IP Library › Granted Patent US 11,128,029
Granted Patent B2
US 11,128,029 · App. 16/335,535 · Granted Sep 21, 2021

Die with embedded communication cavity

Inventors: Vijay K. Nair (Mesa, AZ); Digvijay Raorane (Chandler, AZ)
Assignee: Intel Corporation
H01Q1/2283H01L21/4857H01L23/13H01L23/5381H01L23/5383H01L23/5386H01L23/66H01L24/16H01L25/0655H01Q13/00H01L2223/6616H01L2223/6677H01L2224/16227H01L2224/16235H01L2224/16237
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Quick Facts
Patent No.
US 11,128,029
App. No.
16/335,535
Granted
Sep 21, 2021
Kind
B2
Abstract

Generally discussed herein are systems, devices, and methods that include a communication cavity. According to an example a device can include substrate with a first cavity formed therein, first and second antennas exposed in and enclosed by the cavity, and an interconnect structure formed in the substrate, the interconnect structure including alternating conductive material layers and inter-layer dielectric layers.

Claims (29)

1. A device comprising:

a substrate with low density interconnect routing therein;

a high density interconnect structure embedded in the substrate, the high density interconnect structure including high density interconnect routing therein and including a cavity formed therein;

a first antenna and a second antenna exposed in the cavity, the cavity coated with a conductive material to form a radio frequency shield for the first and second antennas; and

a first die and a second die, the first and second dies electrically connected to the low density interconnect routing and electrically connected to each other through the high density interconnect routing, the first die electrically connected to the first antenna and the second die electrically connected to the second antenna.

2. The device of claim 1 , wherein the first and second antennas are exposed to air in the cavity.

3. The device of claim 1 , wherein the cavity is situated above high density interconnects of the high density interconnect routing.

4. The device of claim 1 , wherein the cavity is situated alongside high density interconnects of the high density interconnect routing.

5. The device of claim 1 , wherein the cavity is situated alongside and below high density interconnects of the high density interconnect routing.

6. The device of claim 1 , wherein the high density interconnect structure further comprises a glass or silicon cover forming at least a portion of the cavity.

7. The device of claim 6 , wherein the cover is situated over the first and second antennas.

8. A device comprising:

a substrate with low density interconnect routing therein;

a high density interconnect structure embedded in the substrate, the high density interconnect structure including high density interconnect routing therein and including a cavity, formed therein;

a glass or silicon cover forming at least a portion of the cavity;

a first antenna and a second antenna exposed in the cavity; and

a first die and a second die, the first and second dies electrically connected to the low density interconnect routing and electrically connected to each other through the high density interconnect routing, the first die electrically connected to the first antenna and the second die electrically connected to the second antenna.

9. The device of claim 8 , wherein the first and second antennas are exposed to air in the cavity.

10. The device of claim 8 , wherein the cavity is coated with a conductive material to form a radio frequency shield for the first and second antennas.

11. The device of claim 8 , wherein the cover is situated over the first and second antennas.

12. A device comprising:

a substrate with low density interconnect routing therein;

a high density interconnect structure embedded in the substrate, the high density interconnect structure including high density interconnect routing therein and including a cavity, formed therein, the cavity situated above high density interconnects of the high density interconnect routing;

a first antenna and a second antenna exposed in the cavity; and

a first die and a second die, the first and second dies electrically connected to the low density interconnect routing and electrically connected to each other through the high density interconnect routing, the first die electrically connected to the first antenna and the second die electrically connected to the second antenna.

13. The device of claim 12 , wherein the first and second antennas are exposed to air in the cavity.

14. The device of claim 12 , wherein the cavity is coated with a conductive material to form a radio frequency shield for the first and second antennas.

15. The device of claim 12 , further comprising a glass or silicon cover forming at least a portion of the cavity.

16. The device of claim 15 , wherein the cover is situated over the first and second antennas.

Continuity (1)
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Cited By (1)
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