IP Library Granted Patent US 11,133,077
Granted Patent B2
US 11,133,077 · App. 16/857,124 · Granted Sep 28, 2021

Method of programming multi-plane memory device for accelerating program speed and reducing program disturbance

Inventors: Jialiang Deng (Wuhan, CN); Yu Wang (Wuhan, CN)
Assignee: Yangtze Memory Technologies Co., Ltd.
G11C16/3459G11C16/24G11C16/26
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Quick Facts
Patent No.
US 11,133,077
App. No.
16/857,124
Granted
Sep 28, 2021
Kind
B2
Abstract

A memory device includes a plurality of planes, a row driver and a controller. A method of programming the memory device includes in a program operation, the row driver applying a program pulse to a plurality of memory cells of a first plane of the plurality of planes; after the row driver applies the program pulse to the plurality of memory cells, the controller verifying if the plurality of memory cells have reached a predetermined program state; and if a preset number of the plurality of memory cells have failed to reach the predetermined program state after the plurality of memory cells have been verified for a predetermined number of times, the controller disabling the first plane.

Claims (22)

1. A method of programming a memory device, the memory device comprising a plurality of planes, a row driver and a controller, the method comprising:

in a program operation, the row driver applying a program pulse to a plurality of memory cells of a first plane of the plurality of planes;

after the row driver applies the program pulse to the plurality of memory cells, the controller verifying if the plurality of memory cells have reached a predetermined program state; and

if a preset number of the plurality of memory cells have failed to reach the predetermined program state after the plurality of memory cells have been verified for a predetermined number of times, the controller disabling the entire first plane.

2. The method of claim 1 , further comprising:

the controller incrementing a failed verification count when the preset number of the plurality of memory cells have not reached the predetermined program state.

3. The method of claim 1 , wherein predetermined numbers of times associated with failed verifications of the predetermined program state and another program state are identical.

4. The method of claim 1 , wherein predetermined numbers of times associated with failed verifications of the predetermined program state and another program state are different.

5. The method of claim 1 , wherein the controller disabling the first plane comprises:

the controller blocking a plane select signal.

6. The method of claim 1 , wherein the controller disabling the first plane comprises:

the controller blocking a blocks select signal.

7. The method of claim 1 , wherein the controller disabling the first plane comprises:

the controller deselecting all word lines of the first plane.

8. The method of claim 1 , wherein the controller disabling the first plane comprises:

the controller deselecting all bit lines of the first plane.

9. The method of claim 1 , wherein the controller disabling the first plane comprises:

the controller setting a fail bit count pass signal to continue to program the memory device.

10. The method of claim 1 , further comprising:

the controller setting the predetermined program state to a next program state when one of the plurality of planes has passed a verification of the predetermined program state and the predetermined program state is not a highest program state.

11. The method of claim 1 , further comprising:

the controller disabling the plurality of planes when one of the plurality of planes has passed verifications of the predetermined program state and the predetermined program state is a highest program state.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 23, 2020
From: DENG, JIALIANG; WANG, YU
To: YANGTZE MEMORY TECHNOLOGIES CO., LTD.
Reel/Frame 052482/0320 →
Continuity (2)
Continuation PCTCN2020075936 · Feb 20, 2020
Related Publication 20210264994A1 · Aug 26, 2021
Cited By (2)
US 12,347,501 US 12,387,794