Apparatus and methods for measuring phase and amplitude of light through a layer
In one embodiment, disclosed are apparatus, methods, and targets for determining a phase shift of a photomask having a phase-shift target. An inspection or metrology system is used to direct an incident beam towards the target and then detect a plurality of intensity measurements that are transmitted through the target in response to the incident beam. A phase shift value for the target may then be determined based on the intensity measurements.
1. A method of determining a phase shift of a photomask having a phase-shift target, comprising
using an inspection or metrology system, directing an incident beam towards the target comprising a first portion formed from a phase-shifting layer deposited over a substrate and a second portion from which the phase shifting layer is removed, wherein the incident beam is directed towards each of the first and second portions of the target;
using the inspection or metrology system, measuring a plurality of first intensity values that are transmitted through each of the first and second portions of the target in response to the incident beam, wherein the first intensity values are measured at one or more detectors onto which a pupil plane of the inspection or metrology system is relayed;
determining and storing a phase shift value for the target based on the measurements of the first intensity values from each of the first and second portions of the target;
using the inspection or metrology system, measuring a plurality of second intensity values that are transmitted through the photomask in response to the incident beam, wherein the second intensity values are measured at the one or more detectors onto which a photomask plane is imaged; and
detecting defects based on the measurements of the second intensity values.
2. The method of claim 1 , wherein the first and second portions of the target each have a size for completely filling the illumination field of the incident beam when such incident beam is directed at each of the first and second portions.
3. The method of claim 2 , wherein the target further comprises a third portion comprised of one or more gratings etched in the phase-shifting layer and the first intensity values are further obtained for each imaged diffraction order.
4. The method of claim 3 , wherein the third portion comprises two or more gratings.
5. The method of claim 3 , wherein the one or more grating are formed from a plurality of lines etched from the phase-shifting layer.
6. The method of claim 3 , wherein the one or more grating are formed from a two dimensional array of holes or pillars etched from the phase-shifting layer.
7. The method of claim 1 , further comprising:
measuring a plurality of first reflected intensity values that are reflected from the target in response to the incident beam, wherein the phase shift value is further based on the first reflected intensity values; and
measuring a plurality of second reflected intensity values that are reflected from the photomask in response to the incident beam, wherein the operation of detecting defects is further based on the second reflected intensity values.
8. The method of claim 1 , wherein the first intensity values are obtained from a pupil image at the pupil plane using a Bertrand lens, which is inserted into a path of an output beam transmitted through the target in response to the incident beam during the operation of measuring the first intensity values and removed from the output beam during the operation of measuring the second intensity values.
9. The method of claim 8 , wherein the inspection or metrology system is a reticle inspection system.
10. The method of claim 9 , wherein the reticle inspection system comprises an objective from which the first intensity values are obtained from a pupil image at the pupil plane of the objective.
11. The method of claim 10 , wherein the objective is a reflective or refractive element.
12. The method of claim 1 , wherein the phase shift is determined by adjusting a plurality of parameters of a model for calculating intensity values until a difference between such calculated intensity values and the first intensity values is minimized, and then using the model to determine the phase shift based on final values for the model parameters.
13. A system for determining a phase shift of a photomask having a phase-shift target comprising a first portion formed from a phase-shifting layer deposited over a substrate and a second portion from which the phase shifting layer is removed, the system comprising:
illumination optics for directing an incident beam towards the photomask and each of the first and second portions of the target;
collection optics having one or more detectors for measuring a plurality of first intensity values that are transmitted through each of the first and second portions of the target and measuring a second plurality of intensity values that are transmitted through the photomask in response to the incident beam; and
a controller configured to:
determine and store a phase shift value for the target based on the first intensity values, wherein the first intensity values are measured at the one or more detectors onto which a pupil plane of the system is relayed, and
detect defects based on the measurements of the second intensity values, wherein the second intensity values are measured at the one or more detectors onto which a photomask plane is imaged.
14. The system of claim 13 , wherein the first and second portions of the target each have a size for completely filling the illumination field of the incident beam when such incident beam is directed at each of the first and second portions.
15. The system of claim 14 , wherein the target further comprises a third portion comprised of one or more gratings etched in the phase-shifting layer and the first intensity values are further obtained for each imaged diffraction order.
16. The system of claim 15 , wherein the third portion comprises two or more gratings.
17. The system of claim 15 , wherein the one or more grating are formed from a plurality of lines etched from the phase-shifting layer.
18. The system of claim 15 , wherein the one or more grating are formed from a two dimensional array of holes or pillars etched from the phase-shifting layer.
19. The system of claim 13 , wherein the controller is further configured for causing the following operations:
measuring a plurality of first reflected intensity values that are reflected from the target in response to the incident beam, wherein the phase shift value is further based on the reflected intensity values; and
measuring a plurality of second reflected intensity values that are reflected from the photomask in response to the incident beam, wherein the operation of detecting defects is further based on the second reflected intensity values.
20. The system of claim 13 , further comprising a Bertrand lens, wherein the first intensity values are obtained from a pupil image at the pupil plane using the Bertrand lens, which is inserted into a path of an output beam transmitted through the target in response to the incident beam during the operation of measuring the first intensity values and removed from the output beam during the operation of measuring the second intensity values.
21. The system of claim 20 , wherein the system is in the form of a reticle inspection system.
22. The system of claim 21 , further comprising an objective from which the first intensity values are obtained from a pupil image at the pupil plane of the objective.
23. The system of claim 22 , wherein the objective is a reflective or refractive element.
24. The system of claim 13 , wherein the phase shift is determined by adjusting a plurality of parameters of a model for calculating intensity values until a difference between such calculated intensity values and the first intensity values is minimized, and then using the model to determine the phase shift based on final values for the model parameters.