element comprising:

a first ferromagnetic metal layer for a magnetization direction to be changed; and

a spin-orbit torque wiring extending in a second direction intersecting a first direction which is an orthogonal direction to a surface of the first ferromagnetic metal layer and configured to be joined to the first ferromagnetic metal layer, wherein

the spin-orbit torque wiring has a structure in which a spin conduction layer joined to the first ferromagnetic metal layer and a spin generation layer joined to the spin conduction layer on a surface on a side opposite to the first ferromagnetic metal layer are laminated, and

a ratio t 1 /t 2 of a film thickness t 1 of the spin conduction layer to a film thickness t 2 of the spin generation layer is designed to be equal to or less than a ratio ρ 1 /ρ 2 of a resistivity ρ 1 of the spin conduction layer to a resistivity ρ 2 of the spin generation layer.

3. A spin current magnetization rotational element comprising:

a first ferromagnetic metal layer for a magnetization direction to be changed; and

a spin-orbit torque wiring extending in a second direction intersecting a first direction which is an orthogonal direction to a surface of the first ferromagnetic metal layer and configured to be joined to the first ferromagnetic metal layer, wherein

the spin-orbit torque wiring has a structure in which a spin conduction layer joined to the first ferromagnetic metal layer and a spin generation layer joined to the spin conduction layer on a surface on a side opposite to the first ferromagnetic metal layer are laminated, and

a thickness of the spin conduction layer is a thickness equal to or less than a spin diffusion length of the spin conduction layer.

4. A spin current magnetization rotational element comprising:

a first ferromagnetic metal layer for a magnetization direction to be changed; and

a spin-orbit torque wiring extending in a second direction intersecting a first direction which is an orthogonal direction to a surface of the first ferromagnetic metal layer and configured to be joined to the first ferromagnetic metal layer, wherein

the spin-orbit torque wiring has a structure in which a spin conduction layer joined to the first ferromagnetic metal layer and a spin generation layer joined to the spin conduction layer on a surface on a side opposite to the first ferromagnetic metal layer are laminated, and

the spin conduction layer is formed of a material containing at least any one element of Al, Si, Cu, Ag, Ga, and Ge.

5. The spin current magnetization rotational element according to any one of claims 1 , 3 and 4 , wherein a ratio t 1 /t 2 of a film thickness t 1 of the spin conduction layer to a film thickness t 2 of the spin generation layer is designed to be equal to or less than a ratio ρ 1 /ρ 2 of a resistivity ρ 1 of the spin conduction layer to a resistivity ρ 2 of the spin generation layer.

6. The spin current magnetization rotational element according to claim 1 or 3 , wherein the spin conduction layer is formed of a material containing at least any one element of Al, Si, Cu, Ag, Ga, and Ge.

7. The spin current magnetization rotational element according to any one of claims 1 to 4 , wherein the spin conduction layer has any one cubic crystal structure of NiAl, RuAl, RhAl, IrAl, and TiNi having symmetry of a space group Pm-3m, or any one cubic crystal structure of AN, TaN, YBi, TiC, and TiN having symmetry of a space group Fm-3m.

8. The spin current magnetization rotational element according to any one of claims 1 to 4 , wherein the spin generation layer is formed of a material containing any one element of Mo, Ru, Rh, Pd, Ta, W, Ir, Pt, Au, and Bi.

9. The spin current magnetization rotational element according to claim 4 , wherein a thickness of the spin conduction layer is a thickness equal to or less than a spin diffusion length of the spin conduction layer.

10. The spin current magnetization rotational element according to any one of claims 1 to 4 , wherein a degree of lattice mismatching between the spin conduction layer and the first ferromagnetic metal layer is within 5%.

11. The spin current magnetization rotational element according to any one of claims 1 to 4 , wherein

a low-resistance electrode is provided at both ends of the spin-orbit torque wiring, and

a distance between the low-resistance electrode and a side surface of the first ferromagnetic metal layer facing each other is equal to or less than the spin diffusion length of the spin conduction layer.

12. A magnetoresistance effect element comprising:

the spin current magnetization rotational element according to any one of claims 1 to 4 ;

a second ferromagnetic metal layer configured for a magnetization direction to be fixed; and

a nonmagnetic material layer sandwiched between the first ferromagnetic metal layer and the second ferromagnetic metal layer.

13. A magnetic memory comprising a plurality of magnetoresistance effect elements according to claim 12 .

14. The spin current magnetization rotational element according to claim 3 or 4 , wherein a ratio t 1 /t 2 of a film thickness t 1 of the spin conduction layer to a film thickness t 2 of the spin generation layer is designed to be equal to or less than a ratio ρ 1 /ρ 2 of a resistivity ρ 1 of the spin conduction layer to a resistivity ρ 2 of the spin generation layer, and

a thickness of the spin-orbit torque wiring is equal to or less than 20 nm.

15. The spin current magnetization rotational element according to claim 4 , wherein a thickness of the spin conduction layer is a thickness equal to or less than a spin diffusion length of the spin conduction layer, and

a thickness of the spin-orbit torque wiring is equal to or less than 20 nm.

16. The spin current magnetization rotational element according to claim 4 , wherein a ratio t 1 /t 2 of a film thickness t 1 of the spin conduction layer to a film thickness t 2 of the spin generation layer is designed to be equal to or less than a ratio ρ 1 /ρ 2 of a resistivity ρ 1 of the spin conduction layer to a resistivity ρ 2 of the spin generation layer, and

a thickness of the spin conduction layer is a thickness equal to or less than a spin diffusion length of the spin conduction layer.