Phase change memory structure and manufacturing method for the same
View Patent ↗Present disclosure provides a phase change memory structure, including a transistor region, a phase change material over the transistor region, a heater over the transistor region and in contact with the phase change material, and a dielectric layer surrounding the heater and the phase change material. The heater includes a first material having a first thermal conductivity, the first material disposed at a periphery of the heater, and a second material having a second thermal conductivity greater than the first thermal conductivity, the second material disposed at a center of the heater. Present disclosure also provides a method for manufacturing the phase change memory structure described herein.
1. A phase change memory (PCM) structure, comprising:
a transistor region;
a phase change material over the transistor region;
a heater over the transistor region and in contact with the phase change material, the heater comprising:
a first material having a first thermal conductivity; and
a second material having a second thermal conductivity greater than the first thermal conductivity, the second material disposed at a center of the heater;
wherein the phase change material is in direct contact with the second material.
2. The PCM structure of claim 1 , wherein the heater is in contact with the phase change material at a first surface comprising the first material and the second material.
3. The PCM structure of claim 1 , further comprising a first metallization layer between the transistor region and the phase change material.
4. The PCM structure of claim 3 , wherein the first metallization layer comprises a bottom electrode and the heater is extending from the bottom electrode to a bottom of the phase change material.
5. The PCM structure of claim 3 , further comprising a second metallization layer over the phase change material.
6. The PCM structure of claim 5 , wherein further comprising a top electrode between the second metallization layer and the phase change material.
7. The PCM structure of claim 1 , further comprising a dielectric layer in contact with the first material of the phase change material.
8. A semiconductor device, comprising:
a transistor;
a first metallization layer over the transistor;
a phase change material over the first metallization layer;
a second metallization layer over the phase change material;
a heater between the first metallization layer and the second metallization layer and in contact with the phase change material, the heater comprising:
a first material having a first heat conductivity; and
a second material contacting the first material and having a second heat conductivity different from the first heat conductivity; and
an insulation layer contacting the first material, the second material, and the phase change material.
9. The semiconductor device of claim 8 , wherein the heater first material comprises a heat insulation shell and the second material comprises a heat conducting core, the first thermal conductivity of the heat insulation shell is smaller than the second thermal conductivity of the heat conducting core.
10. The semiconductor device of claim 9 , wherein the heater is in contact with the phase change material at a first surface comprising the heat insulation shell and the heat conducting core.
11. The semiconductor device of claim 8 , wherein a width of the heater is narrower than a width of the phase change material.
12. The semiconductor device of claim 8 , wherein the heater is spaced from a surface of the phase change material by the insulation layer.
13. The semiconductor device of claim 9 , wherein a thermal conductivity of the insulation layer is lower than the thermal conductivity of the heat conducting core.
14. The semiconductor device of claim 9 , wherein the insulation layer comprises graded oxygen derivatives of the heat insulation shell and the heat conducting core.
15. The semiconductor device of claim 9 , wherein the heat insulation shell comprises a superlattice structure.
16. A method for manufacturing a phase change memory structure, comprising:
forming a first metal layer;
forming a dielectric layer over the first metal layer, the dielectric layer patterned with a contact trench;
depositing a heat insulation layer having an effective first thermal conductivity in the contact trench;
filling the contact trench with a heat conductive material having a second thermal conductivity greater than the effective first thermal conductivity;
forming a phase change material over and in contact with the heat conductive material and the heat insulation layer; and
forming a second metal layer over the phase change material.
17. The method of claim 16 , wherein forming the first metal layer comprises forming a first metallization layer.
18. The method of claim 16 , further comprising forming an insulation layer derived from the heat insulation layer and the heat conductive material prior to forming the phase change material.
19. The method of claim 18 , wherein forming the insulation layer comprises performing an oxidation operation.
20. A method for manufacturing a phase change memory structure, comprising:
forming a first metal layer;
forming a dielectric layer over the first metal layer, the dielectric layer patterned with a contact trench;
depositing a heat insulation layer having an effective first thermal conductivity in the contact trench;
filling the contact trench with a heat conductive material having a second thermal conductivity greater than the effective first thermal conductivity;
forming a phase change material over and in contact with the heat conductive material and the heat insulation layer; and
forming a second metal layer over the phase change material,
wherein the depositing the heat insulation layer comprises forming a superlattice structure.