Physical unclonable functions with copper-silicon oxide programmable metallization cells
View Patent ↗A physical unclonable functions (PUF) device including a first copper electrode, a second electrode, and a silicon oxide layer positioned directly between the first copper electrode and the second electrode; a method of producing a PUF device; an array comprising a PUF device; and a method of generating a secure key with a plurality of PUF devices.
1. A physical unclonable functions (PUF) device comprising:
a first copper electrode;
a second electrode;
a layer of silicon oxide positioned directly between and in contact with both the first copper electrode and the second electrode; and
an insulating layer is positioned directly between the second electrode and a circuit.
2. The PUF device of claim 1 , wherein the second electrode comprises W, Ni, Pt, TiN, TaN, TiW, silicon, or polycrystalline silicon.
3. The PUF device of claim 1 , wherein the insulating layer comprises SiO 2 , Si 3 N 4 , or a polymer.
4. The PUF device of claim 1 , wherein a switching operation requires less than or equal to 3 V and less than or equal to 100 μA for less than or equal to 400 μs.
5. An array comprising:
a plurality of copper lines; and
a plurality of lines comprising W, Ni, Pt, TiN, TaN, TiW, or polycrystalline silicon, the plurality of lines positioned perpendicular to the plurality of copper lines;
wherein a PUF device is formed at an intersection of the copper lines and the plurality of lines; and
wherein the intersection comprises a layer of silicon oxide in contact with both the plurality of copper lines and the plurality of lines.
6. The array of claim 5 , wherein the PUF device includes a diode.
7. An integrated circuit comprising the array of claim 5 .
8. A system comprising:
an array of devices, wherein each device comprises
a first copper electrode,
a second electrode,
a layer of silicon oxide positioned directly between and in contact with both the first copper electrode and the second electrode; and
an insulating layer is positioned directly between the second electrode and a circuit,
wherein the array of devices is partitionable such that a portion of the devices generates information and another portion of the array provides memory storage.
9. The system of claim 8 , wherein the devices that generate information are activated to provide a stochastic result.
10. The system of claim 9 , wherein the stochastic result is provided by a change in resistance.
11. The system of claim 8 , wherein the devices that provide memory storage are forced into a deterministic state provided by a stable change in resistance.
12. The system of claim 8 , wherein the array of devices is partitionable based on a change in resistance of the devices.